Takaki, Kanagawa
Goro Takaki, Kanagawa JP
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20090235302 | Information processing apparatus, content reproduction apparatus, information providing apparatus, device control apparatus, cooperative processing system, and program - In a cooperative processing system for performing cooperative process between a portable terminal and a television terminal through a service server and a device control server, content and content information separately managed by a content server connected to the television terminal and the service server are searched based on a search condition extracted from the content or the content information reproduced and displayed by the portable terminal, and the search result of the content and the content information is seamlessly displayed on the television terminal. Consequently, the convenience of the user in content usage can be enhanced. | 09-17-2009 |
20110283234 | Contents Management System, Contents Management Method, and Computer Program - A contents management system manages multiple contents stored in a plurality of apparatuses. The contents management system includes a command input unit that assigns a viewing style for guiding a user to desired contents and a contents search condition; a screen format generating unit that generates a screen format according to the assigned viewing style; a contents search unit that searches a contents providing space constituted by the plurality of apparatuses, each storing contents, according to the assigned search condition; and a contents presenting unit that displays and outputs information on the individual contents searched by the contents search unit on the screen format through mapping. | 11-17-2011 |
Keishi Takaki, Kanagawa JP
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20140117410 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer. | 05-01-2014 |
20140284660 | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER - A method for manufacturing a semiconductor wafer includes the steps of forming, on a first principal surface of a substrate, a compound semiconductor layer different in kind from the substrate, and removing, by etching, a part of the compound semiconductor layer. The part of the compound semiconductor layer is formed on an outer peripheral portion of the first principal surface of the substrate. | 09-25-2014 |
Masato Takaki, Kanagawa JP
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20150031233 | Electric Connector - A connector terminal includes a front contact-point portion that wipes off foreign material by slidingly contacting a plug terminal and a rear contact-point portion that is conductively connected with the plug terminal. The front contact-point portion has a sliding edge that slidingly contacts the plug terminal. The rear contact-point portion includes a contact edge that is thinner than the sliding edge, has a sliding width that is less than that of the sliding edge, and is conductively connected with the plug terminal by passing a sliding path of the sliding edge. Therefore, it becomes less likely for the contact edge to contact foreign material adhered to a portion other than portions at the sliding path. Thus, conduction failure can be prevented. In addition, by providing the connector terminal, it is possible to provide a socket that can similarly prevent conduction failure caused by foreign material. | 01-29-2015 |
20150044915 | Connector and Terminal - A terminal of a connector includes two contact points, that is, a front contact point and a rear contact point. An angle formed by a line extending from an upper end of a rear terminal portion to the rear contact point and a direction in which the connector is inserted and removed is smaller than an angle formed by a line extending from an upper end of a front terminal portion to the front contact point and the direction in which the connector is inserted and removed. Thus, the insertion force used to insert the rear contact point can be reduced. | 02-12-2015 |
20150044917 | Connector Terminal and Electric Connector - A socket terminal includes front and rear terminals. The front terminal includes a front contact-point portion that wipes off foreign material adhered to a terminal surface of a plug terminal. The rear terminal includes a rear contact-point portion that contacts the terminal surface wiped by the front contact-point portion. The socket terminal also includes a movable portion between a circuit-board connection portion and circuit board. The movable portion cancels a reduction in impedance of at least the front terminal and rear terminal for a transmission signal flowing from the circuit-board connection portion connected to the circuit board. This can provide a socket terminal allowing the rear contact-point portion to contact the terminal surface from which foreign material has been wiped off, and allowing impedance mismatching at a terminal transmission path to be eliminated; and to provide an electric connector including the socket terminal. | 02-12-2015 |
20150056830 | Electrical Connector - An electrical connector includes a terminal that includes a front terminal portion, and a rear terminal portion the contact position of which is located further from the insertion opening of the connector than the contact position of the front terminal portion, and that is electrically connected with a mating terminal as an object to be connected. The front terminal portion has a front elastic arm, and a front contact portion formed at the distal end of the front elastic arm, and the front contact portion has a front contact that comes into contact with the mating terminal, and a dummy contact that is located closer to the insertion opening of the connector than the front contact, and that wipes a foreign substance adhering to the mating terminal. | 02-26-2015 |
Naoya Takaki, Kanagawa JP
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20080313586 | Resistance net generating apparatus for circuit simulation - In an aspect of the present invention, a resistance net generating apparatus includes a dividing section configured to acquire a data of a wiring pattern which contains connection position with vias and to divide the wiring pattern into rectangular patterns; a division pattern processing section configured to set nodes and resistances base on the rectangular patterns; and an output section configured to output positions of the nodes and the resistances as a resistance net specifying data. The wiring pattern is represented by sidelines extending into an X direction and a Y direction orthogonal to the X direction. The dividing section divides the wiring pattern into the rectangular patterns by extension lines extending from the sidelines into an inside of the wiring pattern. | 12-18-2008 |
Ryohei Takaki, Kanagawa JP
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20100229794 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown. | 09-16-2010 |
20100307418 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio. | 12-09-2010 |
20110180001 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR | 07-28-2011 |
Seje Takaki, Kanagawa JP
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20120107970 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device is provided to improve the reliability of electrical coupling of the semiconductor device. The manufacturing method includes the steps of (a) laminating a main conductive film (base film) and a stopper insulating film (film to be measured) above the main conductive film, over a main surface of a semiconductor substrate, (b) forming an opening in the stopper film, (c) applying an electron beam (excitation beam) to the opening to emit characteristic X-rays, and (d) detecting the characteristic X-rays to determine the presence or absence, or thickness of the stopper insulating film at the bottom of the opening based on detection result of the characteristic X-rays. In the step (d), the presence or absence, or thickness of the stopper film is determined by a ratio of element components contained in the characteristic X-rays. | 05-03-2012 |
Shigeaki Takaki, Kanagawa JP
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20120011490 | DEVELOPMENT SYSTEM - According to one embodiment, a development system includes an instruction set simulator (ISS) and a checker. The ISS includes a central processing unit (CPU) model that simulates an execution program and a memory model as a work area of the processor model. The checker monitors execution of an access instruction, included in the execution program, on the memory model and, when a difference between a data length at the time of writing and a data length at the time of reading on the same spot is detected, notifies an execution spot at the time of detection as an endian dependent spot. | 01-12-2012 |
Shinji Takaki, Kanagawa JP
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20150024623 | ADAPTER DEVICE AND ELECTRONIC APPARATUS - An adapter device includes a cover that covers an inserted recording medium, a cover urging portion that urges the cover in a direction of the recording medium and causes the cover to be in press contact with the recording medium, and a connector conversion section that connects a terminal portion of the recording medium to a connector on an apparatus side having a different physical specification. | 01-22-2015 |
Suguru Takaki, Kanagawa JP
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20100120815 | STABLE SOLID PREPARATION CONTAINING 4,5-EPOXYMORPHINAN DERIVATIVE - It is an object of the present invention to provide a stable solid preparation comprising a 4,5-epoxymorphinan derivative or a pharmacologically acceptable acid addition salt thereof as an effective ingredient. | 05-13-2010 |
Takamasa Takaki, Kanagawa JP
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20100261121 | PATTERN FORMING METHOD - To provide a pattern forming method comprising: laminating a resist layer on a substrate; forming a diffraction pattern having an opening opened at a predetermined pitch p for diffracting exposure light on an upper layer side of the resist layer; performing whole image exposure with respect to the diffraction pattern in which a refractive index with respect to the exposure light is n, with diffracted light acquired by irradiation of exposure light having a wavelength λ from above the diffraction pattern, which is then diffracted by the diffraction pattern; and forming a desired pattern on a lower layer side of the resist pattern by using a resist pattern formed by developing the resist layer, wherein the predetermined pitch p, the wavelength λ, and the refractive index n satisfy a condition of p>λ/n. | 10-14-2010 |
20100304279 | MANUFACTURING METHOD OF PHASE SHIFT MASK, CREATING METHOD OF MASK DATA OF PHASE SHIFT MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range. | 12-02-2010 |
20110122390 | EXPOSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND EXPOSURE APPARATUS - According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the resist layer. | 05-26-2011 |
Tetsuya Takaki, Kanagawa JP
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20130235777 | PORTABLE TERMINAL AND COMMUNICATION CONTROL METHOD - A mobile terminal according to the present invention includes data analyzer ( | 09-12-2013 |
Toshimasa Takaki, Kanagawa JP
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20090249038 | STREAM DATA PROCESSING APPARATUS - In a normal operation state, a connection management section writes data transmitted from a first processing section to a data temporary storage section and reads data to be received by a second processing section from the data temporary storage section. Upon receiving control signals which instruct a change of the subject of processing, the first processing section and the second processing section output a transmitting-end clear request and a receiving-end clear request, respectively. The connection management section reads data from the empty data storage section after a transmitting-end clear request is received and until a receiving-end clear request is received, and writes data to the empty data storage section after a receiving-end clear request is received and until a transmitting-end clear request is received. | 10-01-2009 |