Patent application number | Description | Published |
20130326515 | DEVICE, RECORDING MEDIUM, AND METHOD - A device includes a memory which stores a program, and a processor which executes, based on the program, a procedure comprising deciding, based on maximum bandwidth information included in bandwidth setting information corresponding to a network device existing on a route between a physical server serving as an allocation destination candidate of a virtual machine and a gateway, maximum bandwidth information of the virtual machine, available bandwidth information of the network device, and hardware resource information of the physical server, and instructing a decided physical server to create the virtual machine. | 12-05-2013 |
20140359114 | COMPUTER-READABLE RECORDING MEDIUM, USAGE MODE DATA GENERATION METHOD, AND USAGE MODE DATA GENERATION DEVICE - A computer-readable recording medium has stored therein a program for causing a computer to execute a usage mode data generation process. The process comprising (a) reading from a storage device association data associating each of a plurality of different expression formats of component data and a standardized expression format which can be converted to each of the plurality of different expression formats, and (b) based on the association data read at (a), generating according to the standardized expression format standardized usage mode data containing component data from first usage mode data that is usage mode data for a first virtual computer included in a plurality of virtual computers and that contains component data for the connector in a first relay device with the type of a first type expressed in a first expression format corresponding to the first relay device. | 12-04-2014 |
Patent application number | Description | Published |
20090148964 | METHOD FOR FORMING DIELECTRIC SiOCH FILM HAVING CHEMICAL STABILITY - A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher. | 06-11-2009 |
20120214318 | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen - A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule. | 08-23-2012 |
20130115763 | METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS - The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide. | 05-09-2013 |
20150017794 | METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS - The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide. | 01-15-2015 |
Patent application number | Description | Published |
20100233463 | Method for Forming Porous PTFE Layer, and Porous PTFE Layer and Molded Product That are Obtained by the Forming Method - A method forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 09-16-2010 |
20110139343 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
20110139350 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
20110139354 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
20110139355 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
20110139367 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |