Patent application number | Description | Published |
20080197762 | Fluorescent Lamp - Disclosed is a fluorescent lamp having a phosphor layer formed on the inner wall of a lamp tube. The average particle size of the phosphors used in the phosphor layer is not more than 1 μm, and the thickness of the phosphor layer is not more than 5 μm. By having such a constitution, the ultraviolet light having a wavelength of 254 nm which is emitted from mercury sealed within the lamp tube can be efficiently converted into visible light and the visible light can be efficiently discharged outside the lamp tube. | 08-21-2008 |
20080204050 | Method of Measuring Electronic Device and Measuring Apparatus - In a method for measuring an electronic device which is an object to be measured, a passive element is connected to the electronic device in parallel, and electric parameters of the electronic device are extracted by measuring an impedance of the entire circuit. | 08-28-2008 |
20080206072 | Vacuum Apparatus - An object of this invention is to provide a vacuum apparatus used in the field of semiconductor production and capable of suppressing power consumption. | 08-28-2008 |
20080241016 | PLASMA PROCESSING SYSTEM, PLASMA MEASUREMENT SYSTEM, PLASMA MEASUREMENT METHOD, AND PLASMA CONTROL SYSTEM - A microwave plasma processing system | 10-02-2008 |
20080241587 | Film-Forming Apparatus And Film-Forming Method - For increasing the film-forming rate and enabling uniform film formation and waste elimination of raw material, a film-forming method and a film-forming apparatus can reach an evaporated film-forming material to a surface of a substrate by the flow of a transport gas so as to control the film-forming conditions by the flow of the gas. Thereby a uniform thin film can be deposited on the large-area substrate. That is, by directing the evaporated raw material toward the substrate, it is possible to increase the film-forming rate and achieve uniform film formation. | 10-02-2008 |
20080268657 | Plasma Processing Method and Method for Manufacturing an Electronic Device - The application of oxynitriding treatment to electronic appliances involve the problem that N | 10-30-2008 |
20080277715 | Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device - In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas. | 11-13-2008 |
20080302406 | Solar Cell Panel - Generally, solar cell panels are black, being inferior in design. An object of the invention is to provide a transparent plate which develops color without lowering power generation efficiency; and a solar cell panel which uses such transparent plate. A solar cell panel according to the invention has a construction such that the solar cell is covered by a transparent plate which is characterized by absorbing infrared light and emitting visible light. Since the transparent plate develops color by using infrared light which does not contribute to power generation, there is obtained a solar cell panel which is superior in the viewpoint of decoration without lowering the power generation efficiency of solar cells. | 12-11-2008 |
20080302761 | PLASMA PROCESSING SYSTEM AND USE THEREOF - A plasma processing system | 12-11-2008 |
20080303744 | PLASMA PROCESSING SYSTEM, ANTENNA, AND USE OF PLASMA PROCESSING SYSTEM - A plasma processing system | 12-11-2008 |
20080315201 | Apparatus for Producing Electronic Device Such as Display Device, Method of Producing Electronic Device Such as Display Device, and Electronic Device Such as Display Device - An object of the present invention is to reduce an adverse effect of an atmosphere in a heat treatment device used in production of an electronic device, imparted on characteristics of the produced electronic device. To attain the object, an inner surface of the heat treatment device is covered with an oxide passive-state film and bringing the surface roughness of the inner surface to 1 μm or less in terms of a central mean roughness Ra. According to this type of heat treatment device, in curing a heat curable resin, deterioration in the heat curable resin caused by decomposition or dissociation of the heat curable resin, can be reduced. | 12-25-2008 |
20080318370 | Semiconductor Integrated Circuit Switch Matrix - There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation. | 12-25-2008 |
20080318431 | Shower Plate and Plasma Treatment Apparatus Using Shower Plate - A shower plate for plasma processing, which is formed by a plurality of pipes. A pipe includes a porous material member disposed along the pipe, which has a predetermined porosity with respect to a material gas, and which has an outwardly convex shape, and a metal member faced to the porous material member and that forms a material gas flow path in combination with the porous material member. A nozzle structure capable of releasing the material gas with a spread can be realized. | 12-25-2008 |
20090000742 | Shower Plate and Method for Manufacturing the Same - Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage | 01-01-2009 |
20090001471 | Semiconductor Device - For equalizing the rising and falling operating speeds in a CMOS circuit, it is necessary to make the areas of a p-type MOS transistor and an n-type MOS transistor different from each other due to a difference in carrier mobility therebetween. This area unbalance prevents an improvement in integration degree of semiconductor devices. | 01-01-2009 |
20090023231 | Semiconductor Device Manufacturing Method and Method for Reducing Microroughness of Semiconductor Surface - Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved. | 01-22-2009 |
20090032115 | VACUUM THERMAL INSULATING VALVE - The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S | 02-05-2009 |
20090038946 | METAL OXIDE FILM, LAMINATE, METAL MEMBER AND PROCESS FOR PRODUCING THE SAME - A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm | 02-12-2009 |
20090041929 | Film Forming Apparatus and Film Forming Method - In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel. | 02-12-2009 |
20090051280 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer that is formed between the first electrode and the second electrode and includes a light-emitting layer. The second electrode includes a conductive protection layer that is formed on the organic layer so as to protect the organic layer and a conductive main electrode layer that is formed on the protection layer. | 02-26-2009 |
20090065480 | Plasma Processing Apparatus - Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed. | 03-12-2009 |
20090072327 | Semiconductor Storage Device and Method for Manufacturing the Same - [Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device. | 03-19-2009 |
20090087545 | Film Forming Apparatus, Evaporating Jig, and Measurement Method - Provided are an evaporating jig by which a thin film, especially an organic EL film, can be uniformly formed over a long time, and a film forming apparatus including the evaporating jig. The evaporating jig is provided with an evaporating pan, having a bottom plane and side planes arranged to stand from the bottom plane, for defining a material containing space opened inside the side planes; and partitioning plates for partitioning the material containing space into a plurality of partial spaces. The partitioning plates are provided with locking pieces having a height which permits the partial spaces to be continuous on a bottom plane side of the evaporating pan. | 04-02-2009 |
20090101070 | Member for a Plasma Processing Apparatus and Method of Manufacturing the Same - A member for a plasma processing apparatus, which is excellent in film-formability, durability, and reliability, is provided. | 04-23-2009 |
20090103009 | Liquid crystal display and light guide plate - A large liquid crystal display ( | 04-23-2009 |
20090104787 | PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS - A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots. | 04-23-2009 |
20090107521 | CHEMICAL SOLUTION OR PURE WATER FEEDER, SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING APPARATUS, OR SUBSTRATE PROCESSING METHOD - By adding a perfluoromonomer to PVDF being a fluororesin to soften it, the oxygen permeability can be significantly reduced and a flexible fluororesin tube can be obtained. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer. The tube is used between a chemical solution or ultrapure water feeder and a chemical solution or ultrapure water utilizing apparatus such as a cleaning apparatus or a wet etching apparatus. | 04-30-2009 |
20090108413 | Interlayer Insulating Film, Interconnection Structure, and Methods of Manufacturing the Same - This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF | 04-30-2009 |
20090110823 | Film-forming material and method for predicting film-forming material - Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e | 04-30-2009 |
20090120673 | Multilayer circuit board and electronic device - A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board. The multilayered circuit board comprises, mounted on a substrate, plural wiring layers and plural insulating layers positioned between the plural wiring layers, wherein at least part of the plural insulating layers are composed of a porous insulating layer containing at least any of materials selected from a porous material group consisting of porous material, aerogel, porous silica, porous polymer, hollow silica and hollow polymer, and a non-porous insulating layer formed on at least one surface of the porous insulating layer and not containing the porous material group. | 05-14-2009 |
20090123716 | Magnetic Substance-Containing Insulator and Circuit Board and Electronic Device Using the Same - To provide a magnetic substance-containing insulator that can achieve an effect of increasing the permeability without comparatively increasing the mixing concentration of a magnetic substance and, by applying the thus obtained magnetic substance-containing insulator to a circuit board, that can improve the characteristic impedance and achieve an effect of reducing the power consumption, and to provide a circuit board and an electronic component each using such a magnetic substance-containing insulator. | 05-14-2009 |
20090133713 | Multilayer structural body and method for cleaning the same - It has been difficult to provide a large-sized ceramic member quickly and economically. A multilayer structure is produced by forming a ceramic film on a base which is made of a material that can be shaped comparatively easily. The ceramic film is formed by a plasma spraying method, CVD method, PVD method, sol-gel method or the like. Alternatively, the ceramic film may be formed by a method combined with a spray deposit film. | 05-28-2009 |
20090134120 | Plasma Processing Method and Plasma Processing Apparatus - A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing. | 05-28-2009 |
20090135109 | ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHODS OF MANUFACTURING THE SAME - In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB | 05-28-2009 |
20090142588 | Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure - Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed. | 06-04-2009 |
20090156084 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity. | 06-18-2009 |
20090162995 | Semiconductor Device Manufacturing Method and Semiconductor Manufacturing Apparatus - By hydrogen-terminating a semiconductor surface using a solution containing HF | 06-25-2009 |
20090166739 | Semiconductor Device - In order to obtain substantially the same operating speed of a p-type MOS transistor and an n-type MOS transistor forming a CMOS circuit, the n-type MOS transistor has a three-dimensional structure having a channel region on both the (100) plane and the (110) plane and the p-type MOS transistor has a planar structure having a channel region only on the (110) plane. Further, both the transistors are substantially equal to each other in the areas of the channel regions and gate insulating films. Accordingly, it is possible to make the areas of the gate insulating films and so on equal to each other and also to make the gate capacitances equal to each other. | 07-02-2009 |
20090169789 | Resin pipe - A resin pipe has an inner layer made of a fluororesin, an intermediate layer of nylon, and an outermost layer made of a fluororesin and covering the intermediate layer. | 07-02-2009 |
20090169854 | Porous Member - To provide a porous member that can suppress energy loss in a microwave band and can evenly disperse gas when used in a field requiring a high level of cleanness. The porous member is formed of porous ceramics and has a dielectric loss tangent of not more than 1×10 | 07-02-2009 |
20090171507 | GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED - An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block. | 07-02-2009 |
20090184100 | HEAT RESISTING VACUUM INSULATING MATERIAL AND HEATING DEVICE - A heating device which can prevent unused active chemical species from attaching to the bodies of various vacuum devices or depositing on the inner wall of their exhaust pipes to thereby be able to make the size of exhaust pipes smaller than before and make the exhaust pipe maintenance easier. The heating device comprises a heat resisting vacuum insulator ( | 07-23-2009 |
20090202708 | Apparatus for Manufacturing Light Emitting Elements and Method of Manufacturing Light Emitting Elements - An apparatus of manufacturing a light emitting element having a plurality of layers including an organic layer on a substrate to be processed is disclosed. The apparatus includes a plurality of process chambers to which the substrate to be processed is transferred in series, wherein the plurality of process chambers are substantially linearly connected to one another and wherein adjacent two of the process chambers are filled with gas that does not react with a layer on the substrate to be processed when the substrate to be processed is transferred between the two process chambers. | 08-13-2009 |
20090205782 | PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, a metal made lattice-like shower plate | 08-20-2009 |
20090206728 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A substrate process apparatus that forms a light emitting device configured with an organic layer including a light emitting layer on a substrate to be processed, the organic layer being formed between a first electrode and a second electrode, includes an organic layer forming apparatus wherein the organic layer is formed on the first electrode formed on the substrate to be processed; an electrode forming apparatus wherein the second electrode is formed on the organic layer; and an etching apparatus wherein the organic layer is etched. | 08-20-2009 |
20090214400 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same. | 08-27-2009 |
20090231514 | Backlight Unit for Liquid Crystal Display - As a shape on a cross-section vertical to a longitudinal direction (L) of the hot cathode fluorescent lamp ( | 09-17-2009 |
20090236133 | Method of Manufacturing a Polymer and Poymer Material - In order to provide a method of manufacturing a polymer containing an extremely small amount of residual unreacted monomer component, and a material using the polymer, megasonic is directly radiated to a polymer containing a residual unreacted monomer under an atmosphere free of oxygen and moisture to thereby perfectly complete polymerization. | 09-24-2009 |
20090246524 | POROUS CALCIUM OXIDE PARTICULATE AND POROUS CALCIUM HYDROXIDE PARTICULATE - Granular calcium oxide and calcium hydroxide which are highly reactive with a halide gas and its decomposition products and favorably employable for filling a gas-fixing unit ( | 10-01-2009 |
20090250755 | Semiconductor Device - A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer. | 10-08-2009 |
20090263306 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, WIRING SUBSTRATE, AND SILICON CARBIDE MANUFACTURING METHOD - A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less. | 10-22-2009 |
20090263566 | Reduced Pressure Deposition Apparatus and Reduced Pressure Deposition Method - In a deposited thin film for use in a semiconductor device or the like for which a high integration degree and ultrafine machining are required, adsorption of contaminant, and particularly, of organic substances on the deposited thin film has become a problem. A phenomenon has been found out that, in a case where a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with a case where the gas pressure is maintained in a molecular flow region. Based on this phenomenon, the gas pressure is controlled so that the gas pressure can be set in the molecular flow region at a time of forming the deposited thin film and so that the gas pressure can be set in the viscous flow region while such deposition is not being performed, thus making it possible to form the deposited thin film with less contamination from the organic substances. | 10-22-2009 |
20090267122 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode. | 10-29-2009 |
20090272721 | Athmosphere-Controlled Bonding Apparatus, Bonding Method, and Electronic Device - In a bonding apparatus for bonding under pressure a pressure-bonding portion, the concentration of water in a pressure-bonding portion atmosphere inside the apparatus is set smaller than that in an atmosphere outside the apparatus, thereby enabling pressure bonding under low-temperature and low-pressure conditions. In this case, the amount of adsorbed water on each surface of a bonding metal terminal and a to-be-bonded metal terminal forming the pressure-bonding portion is set to 1×10 | 11-05-2009 |
20090277379 | Film coating apparatus - A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface. | 11-12-2009 |
20090278134 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - In a semiconductor device according to the present invention, an insulator layer on a substrate is provided with a trench. A gate electrode is formed in the trench so that an upper surface of the gate electrode is approximately flush with an upper surface of the insulator layer. On the gate electrode, a semiconductor layer is provided via a gate insulating film. At least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. Particularly, the gate insulating film includes an insulator coating film provided on the gate electrode, and an insulator CVD film formed on the insulator coating film. | 11-12-2009 |
20090286405 | SHOWER PLATE, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate in which there's no need for a cover plate. The shower plate | 11-19-2009 |
20090298295 | METHOD FOR TREATING SURFACE OF A GLASS SUBSTRATE - A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. | 12-03-2009 |
20090302382 | Power Ic Device and Method of Manufacturing Same - In one embodiment of the present invention, a power IC device is disclosed containing a power MOS transistor with a low ON resistance and a surface channel MOS transistor with a high operation speed. There is also provided a method of manufacturing such a device. A chip has a surface of which the planar direction is not less than −8° and not more than +8° off a silicon crystal face. The p-channel trench power MOS transistor includes a trench formed vertically from the surface of the chip, a gate region in the trench, an inversion channel region on a side wall of the trench, a source region in a surface layer of the chip, and a drain region in a back surface layer of the chip. The surface channel MOS transistor has an inversion channel region fabricated so that an inversion channel current flows in a direction not less than −8° and not more than +8° off the silicon crystal direction. | 12-10-2009 |
20090309138 | Transistor and semiconductor device - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 12-17-2009 |
20090311869 | SHOWER PLATE AND MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate | 12-17-2009 |
20090321832 | Semiconductor Device - A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer. | 12-31-2009 |
20100000769 | COMPOSITE MAGNETIC BODY, METHOD OF MANUFACTURING THE SAME, CIRCUIT BOARD USING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME - There are provided a composite magnetic body exhibiting a sufficiently low magnetic loss at frequencies of several hundreds of megahertz to several gigahertz, and a method of manufacturing the same. The composite magnetic body contains a magnetic powder dispersed in an insulating material. The magnetic powder is in a spherical shape or an elliptic shape. The composite magnetic body has any one of the following characteristics (a) to (c):
| 01-07-2010 |
20100001744 | STANDING WAVE MEASURING UNIT AND STANDING WAVE MEASURING METHOD IN WAVEGUIDE, ELECTROMAGNETIC WAVE UTILIZATION APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength λg or the like in a waveguide. | 01-07-2010 |
20100025821 | ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD - When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode. | 02-04-2010 |
20100032844 | INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME - A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable. | 02-11-2010 |
20100038722 | MIS TRANSISTOR AND CMOS TRANSISTOR - A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate ( | 02-18-2010 |
20100044846 | THREE-DIMENSIONAL STRUCTURAL SEMICONDUCTOR DEVICE - A semiconductor device of three-dimensional structure in which the operating frequency of a chip can be raised while preventing the chip area from increasing. The three-dimensional structure semiconductor device have a first integrated circuit including a plurality of areas formed on a first conductor layer and a first wiring layer formed on the first conductor layer, a first insulating layer laminated on the first wiring layer, and a second integrated circuit including a plurality of areas formed on a second conductor layer which is laminated on the first insulating layer, and a second wiring layer formed on the second conductor layer. The first integrated circuit and the second integrated circuit are connected electrically by interconnection penetrating in the laminating direction and at least one of bidirectional communication of data, control signal supply, and clock signal supply between the first integrated circuit and the second integrated circuit is carried out through the penetrating interconnection. | 02-25-2010 |
20100059368 | MAGNETRON SPUTTERING APPARATUS - Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet. | 03-11-2010 |
20100059820 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A thin-film transistor (TFT) has a gate insulating film excellent in transparency and flatness. The gate insulating film is formed by a transparent insulating film ( | 03-11-2010 |
20100059830 | Semiconductor device - In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10 | 03-11-2010 |
20100072519 | P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT - In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe. | 03-25-2010 |
20100096362 | PLASMA PROCESSING APPARATUS, POWER SUPPLY APPARATUS AND METHOD FOR OPERATING PLASMA PROCESSING APPARATUS - In a plasma processing apparatus 10, a microwave transmitted from a microwave source | 04-22-2010 |
20100101834 | INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM - An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable. | 04-29-2010 |
20100101945 | MAGNETRON SPUTTERING APPARATUS - In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. | 04-29-2010 |
20100119642 | RESIN MOLDING DEVICE - A resin molding device which molds a resin tube | 05-13-2010 |
20100126848 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly. | 05-27-2010 |
20100126852 | ROTARY MAGNET SPUTTERING APPARATUS - In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target. | 05-27-2010 |
20100139762 | COMPOUND-TYPE THIN FILM, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE USING THE SAME - An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas. | 06-10-2010 |
20100154833 | Resist film removing apparatus, resist film removing method, organic matter removing apparatus and organic matter removing method - A sheetfed resist removing apparatus having a substrate ( | 06-24-2010 |
20100166956 | VAPOR DEPOSITION APPARATUS - It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component. | 07-01-2010 |
20100173477 | Method of Manufacturing Semiconductor Device and Semiconductor Manufacturing Apparatus - A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H | 07-08-2010 |
20100183827 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus | 07-22-2010 |
20100193900 | SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE - A base is formed of a material, such as SiC, having mechanical characteristics higher than those of silicon for forming a semiconductor layer, and the base and the semiconductor layer are bonded through an insulating layer. After bonding, an SOI substrate is formed by mechanically separating the semiconductor layer from the base, and the separated semiconductor layer is reused for forming the subsequent SOI substrate. Thus, a large SOI substrate having a diameter of 400 mm or more, which has been difficult to obtain by conventional methods, can be obtained. | 08-05-2010 |
20100203713 | METHOD OF MANUFACTURING ELECTRONIC DEVICE - An object of this invention is to provide a method for manufacturing an electronic device wherein a conductor layer is uniformly formed on a substrate having a super large area. In the method for manufacturing the electronic device, a metal film for forming a gate electrode is selectively embedded in a transparent resin film formed on a substrate, and the metal film is formed by sputtering directly on the substrate at the gate electrode portion, and on an insulating coat film on portions other than the gate electrode portion. The metal film on the insulating coat film is removed by chemical liftoff with removal of the insulating coat film by etching. | 08-12-2010 |
20100213516 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction). | 08-26-2010 |
20100219564 | Resin Molding Apparatus and Resin Molding Process - Conventional production of plastic products not releasing harmful organic molecules requires a high injection or extrusion pressure in order to avoid heating of a resin to high temperature, resulting in use of a large-sized and heavy resin molding apparatus having high electric power consumption. The employment of a method of inhibiting oxidative decomposition and catalytic decomposition enables the formation of a molten plastic having an extremely low viscosity without decomposition or dissociation even at high temperature, whereby the molding of the resin can be conducted at a very low injection or extrusion pressure to attain the downsizing and weight saving of the resin molding apparatus. | 09-02-2010 |
20100221495 | Method of Manufacturing a Transparent Member and Plastic Member - A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved. | 09-02-2010 |
20100230387 | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method - Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate | 09-16-2010 |
20100231118 | CATHODE BODY AND FLUORESCENT TUBE USING THE SAME - An object of the present invention is to provide a cathode body having a high intensity, a high efficiency, and a long life. The cathode body of the present invention is manufactured by forming, on a cylindrical cup formed of a metal alloy containing lanthanum oxide and having a high thermal conductivity, a LaB | 09-16-2010 |
20100288439 | TOP PLATE AND PLASMA PROCESS APPARATUS EMPLOYING THE SAME - A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits. | 11-18-2010 |
20100326511 | SOLAR CELL WHEREIN SOLAR PHOTOVOLATIC THIN FILM IS DIRECTLY FORMED ON BASE - Disclosed is a solar cell comprising a solar cell semiconductor thin film formed on a base, a transparent conductive film formed on the semiconductor thin film, and a nitride-containing moisture diffusion-preventing film which covers the upper surface of the transparent conductive film. The moisture diffusion-preventing film is preferably composed of at least a silicon nitride film or a silicon carbide nitride (SiCN) film. | 12-30-2010 |
20100330390 | STRUCTURAL MEMBER TO BE USED IN APPARATUS FOR MANUFACTURING SEMICONDUCTOR OR FLAT DISPLAY, AND METHOD FOR PRODUCING THE SAME - A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film. | 12-30-2010 |
20110000533 | PHOTOELECTRIC CONVERSION ELEMENT STRUCTURE AND SOLAR CELL - It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor. | 01-06-2011 |
20110000783 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate | 01-06-2011 |
20110017501 | COMPOSITE MATERIAL AND MANUFACTURING METHOD THEREOF - This invention provides a composite material useful for size reduction of electronic components and circuit boards mounted on electronic equipment and exhibiting a low magnetic loss (tan δ), and a manufacturing method thereof. The composite material contains an insulating material and particulates dispersed in this insulating material, the particulates being previously coated with an insulating material having substantially the same composition as that of the coating insulating material. The particulates consist of an organic or inorganic substance and preferably have a flat shape. The insulating material may be an insulating material commonly used in the field of electronic components. The composite material of the invention is preferably manufactured by a manufacturing method in which the particulates are previously coated with an insulating material and dispersed in an insulating material having substantially the same composition as that of the coating insulating material. The composite material of the invention can be applied as a material for circuit boards and/or electronic components to realize further reduction in size and power consumption of information and telecommunication equipment in a frequency band of several hundred MHz to 1 GHz. | 01-27-2011 |
20110034037 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE - Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant. | 02-10-2011 |
20110041768 | HEAT EQUALIZER AND ORGANIC FILM FORMING APPARATUS - A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed. | 02-24-2011 |
20110042725 | SEMICONDUCTOR DEVICE - With inversion-mode transistors, intrinsic-mode transistors, or semiconductor-layer accumulation-layer current controlled accumulation-mode transistors, variation in threshold voltages becomes large in miniaturized generations due to statistical variation in impurity atom concentrations and thus it is difficult to maintain the reliability of an LSI. Provided is a bulk current controlled accumulation-mode transistor which is formed by controlling the thickness and the impurity atom concentration of a semiconductor layer so that the thickness of a depletion layer becomes greater than that of the semiconductor layer. For example, by setting the thickness of the semiconductor layer to 100 nm and setting the impurity concentration thereof to be higher than 2×10 | 02-24-2011 |
20110062460 | ORGANIC EL LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An organic EL light emitting element is provided with a conductive transparent electrode | 03-17-2011 |
20110073922 | CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed. | 03-31-2011 |
20110094781 | ELECTRONIC DEVICE HAVING A GLASS SUBSTRATE CONTAINING SODIUM AND METHOD OF MANUFACTURING THE SAME - An electronic device comprises a glass substrate ( | 04-28-2011 |
20110110052 | MULTILAYER WIRING BOARD - A multilayer wiring board | 05-12-2011 |
20110114375 | WIRING BOARD AND METHOD OF MANUFACTURING THE SAME - Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film. | 05-19-2011 |
20110120566 | DISCONTINUOUS SWITCHING FLUID FLOW RATE CONTROL METHOD USING PRESSURE TYPE FLOW RATE CONTROL DEVICE - A fluid flow rate control method is provided that uses a flow rate range variable type pressure type flow rate control device provided with at least two or more parallel fluid passages disposed between the downstream side of a control valve of the control device and a fluid supply pipe passage, and orifices having different fluid flow rate characteristics are respectively interposed in parallel fluid passages to pass fluid in a first flow rate region through one orifice for flow rate control, and to pass fluid in a second flow rate region through at least another orifice for flow rate control. Flow rate characteristics of the respective orifices are selected so that a maximum controllable flow rate of fluid in the first flow rate region at low flow rate is smaller than 10% of a maximum controllable flow rate in the second flow rate region at high flow rate. | 05-26-2011 |
20110121217 | SOLENOID VALVE - There is provided a solenoid valve that realizes space-saving by reducing the size of a dedicated driving power source. There is provided a solenoid valve capable of instantaneously opening and closing that includes an electric double layer capacitor having a low direct current internal resistance and a low equivalent series resistance as a motive power supply. The electric double layer capacitor has single-cell electrical properties including a capacitance of 1 to 5 F, a rated voltage of 21 to 2.7 V, a direct current internal resistance of 0.01 to 0.1 Ω, and an equivalent series resistance at 1 KHz of 0.03 to 0.09 Ω, and includes a polarizable electrode made of glassy carbon having a specific surface area of 1 to 500 m | 05-26-2011 |
20110127075 | INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME - An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH | 06-02-2011 |
20110139334 | BONDING METHOD AND RESIN MEMBER BONDED THEREBY - By performing thermal fusion bonding in the state where a bonding portion is covered with a bonding portion cover and the concentrations of oxygen and moisture inside the bonding portion cover are set lower than the concentrations of oxygen and moisture in the atmosphere, it is possible to reduce elution from a bonded resin-based pipe. | 06-16-2011 |
20110140276 | INTERLAYER INSULATING FILM, INTERCONNECTION STRUCTURE, AND METHODS OF MANUFACTURING THE SAME - This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF | 06-16-2011 |
20110146910 | PLASMA PROCESSING APPARATUS - Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode. | 06-23-2011 |
20110169390 | MAGNETRON, MAGNETRON CATHODE BODY MANUFACTURING METHOD, AND CATHODE BODY - It is an object of the present invention to obtain a cathode body capable of maintaining a long service life even when a high current flows therethrough. According to the present invention, it is possible to obtain a magnetron cathode body including, as a base material, a high-melting-point metal containing an electron emission material, and rare-earth boride coating a surface thereof. As the electron emission material and the high-melting-point metal, La | 07-14-2011 |
20110177355 | AL ALLOY MEMBER, ELECTRONIC DEVICE MANUFACTURING APPARATUS, AND METHOD OF MANUFACTURING AN ANODIC OXIDE FILM COATED AL ALLOY MEMBER - Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30. | 07-21-2011 |
20110180213 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container. | 07-28-2011 |
20110186425 | MAGNETRON SPUTTERING METHOD, AND MAGNETRON SPUTTERING APPARATUS - A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer. | 08-04-2011 |
20110189857 | CHEMICAL MECHANICAL POLISHING APPARATUS, CHEMICAL MECHANICAL POLISHING METHOD, AND CONTROL PROGRAM - Scratches and dishing are prevented from being generated when copper, which is deposited on an interlayer insulating film formed of an organic low-k film, is polished during a damascene process. In the CMP apparatus, while a rotating center axis of a rotating head, which has a polishing pad attached thereon, and a rotating center axis of a rotating table, which has a semiconductor wafer disposed face-up thereon, are aligned on the same vertical line, and the rotating head and the rotating table are spin-rotating in the same direction, the rotating head is lowered and the polishing pad touches the semiconductor wafer on the rotating table. Accordingly the polishing pad is prevented from scrubbing in a direction opposite to the rotating direction of the semiconductor wafer in the entire surface of the semiconductor wafer. | 08-04-2011 |
20110198219 | MAGNETRON SPUTTERING DEVICE - An object of the present invention is to improve a sputtering efficiency and a production efficiency in a magnetron sputtering method using a rectangular target. A magnetron sputtering apparatus | 08-18-2011 |
20110198702 | Contact Formation Method, Semiconductor Device Manufacturing Method, and Semiconductor Device - A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. | 08-18-2011 |
20110215384 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. | 09-08-2011 |
20110229618 | Brewed Liquid Filtering System, Brewed Liquid Filtering Method, and Brewed Liquid Manufacturing Method - An object of the present invention is to provide a brewed liquid filtering system which is capable of reducing a production cost and which has a structure suitable for cleaning of a filter. A brewed liquid filtering system | 09-22-2011 |
20110253208 | Photoelectric Conversion Element and Solar Cell - Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n | 10-20-2011 |
20110268870 | FILM FORMING APPARATUS AND FILM FORMING METHOD - In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel. | 11-03-2011 |
20110300422 | LIQUID SODIUM BATTERY - A liquid sodium battery in which two electrode members sandwiching a partition wall formed of a Na-ion conducting solid substance are constructed by a metal having a work function whose absolute value is smaller than that of a work function of sodium and a metal having a work function whose absolute value is greater than that of the work function of sodium. | 12-08-2011 |
20120031763 | ELECTRODIALYZER - An object of this invention is to provide an electrodialyzer which is effective in saving electric power. According to this invention, there is provided an electrodialyzer which electrically dialyzes water to be processed while a voltage causing substantially no current to flow is applied between an anode and a cathode. | 02-09-2012 |
20120037407 | Electronic Apparatus and Method of Manufacturing the Same - It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate. | 02-16-2012 |
20120074339 | REGULATING VALVE DEVICE - [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. | 03-29-2012 |
20120082596 | Reactor for Moisture Generation - A reactor for moisture generation generates high-purity moisture at a catalytic reaction temperature that is lower than an ignition point of hydrogen gas and oxygen gas so hydrogen and oxygen gas are supplied into the reactor having a platinum catalyst layer to catalyze the reaction of the gases without combustion, wherein the reactor maintains high adhesion strength for a long time of the platinum catalyst layer to a barrier layer provided between the base material and the platinum catalyst layer. The reactor includes a reactor main body that has a gas inlet and a moisture outlet, and the Y | 04-05-2012 |
20120111394 | PHOTOELECTRIC CONVERSION DEVICE - It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device | 05-10-2012 |
20120119216 | Semiconductor Device, Method of Manufacturing A Semiconductor Device, and Display Device - A semiconductor device comprises a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to a total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode. | 05-17-2012 |
20120146102 | TRANSISTOR AND SEMICONDUCTOR DEVICE - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 06-14-2012 |
20120208375 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H | 08-16-2012 |
20120234491 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing. | 09-20-2012 |
20120237684 | METHOD OF MANUFACTURING A TRANSPARENT MEMBER AND PLASTIC MEMBER - A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved. | 09-20-2012 |
20120247961 | METAL OXIDE FILM, LAMINATE, METAL MEMBER AND PROCESS FOR PRODUCING THE SAME - A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm | 10-04-2012 |
20120292743 | SURFACE TREATMENT METHOD FOR ATOMICALLY FLATTENING A SILICON WAFER AND HEAT TREATMENT APPARATUS - In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed. | 11-22-2012 |
20120308714 | REDUCED PRESSURE DEPOSITION APPARATUS AND REDUCED PRESSURE DEPOSITION METHOD - In a deposited thin film for use in a semiconductor device or the like, adsorption of contaminants is a problem. In the case in which a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with the case in which the gas pressure is maintained in a molecular flow region. The gas pressure is controlled so that it can be set in the molecular flow region when forming the deposited thin film, and set in the viscous flow region when such deposition is not being performed. Thus, the deposited thin film is formed with less contamination from the organic substances. | 12-06-2012 |
20120329284 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND METHOD FOR REDUCING MICROROUGHNESS OF SEMICONDUCTOR SURFACE - Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved. | 12-27-2012 |
20130000737 | METHOD FOR WATER HAMMERLESS OPENING OF FLUID PASSAGE, AND METHOD FOR SUPPLYING CHEMICAL SOLUTIONS AND DEVICE FOR WATER HAMMERLESS OPENING FOR WHICH THE METHOD IS USED - The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc. | 01-03-2013 |
20130017686 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality | 01-17-2013 |
20130031945 | METALWORKING MACHINE - A metalworking machine includes a tool for machining a workpiece metal and a cooling liquid supply unit for supplying a cooling liquid to a machining portion between the tool and the workpiece metal. The cooling liquid is formed by applying a degassing treatment that removes dissolved gases from the cooling liquid, and a hydrogenation treatment that adds hydrogen to the cooling liquid. | 02-07-2013 |
20130058823 | SCREW VACUUM PUMP - A screw vacuum pump includes a male rotor, a female rotor, a stator, and a drive motor/motors. A screw gear portion of the male rotor, a screw gear portion of the female rotor, and the stator cooperatively form a gas working chamber. The stator has an inlet port and an outlet port. At least one of the male rotor and the female rotor has a rotor hollow portion which is opened on at least one end face side in a rotation-axis longitudinal direction of the male rotor and/or the female rotor. The drive motor is at least partially received in the rotor hollow portion. | 03-07-2013 |
20130084059 | VAPORIZER - A vaporizer, capable of stabilizing the behavior of pressure inside the vaporizer, includes a chamber having an inlet and an outlet, a heating device that heats the inside of the chamber, a partition wall structure | 04-04-2013 |
20130118568 | PHOTOELECTRIC CONVERSION MEMBER - It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member | 05-16-2013 |
20130140700 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate. | 06-06-2013 |
20130154469 | CATHODE BODY, FLUORESCENT TUBE, AND METHOD OF MANUFACTURING A CATHODE BODY - Provided is a cathode body that comprises a cylindrical cup | 06-20-2013 |
20130187283 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CF | 07-25-2013 |
20130220451 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP | 08-29-2013 |
20130302918 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number). | 11-14-2013 |
20130307404 | VACUUM TUBE AND VACUUM TUBE MANUFACTURING APPARATUS AND METHOD - With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas. | 11-21-2013 |