Patent application number | Description | Published |
20090065814 | MOS device with schottky barrier controlling layer - A semiconductor device is formed on a semiconductor substrate. The semiconductor device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and the body into the drain, an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain form a Schottky diode, and a Schottky barrier controlling layer disposed in the epitaxial layer adjacent to the active region contact trench. | 03-12-2009 |
20090065855 | MOS device with integrated schottky diode in active region contact trench - A semiconductor device is formed on a semiconductor substrate. The device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface and a body bottom surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and at least part of the body into the drain, wherein the active region contact trench is shallower than the body bottom surface, and an active region contact electrode disposed within the active region contact trench. | 03-12-2009 |
20090065861 | MOS device with low injection diode - A semiconductor device is formed on a semiconductor substrate. The device includes a drain, an epitaxial layer overlaying the drain, and an active region. The active region includes a body disposed in the epitaxial layer, having a body top surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and into the body, an active region contact electrode disposed within the active region contact trench, wherein a thin layer of body region separating the active region contact electrode from the drain. | 03-12-2009 |
20120080751 | MOS DEVICE WITH VARYING CONTACT TRENCH LENGTHS - A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a first gate trench extending into the epitaxial layer; a first gate disposed in the first gate trench; an active region contact trench extending through the source and at least part of the body into the drain; an active region contact electrode disposed within the active region contact trench; a second gate trench extending into the epitaxial layer; a second gate disposed in the gate trench; a gate contact trench formed within the second gate; and a gate contact electrode disposed within the gate contact trench. | 04-05-2012 |
20130009242 | MOS DEVICE WITH LOW INJECTION DIODE - A semiconductor device is formed on a semiconductor substrate. The device includes: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and into the body; and an active region contact electrode disposed within the active region contact trench. A layer of body region separates the active region contact electrode from the epitaxial layer, and a low injection diode is formed below a body/drain junction. | 01-10-2013 |
20130203225 | FABRICATION OF MOS DEVICE WITH SCHOTTKY BARRIER CONTROLLING LAYER - Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into the drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench; and disposing a contact electrode within the active region contact trench. | 08-08-2013 |
20130280870 | FABRICATION OF MOS DEVICE WITH INTEGRATED SCHOTTKY DIODE IN ACTIVE REGION CONTACT TRENCH - Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer, having a body top surface and a body bottom surface; forming a source; forming an active region contact trench that extends through the source and the body into the drain, wherein bottom surface of the active region contact trench is formed to include at least a portion that is shallower than the body bottom surface; and disposing a contact electrode within the active region contact trench. | 10-24-2013 |
20140357030 | FABRICATION OF MOS DEVICE WITH SCHOTTKY BARRIER CONTROLLING LAYER - Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body; forming a source; forming an active region contact trench that extends through the source and the body into a drain; forming a Schottky barrier controlling layer in the epitaxial layer in bottom region of the active region contact trench; and disposing a contact electrode within the active region contact trench. The Schottky barrier controlling layer controls Schottky barrier height of a Schottky diode formed by the contact electrode and the drain. | 12-04-2014 |