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Susumu Yoshimoto

Susumu Yoshimoto, Sayama-Shi JP

Patent application numberDescriptionPublished
20090318108Acoustic surface wave filter module and method of manufacturing the same - In order to reduce the parts required for matching of an SAW filter module, the SAW filter module 12-24-2009
20100007435Duplexer - To provide a duplexer which is small in size and excellent in separation characteristic of transmission/reception signals. An antenna port is disposed on a center of a rearward side in a disposition area of a duplexer, a high band side filter and a low band side filter are respectively disposed on a left side and a right side of the antenna port, a parallel arm at a last stage in the low band side filter, a parallel arm at a last stage in the high band side filter, a first signal port and a second signal port seen from the antenna port are positioned on a forward side of the antenna port, a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the low band side filter and a ground side of a parallel arm on a front stage side of the parallel arm at the last stage in the high band side filter are mutually connected via a conductive path formed on a piezoelectric substrate at a rearward side of the antenna port, and the parallel arms connected by the conductive path are positioned on the rearward side of the parallel arms at the last stages. Accordingly, a separation characteristic at a high band side is improved.01-14-2010
20100194488Receiving side filter of duplexer and duplexer - To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.08-05-2010
20100225418Low band side filter of duplexer, high band side filter of duplexer, and duplexer - To improve an isolation characteristic in a pass frequency band of a high band side filter 09-09-2010
20110080223Voltage controlled oscillator - There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip. The circuit components are selected according to an oscillation frequency.04-07-2011
20110080226Voltage controlled oscillator and electronic component - To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan δ) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part 04-07-2011

Patent applications by Susumu Yoshimoto, Sayama-Shi JP

Susumu Yoshimoto, Saitama JP

Patent application numberDescriptionPublished
20110032051DUPLEXER - Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.02-10-2011

Susumu Yoshimoto, Itami-Shi JP

Patent application numberDescriptionPublished
20080210959Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.09-04-2008
20090047751METHOD OF FABRICATING SEMICONDUCTOR LASER - There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an In02-19-2009

Patent applications by Susumu Yoshimoto, Itami-Shi JP