Patent application number | Description | Published |
20090026072 | AL-NI-LA-SI SYSTEM AL-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si. | 01-29-2009 |
20090242394 | AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more. | 10-01-2009 |
20090242395 | Al-Ni-La-Cu alloy sputtering target and manufacturing method thereof - The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000. | 10-01-2009 |
20100065425 | SILVER ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - A silver alloy sputtering target is provided which is useful in forming a thin silver-alloy film of a uniform thickness by the sputtering method. When crystal orientation strengths are determined at four arbitrary positions by the X-ray diffraction method, the orientation which exhibits the highest crystal orientation strength (X | 03-18-2010 |
Patent application number | Description | Published |
20080196796 | Zn-Al Alloy Having Excellent High-Speed Deformation Properties and Process For Producing the Same - A Zn—Al alloy excellent in static deformability as well as dynamic deformability and applicable to large-sized structures, and a method for production thereof. The alloy contains 30-99% Zn, with the remainder being Al and inevitable impurities, and has a metallographic structure in which the α phase or α′ phase having an average grain size no larger than 5 μm contains the β phase finely dispersed therein, the Al inclusions have a maximum equivalent circle diameter no larger than 50 μm and are free of pores no smaller than 0.5 mm in terms of equivalent circle diameter, and the macrosegregation of Al is less than 3.0% and the microsegregation of Al is less than 2.0%. (% means mass %.) | 08-21-2008 |
20090041616 | AI BASE ALLOY EXCELLENT IN HEAT RESISTANCE, WORKABILITY AND RIGIDITY - Disclosed is a lightweight aluminum based alloy that is high in strength and elongation properties at high temperatures of around 200° C. to 300° C. and has excellent workability in hot working. Disclosed also is a heat-resistant aluminum based alloy excellent in wear resistance and rigidity. Specifically, an aluminum based alloy contains, in terms of percent by mass, 5% to 10% of Mn; 0.5% to 5% of V; 0.5% to 5% of Cr; 0.5% to 5% of Fe; 1% to 8% of Si; 0.5% to 5% of Ni, with the balance being aluminum and inevitable impurities. The aluminum based alloy has a structure including 35 to 80 percent by volume of an intermetallic compound phase with the balance being an aluminum metal matrix. | 02-12-2009 |
20110017367 | MAGNESIUM ALLOY AND PROCESS FOR PRODUCING THE SAME - A magnesium alloy having excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures. Also provided is a process for producing the alloy. In producing the magnesium alloy, a magnesium alloy containing yttrium and samarium in respective specific amounts is cast and the resultant cast is subjected to a solution heat treatment, subsequently hot working, and then an aging treatment, thereby reducing the average crystal grain diameter of the structure. In addition, the amounts of the yttrium and samarium in solution in the magnesium matrix are balanced with the number of precipitate particles of a specific size in the crystal grains. The magnesium alloy thus obtained has excellent strength and elongation at high temperatures and further having excellent creep characteristics at high temperatures. | 01-27-2011 |
20110198602 | ALUMINUM ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET - Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film. | 08-18-2011 |
Patent application number | Description | Published |
20090278518 | VOLTAGE REGULATOR - A voltage regulator is disclosed that includes first and second output transistors each outputting a current from the input terminal to the output terminal of the voltage regulator; and a control circuit part controlling the operations of the first and second output transistors to equalize a voltage proportional to an output voltage with a reference voltage. The control circuit part includes first and second error amplifier circuits each amplifying and outputting the difference between the proportional and reference voltages. The second error amplifier circuit consumes a smaller amount of current than the first error amplifier circuit. The control circuit part controls the output voltage by controlling the operations of the first and second output transistors using the first error amplifier circuit or controlling the operation of the second output transistor using the second error amplifier circuit in accordance with a control signal externally input to the control circuit part. | 11-12-2009 |
20100156367 | CONSTANT VOLTAGE CIRCUIT AND METHOD OF CONTROLLING OUPUT VOLTAGE OF CONSTANT VOLTAGE CIRCUIT - A constant voltage circuit for converting an input voltage input from an input terminal, converting the input voltage to a predetermined constant voltage, and outputting the converted voltage from an output terminal is disclosed that includes an output transistor for outputting a current corresponding to a control signal from the input terminal to the output terminal, a control circuit part for controlling operation of the output transistor so that a proportional voltage proportional to the voltage output from the output terminal is equal to a reference voltage, and a pseudo-load current control circuit part for supplying a pseudo-load current from the output terminal when detecting that the output transistor is switched off according to a voltage difference between the input voltage and a voltage of a gate of the output transistor. | 06-24-2010 |
20140070779 | SWITCHING REGULATOR - A switching regulator includes a coil, switching transistor, a synchronous rectifying transistor, a switching control circuit, a comparator, a first buffer circuit operated by an input voltage, and a second buffer circuit operated by an output voltage. The switching control circuit assumes control such that control signals are outputted from the first buffer circuit to a switching transistor and a synchronous rectifying transistor, respectively, in response to a power supply switching signal indicating that the output voltage is lower than the input voltage, while the switching control circuit assumes control such that the control signals are outputted from the second buffer circuit to the switching transistor and the synchronous rectifying transistor, respectively, in response to the power supply switching signal indicating that the output voltage is equal to or higher than the input voltage. | 03-13-2014 |