Takahiro Naito
Takahiro Naito, Duesseldorf DE
Patent application number | Description | Published |
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20090189256 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate. | 07-30-2009 |
20090309218 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled. | 12-17-2009 |
20100155940 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode. | 06-24-2010 |
20120091583 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode. | 04-19-2012 |
20150255374 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate. | 09-10-2015 |
Takahiro Naito, Kodaira JP
Patent application number | Description | Published |
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20090189268 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Of three chips ( | 07-30-2009 |
20100015760 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 01-21-2010 |
20110171780 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 07-14-2011 |
20120264240 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 10-18-2012 |
20130320571 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 12-05-2013 |
20140117541 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 05-01-2014 |
20150108639 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Of three chips ( | 04-23-2015 |
Takahiro Naito, Kokubunji JP
Patent application number | Description | Published |
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20090014843 | MANUFACTURING PROCESS AND STRUCTURE OF THROUGH SILICON VIA - A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions. | 01-15-2009 |
20110233773 | MANUFACTURING PROCESS AND STRUCTURE OF THROUGH SILICON VIA - A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions. | 09-29-2011 |
Takahiro Naito, Daito-Shi JP
Patent application number | Description | Published |
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20080199238 | Image Generating Apparatus - An image generating apparatus includes a print portion printing a paper, a platen roller arranged so as to be opposed to the print portion, a heat radiating member mounted on the print portion, radiating heat generated in the print portion, integrally provided with a plate-like support shaft as an axis of rotation and rotatable in a direction for coming into pressure contact with or separating from the platen roller, a regulating member regulating movement of the print portion in a printing direction of the paper, a chassis having a hole-shaped bearing receiving the plate-like support shaft, and a side plate mounted on the chassis. | 08-21-2008 |
20080315500 | Paper Feed Mechanism and Image Generating Apparatus - This paper feed mechanism includes a paper feed cassette integrally having a paper contact portion on a position deviating from the center of a rear-side inner wall surface in the cross direction by a prescribed distance in the cross direction and an apparatus body mountable with the paper feed cassette, and the apparatus body includes a driving portion rotating a paper feed roller in a paper feed direction and a paper discharge direction and a control portion bringing the rear end of the paper into contact with the paper contact portion for generating torque for the paper and thereafter transporting the paper to the apparatus body in paper feeding. | 12-25-2008 |
Takahiro Naito, Tokyo JP
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20080248611 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The quality and reliability of a semiconductor device can be improved by eliminating a warp of a chip and performing a chip-stack. A wiring substrate, the first semiconductor chip connected via the first gold bump on the wiring substrate, the second semiconductor chip stacked via the second gold bump on the first semiconductor chip, and a sealing body are comprised. A first gold bump is connected to the wiring substrate, heating, and injection by pressure welding of the first gold bump is done under normal temperature after that at the hole-like electrode of the first semiconductor chip. Since injection by pressure welding of the second gold bump of the second semiconductor chip is done under normal temperature into the hole-like electrode of the first semiconductor chip and the second semiconductor chip is stacked, the chip-stack can be performed under normal temperature. The chip after the second stage can be stacked in the state where there is no warp in the first stage chip, by this, and the quality and reliability of the semiconductor device (semiconductor package) can be improved. | 10-09-2008 |
20110285313 | Light-emitting element driving device and display device - A light-emitting element driving device includes: a plurality of light emitters; a power supply; a plurality of current control transistors; a plurality of constant-current circuits; a voltage selecting circuit; a control circuit; and a voltage controller. | 11-24-2011 |
20110285685 | Light emitting element driver and display device - Disclosed herein is a light-emitting element driver including: a light-emitting section; a power supply section; a switching section; a constant current circuit or resistor; and a control circuit. | 11-24-2011 |
Takahiro Naito, Kanagawa JP
Patent application number | Description | Published |
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20120108055 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate. | 05-03-2012 |
Takahiro Naito, Anjo-Shi JP
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20120136553 | CONTROL APPARATUS FOR AUTOMATIC STOP OF ENGINE - A control apparatus controls an automatic stop of an engine mounted on a vehicle so as to automatically stop the engine if a predetermined stop condition is satisfied, the stop condition including a condition that a running speed of the vehicle is a prescribed speed or less. The control apparatus includes a prediction unit and a prohibition unit. The prediction unit predicts whether or not the next automatic stop time of the engine is less than a prescribed time capable of obtaining a fuel saving benefit based on a history of a vehicle stop time or an automatic stop time of the engine. The prohibition unit prohibits the next automatic stop of the engine if the prediction unit predicts that the next automatic stop time of the engine is less than the prescribed time. | 05-31-2012 |
Takahiro Naito, Anjo-City JP
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20140300478 | AWARENESS LEVEL IMPROVEMENT DEVICE - An awareness level improvement device has an input portion, a determination portion, and a controller. Data related to the awareness level of the driver is input into the input portion. The determination portion determines whether the driver is in a absentminded state based on the data input into the input portion. The controller controls an execution portion to execute an application improving the awareness level of the driver when the determination portion determines that the driver is driving in the absentminded state. The application includes a body motion application that prompts the driver to perform a body motion. | 10-09-2014 |
Takahiro Naito, Nukata-Gun JP
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20150294547 | DRIVER CONDITION DETECTION APPARATUS, DRIVING ASSISTANCE APPARATUS, DRIVER CONDITION DETECTION METHOD, AND DRIVING ASSISTANCE METHOD - A driver condition detection apparatus, which detects a condition of a driver during a driving of a vehicle, includes a position detection unit detecting a present position of the vehicle, a position determination unit determining whether the present position of the vehicle is equal to a detection target position that is preliminarily set, a driving behavior detection unit detecting a driving behavior of the driver or a driving behavior of the vehicle when the present position of the vehicle is equal to the detection target position, and a condition detection unit detecting a condition of the driver based on the driving behavior. | 10-15-2015 |