Patent application number | Description | Published |
20120192995 | RECIPROCATING PENCIL SHARPENER - A reciprocating pencil sharpener has a stationary member, a cutter and a ratchet mechanism. The cutter includes a blade secured to a blade holder. The ratchet mechanism is mounted between the stationary member and the cutter and allows the cutter to rotate relative to the stationary member in one direction only. When a user desires to sharpen a pencil, the user can keep the pencil in the hand and rotate the pencil in reciprocating rotation, thus obtaining the sharpened point of the pencil. Consequently, it is convenient for the user to apply a rotational force and a high efficiency of sharpening operation is achieved. | 08-02-2012 |
20140000119 | ADJUSTABLE PENCIL SHARPENER | 01-02-2014 |
20150322704 | AUTOMATIC COVER-OPENING DEVICE - An automatic cover-opening device has a body, at least one cover panel and a recoil mechanism. The body has an insertion hole defined in the body. The at least one cover panel is mounted on the body and moveably closes the insertion hole. Each one of the at least one cover panel has a guiding segment having at least one guiding edge inclined relative to an axis of the insertion hole to guide an axial force along the axis of the insertion hole to a lateral direction non-parallel with the axis, so as to generate a lateral component force for opening the at least one cover panel. The recoil mechanism is disposed on the body to push the at least one cover panel to a closed position for closing the insertion hole. With such an arrangement, an automatic cover-opening device that can be applied for insertion of a rod-like object is provided. | 11-12-2015 |
20160068009 | RECIPROCATING PENCIL SHARPENER - A reciprocating pencil sharpener has a shavings receptacle, a stationary member, a cutter and a ratchet mechanism. The cutter includes a blade secured to a blade holder. The ratchet mechanism is mounted between the stationary member and the cutter and allows the cutter to rotate relative to the stationary member in one direction only. When a user desires to sharpen a pencil, the user can keep the pencil in the hand and rotate the pencil in reciprocating rotation, thus obtaining the sharpened point of the pencil. Consequently, it is convenient for the user to apply a rotational force and a high efficiency of sharpening operation is achieved. | 03-10-2016 |
Patent application number | Description | Published |
20140374879 | INTEGRATED CIRCUIT WITH BACKSIDE STRUCTURES TO REDUCE SUBSTRATE WRAP - Wafer bowing induced by deep trench capacitors is ameliorated by structures formed on the reverse side of the wafer. The structures on the reverse side include tensile films. The films can be formed within trenches on the back side of the wafer, which enhances their effect. In some embodiments, the wafers are used to form 3D-IC devices. In some embodiments, the 3D-IC device includes a high voltage or high power circuit. | 12-25-2014 |
20140374880 | DEEP TRENCH CAPACITOR - The present disclosure relates to a method of forming a capacitor structure, including depositing a plurality of first polysilicon (POLY) layers of uniform thickness separated by a plurality of oxide/nitride/oxide (ONO) layers over a bottom and sidewalls of a recess and substrate surface. A second POLY layer is deposited over the plurality of first POLY layers, is separated by an ONO layer, and fills a remainder of the recess. Portions of the second POLY layer and the second ONO layer are removed with a first chemical-mechanical polish (CMP). A portion of each of the plurality of first POLY layers and the first ONO layers on the surface which are not within a doped region of the capacitor structure are removed with a first pattern and etch process such that a top surface of each of the plurality of first POLY layers is exposed for contact formation. | 12-25-2014 |
20150054055 | Silicon Dot Formation by Self-Assembly Method and Selective Silicon Growth for Flash Memory - Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer. | 02-26-2015 |
20150054059 | Silicon Dot Formation by Direct Self-Assembly Method for Flash Memory - Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof. | 02-26-2015 |
20150069541 | Perpendicular Magnetic Random-Access Memory (MRAM) Formation by Direct Self-Assembly Method - Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask. | 03-12-2015 |
20150129951 | METHOD OF FORMING SEMICONDUCTOR STRUCTURE OF CONTROL GATE, AND SEMICONDUCTOR DEVICE - A method of forming a semiconductor structure of a control gate is provided, including depositing a first dielectric layer overlying a substrate, forming a surface modification layer from the first dielectric layer; and forming semiconductor dots on the surface modification layer. The surface modification layer has a bonding energy to the semiconductor dots less than the bonding energy between the first dielectric layer and the semiconductor dots. Therefore the semiconductor dots have higher density to form on the surface modification layer than that to directly form on the first dielectric layer. And a semiconductor device is also provided to tighten threshold voltage (Vt) and increase programming efficiency. | 05-14-2015 |
20150287737 | SILICON DOT FORMATION BY SELF-ASSEMBLY METHOD AND SELECTIVE SILICON GROWTH FOR FLASH MEMORY - Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements within a memory cell. A copolymer solution having first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material having a regular pattern of micro-domains of the second polymer species within a polymer matrix having the first polymer species. The second polymer species is then removed resulting with a pattern of holes within the polymer matrix. An etch is then performed through the holes utilizing the polymer matrix as a hard-mask to form a substantially identical pattern of holes in a dielectric layer disposed over a seed layer disposed over the substrate surface. Epitaxial deposition onto the seed layer then utilized to grow a substantially uniform pattern of discrete storage elements within the dielectric layer. | 10-08-2015 |
20150311300 | Uniformity Control for SI Dot Size in Flash Memory - Some embodiments of the present disclosure relate to a method for forming flash memory. In this method, a tunnel oxide is formed over a semiconductor substrate. A layer of silicon dot nucleates is formed on the tunnel oxide. The layer of silicon dots includes silicon dot nucleates having respective initial sizes which differ according to a first size distribution. An etching process is performed to reduce the initial sizes of the silicon dot nucleates so reduced-size silicon dot nucleates have respective reduced sizes which differ according to a second size distribution. The second size distribution has a smaller spread than the first size distribution. | 10-29-2015 |
20150371994 | WELL CONTROLLED CONDUCTIVE DOT SIZE IN FLASH MEMORY - Some embodiments of the present disclosure relate to a method for forming flash memory. In this method, a first tunnel oxide is formed over a semiconductor substrate. A self-assembled monolayer (SAM) is then formed on the first tunnel oxide. The SAM includes spherical or spherical-like crystalline silicon dots having respective diameters which are less than approximately 30 nm. A second tunnel oxide is then formed over the SAM. | 12-24-2015 |
20160035682 | INTEGRATED CIRCUIT WITH BACKSIDE STRUCTURES TO REDUCE SUBSTRATE WARP - Wafer bowing induced by deep trench capacitors is ameliorated by structures formed on the reverse side of the wafer. The structures on the reverse side include tensile films. The films can be formed within trenches on the back side of the wafer, which enhances their effect. In some embodiments, the wafers are used to form 3D-IC devices. In some embodiments, the 3D-IC device includes a high voltage or high power circuit. | 02-04-2016 |
20160087106 | E-FLASH CELL BAND ENGINEERING FOR ERASING SPEED ENHANCEMENT - The present disclosure relates to a structure and method for forming a flash memory cell with an improved erase speed and erase current. Si dots are used for charge trapping and an ONO sandwich structure is formed over the Si dots. Erase operation includes direct tunneling as well as FN tunneling which helps increase erase speed without compensating data retention. | 03-24-2016 |
20160118577 | PERPENDICULAR MAGNETIC RANDOM-ACCESS MEMORY (MRAM) FORMATION BY DIRECT SELF-ASSEMBLY METHOD - Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of magnetic random access memory (MRAM) cells with a minimum dimension below the lower resolution limit of some optical lithography techniques. A copolymer solution comprising first and second polymer species is spin-coated over a heterostructure which resides over a surface of a substrate. The heterostructure comprises first and second ferromagnetic layers which are separated by an insulating layer. The copolymer solution is subjected to self-assembly into a phase-separated material comprising a pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first polymer species is then removed, leaving a pattern of micro-domains of the second polymer species. A pattern of magnetic memory cells within the heterostructure is formed by etching through the heterostructure while utilizing the pattern of micro-domains as a hardmask. | 04-28-2016 |