Patent application number | Description | Published |
20080231667 | FERROELECTRIC FILM, PROCESS FOR PRODUCING THE SAME, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE - A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A | 09-25-2008 |
20090058953 | PROCESS FOR FORMING A FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: | 03-05-2009 |
20090058954 | PROCESS FOR FORMING A FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target according to the composition of the ferroelectric film, by a sputtering technique under conditions satisfying Formulas (1) and (2), or (3) and (4): | 03-05-2009 |
20090058955 | PROCESS FOR FORMING A FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A ferroelectric film containing a perovskite type oxide that is represented by Formula (P) is formed on a substrate by a sputtering technique under conditions satisfying Formulas (1) and (2), or Formulas (3) and (4): | 03-05-2009 |
20090062114 | PEROVSKITE TYPE OXIDE, FERROELECTRIC FILM, PROCESS FOR PRODUCING SAME, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A perovskite type oxide that is represented by Formula (P) shown below is provided: | 03-05-2009 |
20090114875 | PEROVSKITE OXIDE, FERROELECTRIC FILM AND FERROELECTRIC DEVICE CONTAINING THE PEROVSKITE OXIDE - A perovskite oxide having a composition expressed by a compositional formula, | 05-07-2009 |
20100079552 | PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A piezoelectric film of a perovskite oxide represented by a general expression (P) below and has a pyrochlore free single phase perovskite structure with a/b≦1.06. | 04-01-2010 |
20100123368 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 05-20-2010 |
20100194824 | PIEZOELECTRIC MATERIAL, METHOD FOR PRODUCING PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: | 08-05-2010 |
20100253749 | PIEZOELECTRIC MATERIAL, METHOD FOR PRODUCING PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: | 10-07-2010 |
20110121096 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS - A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. | 05-26-2011 |
20110316937 | PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS - A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: | 12-29-2011 |
20120193225 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 08-02-2012 |