Patent application number | Description | Published |
20090168504 | Phase change memory apparatus having an improved cycling endurance and programing method therefor - A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation. | 07-02-2009 |
20090245079 | OPTICAL RECORDING MEDIUM HAVING SUPER-RESOLUTION STRUCTURE FOR IMPROVEMENT OF REPRODUCING STABILITY AND NOISE CHARACTERISTIC IN LOW FREQUENCY BAND - A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron. | 10-01-2009 |
20090324824 | METHOD FOR GROWING THIN FILM - Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture. | 12-31-2009 |
20100128273 | HIGH RESOLUTION SURFACE PLASMON RESONANCE SENSOR AND SENSOR SYSTEM THEREOF - Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed. | 05-27-2010 |
20120105857 | HIGH SENSITIVITY LOCALIZED SURFACE PLASMON RESONANCE SENSOR AND SENSOR SYSTEM USING SAME - The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal. | 05-03-2012 |
20130120752 | FIBER-OPTIC SURFACE PLASMON RESONANCE SENSOR AND SENSING METHOD USING THE SAME - A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer. | 05-16-2013 |
20130168789 | LOCALIZED SURFACE PLASMON RESONANCE SENSOR USING CHALCOGENIDE MATERIALS AND METHOD FOR MANUFACTURING THE SAME - A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film. | 07-04-2013 |
20150116856 | PLASMONIC NANO-COLOR COATING LAYER AND METHOD FOR FABRICATING THE SAME - A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers. | 04-30-2015 |