| Patent application number | Description | Published |
|---|
| 20080303074 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device is equipped with a plug conductive layer formed in an interlayer dielectric film on a substrate, and a conductive member provided on the plug conductive layer. The semiconductor device further includes a spacer dielectric film formed on the interlayer dielectric film and having a hole section connecting to the plug conductive layer; and a spacer conductive section embedded in the hole section of the spacer dielectric film, connected to the plug conductive layer and connected to the conducive member, wherein the spacer conductive section is formed from a conductive material having self-orientation characteristic, and a top surface of the spacer dielectric film and a top surface of the spacer conductive section are planarized. | 12-11-2008 |
| 20090068763 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A method for manufacturing a semiconductor device includes the steps of: forming a ferroelectric capacitor having a first electrode, a ferroelectric film and a second electrode successively laminated on a base substrate; forming a first interlayer dielectric film that covers the ferroelectric capacitor and the base substrate; forming a material film for a second interlayer dielectric film covering the first interlayer dielectric film; exposing the first interlayer dielectric film located on the ferroelectric capacitor by polishing an upper surface side of the material film for the second interlayer dielectric film by a CMP method; forming a contact hole that penetrates the first interlayer dielectric film and exposes the second electrode, after the step of exposing the first interlayer dielectric film; and forming in the contact hole a plug conductive section that conductively connects to the second electrode, wherein the first interlayer dielectric film has a lower polishing rate in the CMP method compared to the second interlayer dielectric film. | 03-12-2009 |
| 20090072286 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device includes: a ferroelectric capacitor that is provided above a base substrate and includes a first electrode, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a stopper film that covers a top surface of the second electrode of the ferroelectric capacitor; a hydrogen barrier film that covers a top surface and a side surface of the stopper film and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the hydrogen barrier film and the base substrate; a contact hole that penetrates the interlayer dielectric film, the hydrogen barrier film and the stopper film and exposes the second electrode; a barrier metal that covers the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the stopper film is formed from a dielectric material having a smaller etching rate than an etching rate of the interlayer dielectric film. | 03-19-2009 |
| 20090072287 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device includes: a ferroelectric capacitor including a first electrode provided above a substrate, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a hydrogen barrier film that covers a top surface and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the ferroelectric capacitor and the substrate; a contact hole that penetrates the interlayer dielectric film and the hydrogen barrier film and exposes the second electrode; a barrier metal that covers a top surface of the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the inner wall surface of the contact hole at the hydrogen barrier film includes a concave curved surface facing the interior of the contact hole, and the contact hole at the hydrogen barrier film has an inner diameter that gradually becomes smaller toward the second electrode. | 03-19-2009 |
| 20090127604 | FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A ferroelectric memory device includes: a substrate; a ferroelectric capacitor forming above the substrate, and having a lower electrode layer, a ferroelectric layer and an upper electrode layer; a first hydrogen barrier layer that covers the ferroelectric capacitor; an interlayer dielectric layer formed above the first hydrogen barrier layer; and a contact section that penetrates the interlayer dielectric layer and the first hydrogen barrier layer and connects to the upper electrode layer, wherein the contact section includes a first barrier layer in contact with the upper electrode layer, a second hydrogen barrier layer formed above the first barrier layer and a plug layer formed above the second hydrogen barrier layer. | 05-21-2009 |
| 20090137065 | METHOD FOR MANUFACTURING MEMORY DEVICE - A method for manufacturing a memory device including a ferroelectric memory array region and a logic circuit region is provided. The method includes the steps of: forming, above a base substrate, a plurality of ferroelectric capacitors in the ferroelectric memory array region; forming a wiring layer above the base substrate in the logic circuit region; forming an interlayer dielectric layer that covers the ferroelectric capacitors and the wiring layer; etching the interlayer dielectric layer formed at least in the ferroelectric memory array region to form a concave section; polishing the interlayer dielectric layer by a CMP (chemical mechanical polishing) method; etching the interlayer dielectric layer above the ferroelectric capacitors and the wiring layer to form contact holes; and forming contact sections in the contact holes. | 05-28-2009 |
| 20110180713 | THERMAL DETECTOR, THERMAL DETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL DETECTOR - The thermal detector includes a support member supported on a substrate. The support member has a mounting portion supporting a thermal detector element, and at least one arm portion connected at one end to the mounting portion and connected at the other end to the substrate. At least one of the mounting portion and the at least one arm portion has a first member disposed towards the substrate, a transverse width of a transverse cross-sectional shape of the first member set to a first width; a second member disposed toward the thermal detector element and facing the first member, a transverse width of the second member set to the first width; and a third member linking the first member and the second member, a transverse width of the third member set to a second width that is smaller than the first width. | 07-28-2011 |
| 20110182320 | THERMAL DETECTOR, THERMAL DETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL DETECTOR - The thermal detector includes a substrate, a thermal detector element including a light absorbing film, a support member supporting the thermal detector element and supported on the substrate so that a cavity is present between the member and the substrate, and at least one auxiliary support post of convex shape protruding from either the substrate or the support member towards the other. The height of the at least one auxiliary support post is shorter than the maximum height from the substrate to the support member. | 07-28-2011 |
