Patent application number | Description | Published |
20080283865 | III-Nitride Compound Semiconductor Light Emitting Device - The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer. | 11-20-2008 |
20090014751 | III-Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same - Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other. | 01-15-2009 |
20090128492 | Keyboard and Method of Selecting Colors of Keys of the Keyboard - The present invention discloses a keyboard comprising light emitting devices, each respectively disposed below a key to lighten the top surface of the key; and a micro controller unit transmitting signals generated by each key to the computer, having switches for controlling the light emitting devices, and controlling switches according to signals transmitted from the computer, and a method of selecting the colors of the keys of the same. | 05-21-2009 |
20090197397 | Method of Manufacturing Semiconductor Device - The present invention discloses a method of manufacturing a semiconductor device including a plurality of semiconductor layers grown on a substrate and removing the substrate from the plurality of semiconductor layers. The method of manufacturing the semiconductor device comprises a first step for growing a III-nitride compound semiconductor layer between the substrate and the plurality of semiconductor layers, and a second step for removing the substrate by etching the III-nitride compound semiconductor layer. | 08-06-2009 |
20090321713 | METHOD OF CONTROLLING ACTIVE LAYER OF III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s). | 12-31-2009 |
20100012920 | III-Nitride Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN. | 01-21-2010 |
20100032689 | III-Nitride Compound Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer. | 02-11-2010 |