Patent application number | Description | Published |
20080282971 | NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS - The apparatus has a crucible for storing a solution; an inner container | 11-20-2008 |
20090000538 | SINGLE CRYSTAL GROWING METHOD - In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material. | 01-01-2009 |
20090000542 | APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material. | 01-01-2009 |
20090078193 | PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR - A growth apparatus is used having a plurality of crucibles | 03-26-2009 |
20090293805 | Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal - It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium. | 12-03-2009 |
20110274609 | Group 3B nitride crystal substrate - A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less. | 11-10-2011 |
20120012984 | METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL - To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface. | 01-19-2012 |
20120111264 | METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL - A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface | 05-10-2012 |
20120175740 | BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME - Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing. | 07-12-2012 |
20130221490 | METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL - To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface. | 08-29-2013 |
20140014028 | Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same - A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate | 01-16-2014 |
20140026809 | Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same - A seed crystal substrate | 01-30-2014 |