Patent application number | Description | Published |
20110107592 | HOLDING MECHANISM FOR ELECTRICAL CONNECTORS AND PCBS - A holding mechanism has a holding component including a base and a covering plate. The covering plate has two supporting pegs at two ends of a bottom thereof fixed on a top surface of the base, for forming a receiving chamber where a plurality of electrical connectors, with PCBs inserted therein, is arranged side by side. A stopping plate is capable of being driven to insert into and withdraw from the receiving chamber from a frontward direction, for resting front ends of the electrical connectors. A locking component is capable of moving frontward and rearward, and has a main body disposed rearward of the base. The main body has an upper portion protruded frontward to form a locking portion, for resting rear ends of the PCBs, and a plurality of pressing elements extending frontward above and beyond the locking portion, for pressing exposed top surfaces of the inserted PCBs. | 05-12-2011 |
20110127240 | AUTOMATIC SOLDERING MACHINE - An automatic soldering machine includes a frame assembly, an electric iron and a movable module fixed on the frame assembly. The movable module is used for making the electric iron connected with the movable module randomly move to a specified position at a predetermined area. The movable module includes a first driving unit having a first leading element movable along a first axis, a second driving unit having a second leading element movable along a second axis perpendicular to the first axis, a third driving unit having a third leading element movable along a third axis perpendicular to the first and second axis and a rotating unit capable of rotating around an axis thereof. The third driving unit is connected with the first leading element. The second driving unit is connected with the third leading element. The rotating unit is connected with the second leading element. | 06-02-2011 |
20110168526 | AUTOMATIC CONVEY DEVICE - An automatic convey device adapted for pushing and grouping a plurality of connectors includes a frame assembly, a holding module and a feeding module disposed on the frame assembly respectively. The holding module has a plurality of positioning units for positioning the connectors. The feeding module includes a power unit, a sliding unit disposed on the frame assembly, a plurality of pushing units and a grouping unit mounted to the sliding unit respectively. The pushing units are capable of repeatedly pushing the respective connectors move forward until the connectors are positioned by the positioning units and then move backward for repeating the last action to push the next connectors forward. The grouping unit is capable of repeating the action of pushing forward the connector positioned by the forward positioning unit and capable of being controlled by the power unit to disconnect with or connect with and push the corresponding connectors. | 07-14-2011 |
Patent application number | Description | Published |
20090109034 | Radio frequency identification tag device for metallic products - A radio frequency identification tag device includes an antenna unit including a dielectric substrate that has two through holes extending from a first surface to a second surface opposite to the first surface, a first conductive layer disposed over the first surface of the dielectric substrate, a second conductive layer unit disposed over the second surface of the dielectric substrate and having opposite second conductive layers spaced apart from each other such that a spacer is formed between the second conductive layers, and two connecting conductors each disposed in a corresponding through hole in the dielectric substrate and interconnecting electrically a corresponding second conductive layer and the first conductive layer. A radio frequency identification module is disposed to span the spacer and is attached to the second conductive layer unit. | 04-30-2009 |
20120228388 | ANTI-COUNTERFEITING BOTTLE - An anti-counterfeiting bottle includes a metal cap, a bottle body and a RFID (Radio-Frequency Identification) tag. The RFID tag includes a grounded surface, a monopole antenna and a RFID chip. The grounded surface is attached to the bottle body. The monopole antenna is attached to the bottle and is electrically connected to the grounded surface. The RFID chip is attached to the bottle and is electrically connected to the monopole antenna and the grounded surface respectively, wherein the RFID chip, the monopole antenna and the grounded surface form a loop structure. When the RFID tag is torn up, the loop structure is destroyed as well, such that the RFID tag cannot be read anymore, thus achieving the anti-counterfeiting function. | 09-13-2012 |
20120268251 | WIRELESS IDENTIFICATION TAG HAVING CIRCULARLY POLARIZED PLANAR ANTENNA - A wireless identification tag having circular polarization planar antenna is disclosed. The wireless identification tag includes a conductive substrate and a wireless identification device. The conductive substrate includes a first slot portion, a second slot portion, and a third slot portion. The first slot portion, the second slot portion, and the third slot portion pass through the conductive substrate. The first slot portion and the second slot portion stretch in a first direction and a second direction, respectively. The angle between the first direction and the second direction is between 45 degrees and 135 degrees. The third slot portion is connected between the first slot portion and the second slot portion. The wireless identification device is disposed in the first slot portion or the second slot portion. The wireless identification device is used to transmit or receive an electric wave. | 10-25-2012 |
Patent application number | Description | Published |
20130095027 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm. | 04-18-2013 |
20130095028 | CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds. | 04-18-2013 |
20130136918 | CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm. | 05-30-2013 |
20140127496 | CRYSTALLINE SILICON INGOT INCLUDING NUCLEATION PROMOTION LAYER AND METHOD OF FABRICATING THE SAME - A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm. | 05-08-2014 |
20140186631 | SEED USED FOR CRYSTALLINE SILICON INGOT CASTING - The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone. | 07-03-2014 |