Patent application number | Description | Published |
20100109645 | NANOSTRUCTURE SENSORS - Embodiments feature a sensor including a nanostructure and methods for manufacturing the same. In some embodiments, a sensor includes a substrate, a first electrode disposed on the substrate, and a second electrode disposed on the substrate. The second electrode is spaced apart from the first electrode and surrounding the first electrode. The sensor includes at least one nanostructure contacting the first electrode and the second electrode, in which the nanostructure is configured to vary an electrical characteristic according to an object to be sensed. | 05-06-2010 |
20130225445 | BIO-REACTION DEVICE CHIP - Provided is a bio-reaction device chip for confirming or detecting a biomaterial reaction, and more particularly, is a bio-reaction device chip, where a plurality of wells are formed in the plate to contain biomaterials to be tested, thereby simultaneously analyzing various targets, and the well is formed to have a structure of two or more steps such that the sample to be tested is contained in the lower well and a protective layer for protecting the sample, such as oil, is contained in the upper well, thereby preventing evaporation of the sample due to heating at the time of the biomaterial reaction, and thus, improving reliability in analysis. | 08-29-2013 |
20130225453 | BIOMATERIAL DETECTING DEVICE - Provided is a biomaterial detecting device for confirming or detecting a biomaterial reaction, and more particularly to a biomaterial detecting device, which is formed in a stick type to thereby be immersed in a tube containing a biomaterial solution to be tested; has an upper portion with a cap structure to thereby induce reaction with a biomaterial, and thus facilitate confirmation and detection of the biomaterial; and is formed in a cap structure to thereby prevent evaporation of a sample and infiltration of an external material at the time of a biomaterial reaction in the tube, and thus improve reliability in analysis. | 08-29-2013 |
20130242635 | SEMICONDUCTOR MEMORY DEVICE INCLUDING SENSING VERIFICATION UNIT - A semiconductor memory device includes a memory cell array configured to store data including a verification code; a sensing unit configured to sense the stored data including the verification code; and a verification unit configured to determine whether the sensing unit is able to sense the stored data based on a sensing condition, wherein the verification unit is configured to determine whether the sensing unit is able to sense the stored data based on the sensing condition and a value of the verification code sensed by the sensing unit. | 09-19-2013 |
20130258748 | FUSE DATA READING CIRCUIT HAVING MULTIPLE READING MODES AND RELATED DEVICES, SYSTEMS AND METHODS - A fuse data reading circuit is configured to read fuse data in multi-reading modes. The fuse data may be stored in a fuse array that includes a plurality of fuse cells configured to store fuse data. The fuse data reading circuit may include a sensing unit configured to sense the fuse data stored in the fuse cells of the fuse array, and a controller configured to control an operation of reading the fuse data stored in the fuse cells. The controller sets different sensing conditions for sensing the fuse data according to an operation period during the fuse data reading operation to read the fuse data. Methods include operations and use of the fuse data reading circuit. | 10-03-2013 |
20130265815 | METHOD OF READING DATA STORED IN FUSE DEVICE AND APPARATUSES USING THE SAME - A method for reading data stored in a fuse device included in a memory device including a memory cell array is provided. The method comprises reading trimming data of the fuse device, wherein the trimming data is related to trimming a level of voltage or a level of current used for an operation of the memory device; and after the reading the trimming data, reading defective cell address data of the fuse device, wherein the defective cell address data is related to defective cells in the memory cell array. | 10-10-2013 |
20130286759 | METHOD OF SELECTING ANTI-FUSES AND METHOD OF MONITORING ANTI-FUSES - For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled. | 10-31-2013 |
20130303390 | SYSTEM FOR INTEGRATED ANALYSIS OF REAL-TIME POLYMERASE CHAIN REACTION AND DNA CHIP AND METHOD FOR INTEGRATED ANALYSIS USING THE SAME - Provided are a system for integrated analysis of a real-time polymerase chain reaction and a DNA chip and a method for integrated analysis using the same, and more particularly to an apparatus for integrated analysis of a real-time polymerase chain reaction and a DNA chip and a method for integrated analysis using the same. According to the method for integrated analysis of a biomaterial of the present invention, gene amplification proceeds and subsequently hybridization proceeds in a single reactor, thereby preventing contamination of the sample due to external factors, which may be caused while the sample is transferred for reaction, and automating a series of procedures such as injection of the sample, reaction of the biomaterial, and detection and analysis of results. | 11-14-2013 |
20130322149 | MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE MEMORY DEVICE - A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively. | 12-05-2013 |
20140104921 | SEMICONDUCTOR MEMORY DEVICE HAVING OTP CELL ARRAY - Provided is a semiconductor memory device. The semiconductor includes a One Time Programmable (OTP) cell array, a converging circuit and a sense amplifier circuit. The OTP cell array includes a plurality of OTP cells connected to a plurality of bit lines, each bit line extending in a first direction. The converging includes a common node contacting a first bit line and a second bit line. The sense amplifier circuit includes a sense amplifier connected to the common node, the sense amplifier configured to amplify a signal of the common node. | 04-17-2014 |
20140219038 | DEVICES AND METHODS FOR DECIDING DATA READ START - A data read start decision device includes: a storing circuit configured to store code key data; a read check circuit configured to output a read start signal in response to code key data read from the storing circuit, and a controller configured to start reading environment setting data from the storing circuit in response to the read start signal. The read check circuit is configured to at least one of: receive the read start signal from the controller and transfer the read start signal to the controller in response to the read code key data; and generate the read start signal based on the read code key data and output the read start signal to the controller. | 08-07-2014 |
20140241085 | SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING DISABLE OPERATION USING ANTI-FUSE AND METHOD THEREOF - A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data. | 08-28-2014 |