Patent application number | Description | Published |
20090290355 | LIGHT-EMITTING DEVICE INCLUDING REFLECTIVE LAYER FORMED WITH CURVED SURFACE AND MANUFACTURING METHOD THEREOF - A flip-chip type light-emitting device and manufacturing method thereof provides a curved surface formed on the transparent electrode layer and a reflective layer transferred with the curved surface of the transparent electrode layer is additionally formed on the transparent electrode layer, so that the light generated from the active layer is incident to the reflective layer through the p-type nitride layer and the transparent electrode layer, and then is reflected from the curved surface of the reflective layer so as to exhibit an effect of extracting a larger amount of light in a vertical direction as compared to the conventional light-emitting device. | 11-26-2009 |
20100019269 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device and method of manufacturing the same provides a substrate, a semiconductor layer formed on the substrate and configured to generate light, and a transparent electrode layer formed on the semiconductor layer and configured to transmit the light generated from the semiconductor layer. The amount of a material of which the transparent electrode layer is made decreases gradually as it goes from the bottom to the top. | 01-28-2010 |
20120086037 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate; a light-emitting layer formed on the substrate; a transparent electrode layer formed on the light-emitting layer, the transparent electrode layer having a curved surface; and a reflective layer formed on and along the curved surface of the transparent electrode layer such that the curved surface of the transparent electrode layer is transferred so as to reflect the light generated from the light-emitting layer toward the light-emitting layer. | 04-12-2012 |
20140284646 | LIGHT GENERATING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light generating device and a method of manufacturing the light generating device are disclosed. The light generating device includes a p-type semiconductor layer, an n-type semiconductor layer, an active layer, a p-type electrode and an n-type electrode. The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The p-type electrode provides the p-type semiconductor layer with holes. The n-type electrode provides the n-type semiconductor layer with electrons. At least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively. Therefore, light efficiency is enhanced. | 09-25-2014 |
20140284653 | METHOD OF MANUFACTURING A LIGHT GENERATING DEVICE AND LIGHT GENERATING DEVICE MANUFACTURED THROUGH THE SAME - A method of manufacturing a light generating device and a light generating device manufactured through the method are disclosed. The method of manufacturing a light generating device according to an exemplary embodiment of the present invention, includes preparing a semiconductor stacking structure including a p-type semiconductor layer, an n-type semiconductor layer and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer; forming a metal thin film on the n-type semiconductor layer or on the p-type semiconductor layer; annealing the metal thin film to form a grain boundary at the metal thin film; applying liquid with graphite powder to the metal thin film with the grain boundary; thermally treating the semiconductor stacking structure to which the liquid with graphite power is applied; and removing the metal thin film with the grain boundary. | 09-25-2014 |
20150028375 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same. The light-emitting device comprises: a first conductive semiconductor layer; an active layer which is in contact with the first conductive semiconductor layer; a second conductive semiconductor layer which is in contact with the active layer and which has a patterned groove on a surface opposite the surface that is in contact with the active layer; a current-blocking layer which is formed on a bottom of the groove; a transparent conductive layer which is formed along a surface opposite the surface of the second conductive semiconductor layer that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer; a reflective layer which is formed on a surface opposite the surface of the transparent conductive layer that is in contact with the second conductive semiconductor layer; a support substrate which is formed on a surface opposite the surface of the reflective layer that is in contact with the transparent conductive layer; and an electrode that is patterned on a surface opposite the surface of the first conductive semiconductor layer that is in contact with the active layer. | 01-29-2015 |
20150084081 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED USING SAME - The present invention relates to a method for manufacturing a light-emitting device and the light-emitting device manufactured using same, which can reduce manufacturing costs, form nanopatterns in a large area, and increase light extraction efficiency. One embodiment of the present invention discloses the method for manufacturing a light-emitting device, comprising: a light-emitting structure preparation step for preparing a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are formed sequentially; a light extraction layer formation step for forming the upper part of the second conductive semiconductor layer as a light extraction layer having an uneven pattern; a dipping step for dipping the light-emitting structure having the light extraction layer in a solution in which nanomaterials are dispersed; and an adsorption step for adsorbing the nanomaterials to the light extraction layer. | 03-26-2015 |
20150162500 | TRANSPARENT ELECTRODE AND METHOD FOR FORMING TRANSPARENT ELECTRODE - Provided are a transparent electrode and a method for forming the transparent electrode. First electrodes having high conductivity are formed with a pattern on the semiconductor layer to be in ohmic contact with the semiconductor layer where the transparent electrode is to be formed, and second electrodes having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range are formed so that spaces between the first electrodes formed with the pattern are filled with second electrodes, so that it is possible to obtain a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic characteristic with respect to a semiconductor layer. | 06-11-2015 |