Patent application number | Description | Published |
20100301481 | JOINT STRUCTURE AND ELECTRONIC COMPONENT - A joint structure joins an electronic element | 12-02-2010 |
20110042817 | SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME | 02-24-2011 |
20110108996 | JOINT STRUCTURE, JOINING MATERIAL AND METHOD FOR PRODUCING JOINING MATERIAL - The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint. | 05-12-2011 |
20110120769 | SOLDERING MATERIAL AND ELECTRONIC COMPONENT ASSEMBLY - A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop. | 05-26-2011 |
20110175224 | BONDED STRUCTURE AND MANUFACTURING METHOD FOR BONDED STRUCTURE - A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material. | 07-21-2011 |
20120018890 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion. | 01-26-2012 |
20120153461 | SEMICONDUCTOR COMPONENT, SEMICONDUCTOR WAFER COMPONENT, MANUFACTURING METHOD OF SEMICONDUCTOR COMPONENT, AND MANUFACTURING METHOD OF JOINING STRUCTURE - A semiconductor component of the present invention includes a semiconductor element and a joining layer formed on one surface of the semiconductor element and consisting of a joining material containing Bi as an essential ingredient, and projecting sections are formed on a surface of the joining layer on a side opposite to a surface in contact with the semiconductor element. By joining the semiconductor component to an electrode arranged so as to face the joining layer, the generation of a void can be suppressed. | 06-21-2012 |
20130241069 | SEMICONDUCTOR BONDING STRUCTURE BODY AND MANUFACTURING METHOD OF SEMICONDUCTOR BONDING STRUCTURE BODY - A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer. | 09-19-2013 |
20140048942 | MOUNTED STRUCTURE - A mounted structure includes an electrode of a substrate, an electrode of a semiconductor element, and a mounted layers for bonding the electrode of the substrate and the electrode of the semiconductor element, and the mounted layers includes: a first intermetallic compound layer containing a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer containing a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer containing a CuSn-based intermetallic compound, and the above layers are sequentially arranged from the electrode of the substrate toward the electrode of the semiconductor element to configure the mounted layers. | 02-20-2014 |
20140103531 | BONDED STRUCTURE - A bonded structure | 04-17-2014 |