Patent application number | Description | Published |
20080308859 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a first electrode layer, a second insulating film, and a second electrode layer provided on the semiconductor substrate in order, and the peripheral circuit having the first insulating film, the first electrode layer, the second insulating film having an opening for the peripheral circuit, and the second electrode layer electrically connected to the first electrode layer through the opening for the peripheral circuit, wherein a thickness of the first electrode layer under the second insulating film of the peripheral circuit is thicker than a thickness of the first electrode layer of the memory cell. | 12-18-2008 |
20090016108 | NONVOLATILE SEMICONDUCTOR MEMORY - A method of reading out data from nonvolatile semiconductor memory including the steps of applying a first voltage to a bit line contact; applying a second voltage to a source line contact, wherein the second voltage is substantially smaller than the first voltage; applying a third voltage gates of third and fourth select gate transistors, the third voltage configured to bring the third and fourth select gate transistors into conduction; applying a fourth voltage to gates of the plurality of memory cell transistors of a second memory cell unit, the fourth voltage configured to bring the plurality of memory cell transistors of the second memory cell unit into conduction or not, depending on the data that is stored in the memory cell unit; and applying a fifth voltage to gates of the plurality of memory cell transistors of a first memory cell unit, the fifth voltage configured to bring the plurality of memory cell transistors of the first memory cell unit into conduction; wherein the fifth voltage is bigger than the fourth voltage. | 01-15-2009 |
20090057749 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure. | 03-05-2009 |
20090212352 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 08-27-2009 |
20090267138 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A charge trap type non-volatile memory device has memory cells formed on a silicon substrate at a predetermined interval via an element isolation trench along a first direction in which word lines extend. Each of the memory cells has a tunnel insulating film formed on the silicon substrate, a charge film formed on the tunnel insulating film, and a common block film formed on the charge film. The common block film is formed in common with the memory cells along first direction. An element isolation insulating film buried in the element isolation trench has an upper portion of a side wall of the element isolation insulating film which contacts with a side wall of the charge film in each of the memory cells and a top portion of the element isolation insulating film which contacts with the common block film. A control electrode film is formed on the common block film. | 10-29-2009 |
20100117135 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer. | 05-13-2010 |
20110053363 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a first electrode layer, a second insulating film, and a second electrode layer provided on the semiconductor substrate in order, and the peripheral circuit having the first insulating film, the first electrode layer, the second insulating film having an opening for the peripheral circuit, and the second electrode layer electrically connected to the first electrode layer through the opening for the peripheral circuit, wherein a thickness of the first electrode layer under the second insulating film of the peripheral circuit is thicker than a thickness of the first electrode layer of the memory cell. | 03-03-2011 |
20110147822 | Semiconductor memory device and method for manufacturing the same - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 06-23-2011 |
20120037973 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure. | 02-16-2012 |
Patent application number | Description | Published |
20110115014 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a plurality of semiconductor pillars and a charge storage film. The stacked body is provided on the substrate, with a plurality of insulating films alternately stacked with a plurality of electrode films, and includes a hydrophobic layer provided between one of the insulating films and one of the electrode films. The hydrophobic layer has higher hydrophobicity than the electrode films. The plurality of semiconductor pillars extend in a stacking direction of the stacked body and pierce the stacked body, and the charge storage film is provided between the electrode films and one of the semiconductor pillars. | 05-19-2011 |
20120241844 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes: first and second stacked bodies, first and second semiconductor pillars, a connection portion, a memory film, and a partitioning insulating layer. The stacked bodes include electrode films stacked along a first axis and an inter-electrode insulating film provided between the electrode films. Through-holes are provided in the stacked bodies. The semiconductor pillars are filled into the through-holes. The connection portion electrically connects the semiconductor pillars. The memory film is provided between the semiconductor pillars and the electrode films. The partitioning insulating layer partitions the first and second electrode films. A side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side have a portion parallel to a plane orthogonal to a second axis from the first stacked body to the second stacked body. | 09-27-2012 |
20130056818 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis perpendicular to a major surface of the substrate. The semiconductor layers penetrate through the structural body along the first axis. The memory film is provided between the electrode films and the semiconductor layer. The connecting member is provided between the substrate and the structural body and connected to respective end portions of two adjacent ones of the semiconductor layers. The conductive member is provided between the substrate and the connecting member, extends from the memory region to the non-memory region, includes a recess provided above the non-memory region, and includes a first silicide portion provided in the recess. | 03-07-2013 |
20130228841 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method is disclosed for manufacturing nonvolatile semiconductor memory device including forming a stacked body by alternately stacking an electrode layer and a layer-to-be-etched, and forming an oxidized layer between the layer-to-be-etched provided at least in any side of an upper side and a lower side of the electrode layer and the electrode layer. The method can include forming a groove which passes through the stacked body. The method can include embedding an insulating body within the groove. The method can include forming a hole which passes through the stacked body. The method can include selectively removing the layer-to-be-etched via the hole. The method can include forming a charge storage layer in an inner side of the hole. The method can include forming a channel body layer in an inner side of the charge storage layer. | 09-05-2013 |
20130228852 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of insulating isolation sections provided so as to extend in a first direction, isolate the stacked body in a second direction, and have a projection projecting from the stacked body. Each insulating isolation section has a side wall including recessed sections and projected sections repeated along the first direction. The method includes forming a sidewall film on a side wall of the projection of the insulating isolation section, and forming a plurality of first holes surrounded by the sidewall film and isolated by the sidewall film in the first direction, between the plurality of insulating isolation sections. The method includes forming a second hole in the stacked body provided under the first hole by etching with the insulating isolation section and the sidewall film used as a mask. | 09-05-2013 |
20130234235 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE - In one embodiment, a manufacturing method of a semiconductor memory device is disclosed. The method can include forming a stacked body on a substrate. The stacked body includes first silicon films containing impurities and having a concentration difference of the impurities provided among different layers, and non-doped second silicon films each provided between the first silicon films. The method can include forming a hole in the stacked body. The method can include removing the second silicon films by etching through the hole and forming an inter-electrode space between the first silicon films. The method can include forming a memory film including a charge storage film on a side wall of the hole and also forming at least a part of the memory film in the inter-electrode space. | 09-12-2013 |
20130234332 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked. The semiconductor device includes a plurality of contact electrodes, a plurality of first insulating portions, and a plurality of second insulating portions. The plurality of contact electrodes extends in a stacking direction of the stacked body. Each of the contact electrodes reaches corresponding one of the conductive layers. The plurality of first insulating portions respectively is provided between the plurality of contact electrodes and the stacked body. The plurality of second insulating portions respectively is provided between the plurality of first insulating portions and the stacked body. | 09-12-2013 |
20140027836 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes: first and second stacked bodies, first and second semiconductor pillars, a connection portion, a memory film, and a partitioning insulating layer. The stacked bodes include electrode films stacked along a first axis and an inter-electrode insulating film provided between the electrode films. Through-holes are provided in the stacked bodies. The semiconductor pillars are filled into the through-holes. The connection portion electrically connects the semiconductor pillars. The memory film is provided between the semiconductor pillars and the electrode films. The partitioning insulating layer partitions the first and second electrode films. A side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side have a portion parallel to a plane orthogonal to a second axis from the first stacked body to the second stacked body. | 01-30-2014 |
20140061752 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device includes forming a stacked body on a substrate. The stacked body includes a plurality of first conductive layers including a metallic element as a main component and a plurality of second conductive layers including a metallic element as a main component provided respectively between the first conductive layers. The method includes making a hole to pierce the stacked body. The method includes making a slit to divide the stacked body. The method includes making a gap between the first conductive layers by removing the second conductive layers by etching via the slit or the hole. The method includes forming a memory film including a charge storage film at a side wall of the hole. The method includes forming a channel body on an inner side of the memory film inside the hole. | 03-06-2014 |
20150061068 | NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING PATTERN ON WAFER AND METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE USING SAME - According to an embodiment, a method for fabricating a pattern includes forming a mask covering a first layer, and a second layer selectively provided on the first layer, and forming a groove dividing the first layer and the second layer using the mask. The mask includes a first portion formed on a region of the first layer on a first side of the second layer, a second portion formed on a region of the first layer on a second side of the second layer opposite to the first side, first extending parts extending over the second layer from the first portion toward the second portion, and second extending parts extending over the second layer from the second portion toward the first portion. Each of the second extending parts is located between the first extending parts adjacent to each other. | 03-05-2015 |
Patent application number | Description | Published |
20110216597 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The semiconductor layer includes a columnar portion that extends in a perpendicular direction to a substrate. The charge storage layer is formed around a side surface of the columnar portion. The plurality of first conductive layers are formed around the side surface of the columnar portion and the charge storage layer. A control circuit comprises a plurality of second conductive layers, an insulating layer, and a plurality of plug layers. The plurality of second conductive layers are formed in the same layers as the plurality of first conductive layers. The insulating layer is formed penetrating the plurality of second conductive layers in the perpendicular direction. The plurality of plug layers are formed penetrating the insulating layer in the perpendicular direction. The insulating layer has a rectangular shaped cross-section with a constricted portion in a horizontal direction to the substrate. The constricted portion is positioned on a long side of the cross-section. | 09-08-2011 |
20150243512 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method of manufacturing a semiconductor device includes forming a first mask layer on a workpiece layer. The method further includes forming a concave portion in the workpiece layer by first etching using the first mask layer. The method further includes forming a second mask layer on the workpiece layer in which the concave portion is formed. The method further includes processing the concave portion of the workpiece layer by second etching using the second mask layer. | 08-27-2015 |
20150262932 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer interconnection structure unit; a stacked body; a channel body layer; a memory film; a contact electrode. The multilayer interconnection structure unit is provided on the semiconductor substrate, and the multilayer interconnection structure unit has interconnections. The stacked body is provided on the multilayer interconnection structure unit, and each of electrode layers and each of first insulating layers are alternately arranged in the stacked body. The channel body layer extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the channel body layer and each of the electrode layers. And the contact electrode extends in the stacked body in the stacking direction, and the contact electrode electrically connects any one of the electrode layers and any one of the interconnection layers. | 09-17-2015 |