Susumu Maeda
Susumu Maeda, Hadano-Shi JP
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20100038757 | SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEAT-TREATING THE SAME - A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T | 02-18-2010 |
20120139088 | SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER - A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region | 06-07-2012 |
20120184091 | METHOD FOR HEAT TREATING A SILICON WAFER - The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T | 07-19-2012 |
20130078588 | METHOD FOR HEAT-TREATING SILICON WAFER - A method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD density along a diameter of a bulk of the wafer grown by the CZ process can be improved. Further, a method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD size can also be improved and COP of a surface layer of the wafer can be reduced. The method includes a step of a first heat treatment in which the CZ silicon wafer is heated to a temperature from 1325 to 1400° C. in an oxidizing gas atmosphere, held at the temperature, and then cooled at a cooling rate of from 50 to 250° C./second, and a step of a second heat treatment in which the wafer is heated to a temperature from 900 to 1200° C. in a non-oxidizing gas atmosphere, held at the temperature, and then cooled. | 03-28-2013 |
20130175726 | METHOD FOR MANUFACTURING SILICON WAFER - A method for manufacturing a silicon wafer is provided in which a low-temperature thermal process for growing a thermal donor to be a precipitate nucleus of BMD is not needed, a defect-free layer is formed in a surface layer portion even in a short thermal processing time, a BMD density is increased in a bulk portion. A silicon single crystal having a predetermined oxygen concentration and a predetermined nitrogen concentration is grown by Czochralski method in which nitrogen is added in an inert gas atmosphere containing hydrogen gas, by controlling V/G to form a region where a vacancy-type point defect exists, a silicon wafer sliced from the silicon single crystal is subjected to a planarization process and a mirror polish process, and this wafer is subjected to an RTP in an oxidizing gas atmosphere at a maximum achievable temperature from 1250° C. to 1380° C. for 1 second to 60 seconds. | 07-11-2013 |
Susumu Maeda, Saitama JP
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20130333808 | NITRIDED STEEL MEMBER AND MANUFACTURING METHOD THEREOF - The present invention provides a nitrided steel member and manufacturing method thereof. the nitrided steel member including: an iron nitride compound layer formed on a surface of a steel member made of carbon steel for machine structural use or alloy steel for machine structural use, in which with regard to X-ray diffraction peak intensity IFe | 12-19-2013 |
20150053311 | NITRIDED STEEL MEMBER AND MANUFACTURING METHOD THEREOF - A nitrided steel member including an iron nitride compound layer formed on a surface of a steel member having predetermined components, wherein: in X-ray diffraction peak intensity IFe | 02-26-2015 |
Susumu Maeda, Utsunomiya-Shi JP
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20140034194 | STEEL FOR NITRIDING AND NITRIDED COMPONENT - A steel for nitriding having a chemical composition consisting of, by mass percent, C: 0.07-0.14%, Si: 0.10-0.30%, Mn: 0.4-1.0%, S: 0.005-0.030%, Cr: 1.0-1.5%, Mo: ≦0.05% (including 0%), Al: 0.010% or more to less than 0.10%, V: 0.10-0.25%, optionally at least one element selected from Cu: ≦0.30% and Ni: ≦0.25% [0.61Mn+1.11Cr+0.35Mo+0.47≦2.30], and the balance of Fe and impurities. P, N, Ti and O among the impurities are P: ≦0.030%, N: ≦0.008%, Ti: ≦0.005%, and O: ≦0.0030%. The steel is easily subjected to cutting before nitriding and suitable for use as an automobile ring gear. The nitrided component having a surface hardness of 650-900 HV, core hardness being ≧150 HV, and effective case depth of ≧0.15 mm has excellent bending fatigue strength and surface fatigue strength although the content of Mo is as low as ≦0.05% and has a small amount of expansion caused by nitriding. | 02-06-2014 |