Patent application number | Description | Published |
20080246875 | SYSTEM AND METHOD FOR FREQUENCY TRANSLATION USING AN IMAGE REJECT MIXER - Frequency translation, such as frequency up conversion of a video baseband or intermediate frequency to a desired frequency division broadcast channel, is provided utilizing a single sideband or image reject mixer and filtering having relaxed selectivity requirements. According to a preferred embodiment, a first single sideband mixer accepts an input signal at an intermediate frequency and up converts this signal to a high intermediate frequency. The image rejection provided by the single sideband mixer in combination with simple filtering provide sufficient signal quality to achieve desired levels of desired signal isolation, such as on the order of 40 dB. Preferably, a second single sideband mixer accepts the high intermediate frequency signal and down converts this signal to a desired transmission or broadcast frequency. The image rejection provided by the single sideband mixers in combination with simple filtering provide sufficient desired signal isolation, such as on the order of 40 dB, thereby relax the linearity requirements of amplifiers utilized in the frequency translation system. A preferred embodiment of the present invention disposes all or substantially all the frequency translation circuit elements on a single substrate. | 10-09-2008 |
20090066847 | BROADBAND INTEGRATED TUNER - A broadband integrated receiver for receiving input signals and outputting composite video and audio signals is disclosed. The receiver employs an up-conversion mixer and a down-conversion mixer in series to produce an intermediate signal. An intermediate filter between the mixers performs coarse channel selection. The down-conversion mixer may be an image rejection mixer to provide additional filtering. | 03-12-2009 |
20100265412 | Broadband Integrated Tuner - A broadband integrated receiver for receiving input signals and outputting composite video and audio signals is disclosed. The receiver employs an up-conversion mixer and a down-conversion mixer in series to produce an intermediate signal. An intermediate filter between the mixers performs coarse channel selection. The down-conversion mixer may be an image rejection mixer to provide additional filtering. | 10-21-2010 |
Patent application number | Description | Published |
20110026174 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same - An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type. | 02-03-2011 |
20110199146 | High-Frequency Switching Circuit - A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit. | 08-18-2011 |
20110201281 | High Frequency Switching Circuit and Method for Determining a Power of a High Frequency Signal - A high frequency switching circuit, including a high frequency switching element. The high frequency switching element including a first channel terminal and a second channel terminal, wherein the high frequency switching element is configured to switchably route a high frequency signal via a channel path between the first channel terminal and the second channel terminal. The high frequency switching circuit further includes a power detection circuit, wherein the power detection circuit is configured to obtain a first measurement signal from the first channel terminal and a second measurement signal from the second channel terminal, and to combine the first measurement signal and the second measurement signal to derive, in dependence on both the first measurement signal and the second measurement signal, a power signal describing a power value of the high frequency signal routed via the channel path of the high frequency switching element. | 08-18-2011 |
20120319137 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same - An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type. | 12-20-2012 |
20130278323 | High-Frequency Switching Circuit - A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit. | 10-24-2013 |
20140001491 | Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same | 01-02-2014 |
20140015593 | RF Switch, Mobile Communication Device and Method for Switching an RF Signal - An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor. | 01-16-2014 |
20140070872 | RF Switch Circuit, RF Switch and Method for Switching RF Signals - An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors. | 03-13-2014 |
Patent application number | Description | Published |
20090115487 | Level Converter - A level converter for providing an output signal at a circuit output based on an input signal includes an output coupling circuit formed to provide an output signal based on a first partial output signal and a second partial output signal, a driver circuit formed to provide the second partial output signal such that the second partial output signal is switchable between two different signal levels depending on the state of the input signal, wherein an input of the driver circuit is capacitively coupled to the input of the level converter in order to allow for switching between the signal levels of the second partial output signal by the capacitive coupling in response to a change in the state of the input signal, and a holding circuit formed to keep the state of the second partial output signal constant in case of a constant state of the input signal. | 05-07-2009 |
20090278206 | High-Frequency Switching Transistor and High-Frequency Circuit - A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode. The barrier region dopant concentration and the substrate dopant concentration are chosen for generating a space-charge region around the source region and the drain region and for depleting the barrier region. | 11-12-2009 |
20110109370 | Level Converter - A level converter for providing an output signal at a circuit output based on an input signal includes an output coupling circuit formed to provide an output signal based on a first partial output signal and a second partial output signal, a driver circuit formed to provide the second partial output signal such that the second partial output signal is switchable between two different signal levels depending on the state of the input signal, wherein an input of the driver circuit is capacitively coupled to the input of the level converter in order to allow for switching between the signal levels of the second partial output signal by the capacitive coupling in response to a change in the state of the input signal, and a holding circuit formed to keep the state of the second partial output signal constant in case of a constant state of the input signal. | 05-12-2011 |
20130076429 | RF Switch Circuit, RF Switch and Method for Switching RF Signals - An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors. | 03-28-2013 |
20140001550 | High-Frequency Switching Transistor and High-Frequency Circuit | 01-02-2014 |