| Patent application number | Description | Published |
|---|
| 20090017614 | SEMICONDUCTOR DEVICE - In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film. | 01-15-2009 |
| 20090079007 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention can prevent occurrence of an off-leak current in the NMISFETs formed over the Si (110) substrate and having a silicided source/drain region. The semiconductor device includes N channel MISFETs (Metal Insulator Semiconductor Field Effect Transistors) which are formed over a semiconductor substrate having a main surface with a (110) plane orientation and have a source region and a drain region at least one of which has thereover nickel silicide or a nickel alloy silicide. Of these NMISFETs, those having a channel width less than 400 nm are laid out so that their channel length direction is parallel to a <100> crystal orientation. | 03-26-2009 |
| 20090291537 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including the steps of preparing a silicon substrate which has a main surface whose plane direction is a surface (100); forming an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a gate electrode, a source region, a drain region and a channel whose channel length direction is parallel to a crystal orientation <100> of the silicon substrate; and forming NiSi over the gate electrode and NiSi | 11-26-2009 |
| 20100044859 | Semiconductor device and method of fabricating semiconductor device - There is provided a semiconductor device including a semiconductor substrate on which at least one electrode pad is formed, a rewiring layer connected to the electrode pad, and an encapsulation part which encapsulates the semiconductor substrate, the electrode pad being formed of a first region including a connection part connected to the rewiring layer and a second region other than the first region, the device including: an insulating film provided on the semiconductor substrate, having an opening at which the first region in the electrode pad is exposed, and covering the second region of the electrode pad, wherein the rewiring layer is connected to the first region of the electrode pad exposed at the opening, and extends across the insulating film so as to cover the second region of the electrode pad from above. | 02-25-2010 |
| 20100171183 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS - An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs. | 07-08-2010 |
| 20100230761 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To improve the performance of semiconductor devices. Over an n | 09-16-2010 |
| 20100327454 | SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion. | 12-30-2010 |
| 20110092022 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a semiconductor chip having a plurality of electrode pads, and a rewiring pattern having a plurality of interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes a plurality of columnar electrodes each of which has a main body section and a protrusion section, and a sealing section which has a top face having a height the same as the top faces of the protrusion sections. The semiconductor device also includes solder balls formed on the protrusion sections. The semiconductor device also has a plurality of trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed face defined by the trenches. Each solder ball is electrically connected to the top face and side faces of the protrusion section of each electrode. | 04-21-2011 |
| 20110092037 | SEMICONDUCTOR DEVICE - In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film. | 04-21-2011 |
