Patent application number | Description | Published |
20130180848 | WATER SPLITTING OXYGEN EVOLVING CATALYST, METHOD OF PREPARING THE CATALYST, ELECTRODE HAVING THE CATALYST, AND WATER SPLITTING OXYGEN EVOLVING DEVICE HAVING THE ELECTRODE - A water splitting oxygen evolving catalyst including: a metal oxide particle including a metal oxide represented by Formula 1: | 07-18-2013 |
20130183593 | SOLID OXIDE, SOLID OXIDE ELECTRODE, SOLID OXIDE FUEL CELL INCLUDING THE SAME, AND METHODS OF PREPARING THE SAME - An oxide represented by Formula 1: | 07-18-2013 |
20130264512 | METHOD OF PREPARING TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, AND DEVICE INCLUDING THE SAME - A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material. | 10-10-2013 |
20130288889 | VISIBLE LIGHT SENSITIVE PHOTOCATALYST, METHOD OF PRODUCING VISIBLE LIGHT SENSITIVE PHOTOCATALYST, AND ELECTROCHEMICAL WATER DECOMPOSITION CELL AND ORGANIC MATERIAL DECOMPOSITION SYSTEM EACH INCLUDING VISIBLE LIGHT SENSITIVE PHOTOCATALYST - A visible light sensitive photocatalyst including: a composite including a first metal oxide, a second metal oxide, and a heterojunction therebetween, wherein the first and second metal oxides each include a Group 11 metal, wherein a first bond between metal atoms of the first metal oxide has a length that is smaller than a Van der Waals distance between the metals of the first bond, wherein a second bond between metal atoms of the second metal oxide has a length that is smaller than a Van der Waals distance between the metals of the second bond, and, wherein the composite has a band gap energy of about 1.0 eV to about 2.5 eV. | 10-31-2013 |
20140209456 | COMPOSITE PROTECTIVE LAYER FOR PHOTOELECTRODE STRUCTURE, PHOTOELECTRODE STRUCTURE INCLUDING THE COMPOSITE PROTECTIVE LAYER, AND PHOTOELECTROCHEMICAL CELL INCLUDING PHOTOELECTRODE STRUCTURE - A composite protective layer for a photoelectrode, the composite protective layer including a chemical protective layer; and a physical protective layer, wherein the chemical protective layer has corrosion rate of 0.1 Coulombs per square centimeter per 10 hours or less when evaluated at a water decomposition potential, and the physical protective layer has a moisture transmittance rate of 0.001 grams per square meter per day or less and has an electrical conductivity. | 07-31-2014 |
20140238847 | LIGHT ABSORBING LAYER FOR PHOTOELECTRODE STRUCTURE, PHOTOELECTRODE STRUCTURE INCLUDING THE SAME, AND PHOTOELECTROCHEMICAL CELL INCLUDING THE PHOTOELECTRODE STRUCTURE - A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (Cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer. | 08-28-2014 |
20150041715 | METHODS OF GRINDING SEMICONDUCTOR NANOCRYSTAL POLYMER COMPOSITE PARTICLES - A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite. | 02-12-2015 |
20150083969 | Nanocrystal particles and processes for synthesizing the same - A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide | 03-26-2015 |