Patent application number | Description | Published |
20090318108 | Acoustic surface wave filter module and method of manufacturing the same - In order to reduce the parts required for matching of an SAW filter module, the SAW filter module | 12-24-2009 |
20100007435 | Duplexer - To provide a duplexer which is small in size and excellent in separation characteristic of transmission/reception signals. An antenna port is disposed on a center of a rearward side in a disposition area of a duplexer, a high band side filter and a low band side filter are respectively disposed on a left side and a right side of the antenna port, a parallel arm at a last stage in the low band side filter, a parallel arm at a last stage in the high band side filter, a first signal port and a second signal port seen from the antenna port are positioned on a forward side of the antenna port, a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the low band side filter and a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the high band side filter are mutually connected via a conductive path formed on a piezoelectric substrate at a rearward side of the antenna port, and the parallel arms connected by the conductive path are positioned on the rearward side of the parallel arms at the last stages. Accordingly, a separation characteristic at a high band side is improved. | 01-14-2010 |
20100194488 | Receiving side filter of duplexer and duplexer - To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode. | 08-05-2010 |
20100225418 | Low band side filter of duplexer, high band side filter of duplexer, and duplexer - To improve an isolation characteristic in a pass frequency band of a high band side filter | 09-09-2010 |
20110080223 | Voltage controlled oscillator - There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip. The circuit components are selected according to an oscillation frequency. | 04-07-2011 |
20110080226 | Voltage controlled oscillator and electronic component - To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan δ) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part | 04-07-2011 |
20120062336 | Duplexer - Disclosed is a receiving side filter in a pass band of a duplexer's transmitting side filter. Output balancing is performed by the receiving side filter, which includes a longitudinal mode resonator type filter. A pass band of the receiving side filter is set on a lower band side than the pass band of the transmitting side filter. Between an antenna port and a pair of balanced reception ports, first and second ladder-type filters are provided. The first includes a series arm and a parallel arm, each formed of a SAW resonator and a longitudinal mode resonator type filter. The second ladder-type filter has series arms, formed of SAW resonators respectively provided in signal paths that connect the respective balanced reception ports and the longitudinal mode resonator type filter, and a parallel arm formed of a SAW resonator and connecting between these signal paths. | 03-15-2012 |
20120068790 | Elastic wave device - There is provided an elastic wave device that is capable of suppressing deterioration in flatness of a frequency characteristic in a pass frequency band yet has excellent ESD resistance. At positions apart from a crossing area of electrode fingers | 03-22-2012 |
Patent application number | Description | Published |
20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
20090047751 | METHOD OF FABRICATING SEMICONDUCTOR LASER - There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an In | 02-19-2009 |
20120003822 | Wafer Guide, MOCVD Equipment, and Nitride Semiconductor Growth Method - Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support ( | 01-05-2012 |
20130207076 | METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A group III nitride semiconductor light emitting device with a satisfactory ohmic contact is provided. The group III nitride semiconductor light emitting device includes a junction JC which tilts with respect to the reference plane that is orthogonal to a c-axis of a gallium nitride based semiconductor layer. An electrode forms the junction with the semipolar surface of the gallium nitride based semiconductor layer. The oxygen concentration of the grown gallium nitride based semiconductor layer that will form the junction JC is reduced. Since the electrode is in contact with the semipolar surface of the gallium nitride based semiconductor layer so as to form the junction, the metal-semiconductor junction has satisfactory ohmic characteristics. | 08-15-2013 |