Takahiro Kamo
Takahiro Kamo, Shibuya JP
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20090230397 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked. | 09-17-2009 |
20100109014 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer. | 05-06-2010 |
20100230675 | DISPLAY DEVICE - A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side. | 09-16-2010 |
Takahiro Kamo, Kashima-Shi JP
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20100226813 | HIGH TENSILE STRENGTH STEEL AND MARINE STRUCTURE HAVING EXCELLENT WELD TOUGHNESS - In order to provide a high tensile strength steel having excellent low temperature toughness and which can withstand large heat input welding, a steel comprises, in mass percent, C: 0.01-0.10%, Si: at most 0.5%, Mn: 0.8-1.8%, P: at most 0.020%, S: at most 0.01%, Cu: 0.8-1.5%, Ni: 0.2-1.5%, Al: 0.001-0.05%, N: 0.0030-0.0080%, O: 0.0005-0.0035%, if necessary at least one of Ti: 0.005-0.03%, Nb: 0.003-0.03%, and Mo: 0.1-0.8%, and a remainder of Fe and impurities, and the N/Al ratio is 0.3-3.0. | 09-09-2010 |
Takahiro Kamo, Tokyo JP
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20080227274 | MANUFACTURING METHOD OF DISPLAY DEVICE - In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured. The energy distribution of the linear-shaped laser beam is determined by a detector type CCD camera which is moved stepwise in the directions in which its long axis and short axis extend, respectively, and a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signal in the direction parallel to the short axis by the square root of the width W of the short axis of the above linear-shaped laser beam in each position of the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam to evaluate the above intensity distribution. | 09-18-2008 |
20090261329 | DISPLAY DEVICE - Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×10 | 10-22-2009 |
Takahiro Kamo, Mobara JP
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20090061575 | Display device and fabrication method thereof - The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO | 03-05-2009 |
Takahiro Kamo, Osaka-Shi JP
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20090022619 | Steel plate for submerged arc welding - A steel plate for submerged arc welding having good low temperature toughness at a fusion line vicinity part and a boundary with the base material in HAZ as well as at the base material and the weld metal is provided. The steel plate for submerged arc welding according to the invention contains, by mass, 0.03% to 0.09% C, 1.5% to 2.5% Mn, 0.005% to 0.025% Nb, 0.005% to 0.02% Ti, 0.01% to 0.06% Al, at most 0.0005% B, 0.001% to 0.008% N, at most 0.015% P, at most 0.015% S, and at most 0.006% O, and the balance consists of Fe and impurities. Therefore, the steel plate according to the present invention has good low temperature toughness not only at the fusion line vicinity part and the boundary with a base material in the HAZ but also in the base material and weld metal. | 01-22-2009 |
Takahiro Kamo, Chiba JP
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20080296583 | Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode. | 12-04-2008 |