Patent application number | Description | Published |
20090173945 | METHOD FOR FORMING CONDUCTIVE FILM, THIN-FILM TRANSISTOR, PANEL WITH THIN-FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular. | 07-09-2009 |
20090236603 | PROCESS FOR FORMING A WIRING FILM, A TRANSISTOR, AND AN ELECTRONIC DEVICE - A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion. | 09-24-2009 |
20090303406 | METHOD FOR FORMING WIRING FILM, TRANSISTOR AND ELECTRONIC DEVICE - A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films. | 12-10-2009 |
20110068338 | METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit. | 03-24-2011 |
20110068402 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film | 03-24-2011 |
20120119269 | METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR - A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor. | 05-17-2012 |
Patent application number | Description | Published |
20090086213 | OPTICAL TOMOGRAPHIC IMAGING SYSTEM - The optical tomographic imaging system includes a main body for acquiring an optical tomographic image, an optical probe having a rotary optical fiber for guiding the measuring and returning light, a measuring unit, and a sheath rotatably holding the rotary optical fiber and the measuring unit, a rotary drive unit for rotatably coupling the rotary optical fiber to a stationary optical fiber connected with the main body, an extra length handling mechanism for winding the optical probe into a loop having at least a minimum diameter and an attaching unit removably attaching the optical probe. The extra length handling mechanism winds an extra length of the optical probe by a length depending upon a length up to the location to be examined. The system eliminates the need to change the optical probe depending upon the location to be examined and the need to adjust the optical path length of reference light. | 04-02-2009 |
20090135429 | OPTICAL CONNECTOR AND AN OPTICAL TOMOGRAPHIC IMAGING SYSTEM USING THE SAME - The optical connector includes a holder unit, a first optical fiber fixedly supported by the holder unit and having an inclined end face, a first collimating lens spaced from the inclined end face, a mounting unit supported relative to the holder unit, a second optical fiber disposed opposite the first collimating lens and having an inclined end face, a second collimating lens disposed between the first collimating lens and the second optical fiber and spaced from the inclined end face of the second optical fiber, wherein an optical transmission system comprising the first optical fiber and the first collimating lens is symmetric to an optical transmission system comprising the second optical fiber and the second collimating lens with respect to a plane perpendicular to the optical axis. | 05-28-2009 |
20090251704 | OPTICAL ROTARY ADAPTER AND OPTICAL TOMOGRAPHIC IMAGING SYSTEM USING THE SAME - The optical rotary adapter is used with an optical tomographic imaging system for acquiring an optical tomographic image of an object under measurement. The adapter includes a fixed sleeve, a stationary optical fiber supported by the fixed sleeve and having an inclined end face, a stationary collimating lens spaced a given distance from the inclined end face, a mounting cylinder carried rotatably with respect to the fixed sleeve, a rotary optical fiber mounted to the mounting cylinder and having an inclined end face, a rotary collimating lens mounted to the mounting cylinder and disposed with a given distance from the inclined end face, and a rotation actuating device for rotating said mounting cylinder. The central axes of the stationary and rotary optical fibers are offset from or inclined with respect to a central axis of rotation of the mounting cylinder to reduce attenuation of returning light from the object. | 10-08-2009 |