| Patent application number | Description | Published |
|---|
| 20080241587 | Film-Forming Apparatus And Film-Forming Method - For increasing the film-forming rate and enabling uniform film formation and waste elimination of raw material, a film-forming method and a film-forming apparatus can reach an evaporated film-forming material to a surface of a substrate by the flow of a transport gas so as to control the film-forming conditions by the flow of the gas. Thereby a uniform thin film can be deposited on the large-area substrate. That is, by directing the evaporated raw material toward the substrate, it is possible to increase the film-forming rate and achieve uniform film formation. | 10-02-2008 |
| 20080318431 | Shower Plate and Plasma Treatment Apparatus Using Shower Plate - A shower plate for plasma processing, which is formed by a plurality of pipes. A pipe includes a porous material member disposed along the pipe, which has a predetermined porosity with respect to a material gas, and which has an outwardly convex shape, and a metal member faced to the porous material member and that forms a material gas flow path in combination with the porous material member. A nozzle structure capable of releasing the material gas with a spread can be realized. | 12-25-2008 |
| 20090041929 | Film Forming Apparatus and Film Forming Method - In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel. | 02-12-2009 |
| 20090087545 | Film Forming Apparatus, Evaporating Jig, and Measurement Method - Provided are an evaporating jig by which a thin film, especially an organic EL film, can be uniformly formed over a long time, and a film forming apparatus including the evaporating jig. The evaporating jig is provided with an evaporating pan, having a bottom plane and side planes arranged to stand from the bottom plane, for defining a material containing space opened inside the side planes; and partitioning plates for partitioning the material containing space into a plurality of partial spaces. The partitioning plates are provided with locking pieces having a height which permits the partial spaces to be continuous on a bottom plane side of the evaporating pan. | 04-02-2009 |
| 20090107521 | CHEMICAL SOLUTION OR PURE WATER FEEDER, SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING APPARATUS, OR SUBSTRATE PROCESSING METHOD - By adding a perfluoromonomer to PVDF being a fluororesin to soften it, the oxygen permeability can be significantly reduced and a flexible fluororesin tube can be obtained. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer. The tube is used between a chemical solution or ultrapure water feeder and a chemical solution or ultrapure water utilizing apparatus such as a cleaning apparatus or a wet etching apparatus. | 04-30-2009 |
| 20090135109 | ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHODS OF MANUFACTURING THE SAME - In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB | 05-28-2009 |
| 20090218044 | MICROWAVE PLASMA PROCESSING APPARATUS, DIELECTRIC WINDOW FOR USE IN THE MICROWAVE PLASMA PROCESSING APPARATUS, AND METHOD FOR MANUFACTURING THE DIELECTRIC WINDOW - A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO | 09-03-2009 |
| 20090277379 | Film coating apparatus - A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface. | 11-12-2009 |
| 20100025856 | FABRICATION METHOD OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film. | 02-04-2010 |
| 20100059368 | MAGNETRON SPUTTERING APPARATUS - Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet. | 03-11-2010 |
| 20100101834 | INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM - An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable. | 04-29-2010 |
| 20100101945 | MAGNETRON SPUTTERING APPARATUS - In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. | 04-29-2010 |
| 20100117204 | FILM FORMING METHOD FOR A SEMICONDUCTOR - The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask. | 05-13-2010 |
| 20100126852 | ROTARY MAGNET SPUTTERING APPARATUS - In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target. | 05-27-2010 |
| 20100216300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×10 | 08-26-2010 |
| 20100244204 | FILM FORMING METHOD, FILM FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE - Provided is a technology capable of obtaining a fluorine-containing carbon film having a good leakage property, coefficient of thermal expansion and mechanical strength. The fluorine-containing carbon film is formed by using active species obtained by activating a C | 09-30-2010 |
| 20100264117 | PLASMA PROCESSING SYSTEM AND PLASMA PROCESSING METHOD - A plasma processing system includes a plasma processing device for forming or etching the plurality of films and a gas source for supplying all gases required for forming or etching the plurality of films. Furthermore, gases required for forming or etching each of the plurality of films are selectively supplied from the gas source to the plasma processing device via gas pipes by a control device. Therefore, a plurality of films of different compositions may be formed or etched within a single plasma processing device. | 10-21-2010 |
| 20100279512 | PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA-PROCESSING SEMICONDUCTOR SUBSTRATE - A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region. | 11-04-2010 |
| 20110000783 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate | 01-06-2011 |
| 20110053375 | METHOD FOR PROCESSING AMORPHOUS CARBON FILM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE METHOD - A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film. | 03-03-2011 |
| 20110074013 | FILM FORMING METHOD OF SILICON OXIDE FILM, SILICON OXIDE FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber ( | 03-31-2011 |
| 20110127075 | INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME - An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH | 06-02-2011 |
