Patent application number | Description | Published |
20080211385 | ORGANIC ELECTRO-LUMINESCENT DISPLAY - Provided is an organic electro-luminescent display (OELD). The OELD includes: a plurality of unit pixels having an organic light emitting unit and a driving unit for driving the organic light emitting unit; and a substrate supporting the unit pixels, wherein the substrate has a non-planar portion corresponding to the light emitting unit and increasing a surface area, and the light emitting unit has a non-planar cross-sectional shape corresponding to the non-planar portion. The OELD has a concave portion or a convex portion for enlarging a surface such that the substantial area of an organic light emitting material increases. Thus, an effective light emission area increases in a pixel having a limited area and light emission of desired high brightness can be performed by a low driving voltage. A reduction in a driving voltage causes improvement in the durability of a pixel and the life span of the OELD is enlarged. | 09-04-2008 |
20080318084 | White organic light emitting device and display apparatus - A white organic light emitting device and a display apparatus and a lighting apparatus including the same. The white organic light emitting device include an anode, a hole transporting layer, a light emitting layer, an electron transporting layer, a cathode, and at least one color stabilizing layer between the light emitting layer and the electron transporting layer. | 12-25-2008 |
20090026929 | White organic light emitting device - A white organic light emitting device (OLED) includes an anode and a cathode spaced apart from each other; a blue light emitting layer, a green light emitting layer, and a red light emitting layer sequentially formed between the anode and the cathode; a first buffer layer formed between the blue light emitting layer and the green light emitting layer, and having a HOMO (highest occupied molecular orbital)-LOMO (lowest occupied molecular orbital) energy gap higher than or equal to that of the adjacent light emitting layers; and a second buffer layer formed between the green light emitting layer and the red light emitting layer, and having a LOMO energy level higher than that of the red light emitting layer. | 01-29-2009 |
20090072720 | White organic light emitting device and display apparatus and lighting apparatus comprising the same - Provided is a white organic light emitting device and a display apparatus and a lighting apparatus that include the white organic light emitting device. The white organic light emitting device comprises an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode. The light emitting layer includes a red light emitting layer, a blue light emitting layer, and a green light emitting layer sequentially formed from the anode. A functional layer, which blocks an energy transfer and controls electron mobility between the light emitting layers, is formed between the red light emitting layer and the blue light emitting layer or between the blue light emitting layer and the green light emitting layer. The functional layer formed between the red light emitting layer and the blue light emitting layer has a thickness of 50 to 100 Å. | 03-19-2009 |
20090090904 | Organic semiconductor device - Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are doped with extrinsic impurities. When either a reverse-bias voltage or a forward-bias voltage is applied, the organic tunneling p-n junction diode is turned off within a predetermined voltage range and has exponential voltage-current characteristics outside the predetermined voltage range. | 04-09-2009 |
20090091248 | White organic light emitting device - A white organic light emitting device (OLED) includes a pair of independent electrodes, a common electrode positioned between the independent electrodes, and a pair of white emission units respectively positioned at both sides of the common electrode in a mirror symmetry and emitting white light. | 04-09-2009 |
20090096358 | White organic light emitting device and color display apparatus employing the same - A top emission type white organic light emitting device (OLED) has a high resolution and a wide color gamut, and a color display apparatus uses the same. The white OLED includes a substrate; a reflective electrode formed on the substrate; an organic light emitting layer formed on the reflective electrode; a semi-transparent electrode formed on the organic light emitting layer; and in the white OLED, a wavelength of a resonating mode determined by an optical thickness between the reflective electrode and semi-transparent electrode is shorter than a shortest wavelength in a visible light region of a white light spectrum generated in the organic light emitting layer. | 04-16-2009 |
20090096359 | White organic light emitting device and color display apparatus employing the same - An organic light emitting device (OLED) having increased light output efficiency and a wide color gamut, and a color display apparatus employing the OLED, includes: a substrate; a reflective electrode formed on the substrate; an organic light emitting layer formed on the reflective electrode; a semi-transparent or transparent electrode formed on the organic light emitting layer; and an optical path control layer formed on the semi-transparent or transparent electrode and formed of a light transmitting material. In the OLED, resonators are formed between the reflective electrode and the semi-transparent or transparent electrode, between the reflective electrode and the top surface of the optical path control layer, and between the top surface of the semi-transparent or transparent electrode and the top surface of the optical path control layer, respectively, therefore, as an optical mode output to the exterior of the optical path control layer, at least two multiple resonances are generated. | 04-16-2009 |
20090102362 | Organic light emitting device and color display apparatus using the same - A top-emitting or bottom-emitting OLED has a wide color gamut and reduces a variation in color with a viewing angle. The OLED includes a reflective electrode and a transmissive or semi-transmissive electrode disposed opposite each other; at least two organic emission layers (EMLs) interposed between the reflective electrode and the transmissive or semi-transmissive electrode; and an optical path control layer disposed on an outer surface of the transmissive or semi-transmissive electrode. A resonator is formed between the reflective electrode and the optical path control layer so a resonance mode of light extracted from the optical path control layer is a multi-resonance mode having at least two modes in a visible light region. A distance between the organic EMLs satisfies the condition of constructive interference between light beams emitted by the respective organic EMLs. A color display apparatus using the OLED are taught. | 04-23-2009 |
20090115319 | White organic light emitting device - Provided is a white organic light emitting device (OLED). The white OLED includes a double cavity structure in which a first region and a second region are defined based on a transparent common electrode using a top emission method. A green phosphorescence or fluorescence emission layer is disposed in the first region, a blue fluorescence emission layer is disposed in the second region, a red emission layer is optionally disposed in the first region or the second region, and an optical path control layer (OPCL) for widening color gamut is disposed in a region in which green light and blue light are emitted so that color coordinates are not greatly changed due to a change in thickness of the OPCL and white light having good quality is obtained. | 05-07-2009 |
20090230871 | Organic light emitting display device and method of driving the same - Provided are an organic light emitting display device coupled to a photoelectric transistor. The organic light emitting display device includes an anode and a cathode separated from each other, a plurality of organic material layers formed between the anode and the cathode and including an organic light emitting layer, a light source applying an excitation pulse to the organic material layers, and a light receiving unit measuring changes in photoluminescence (PL) signals that are emitted from the organic material layers. | 09-17-2009 |
20090236983 | METHOD FOR PREPARING MULTILAYER OF NANOCRYSTALS, AND ORGANIC-INORGANIC HYBRID ELECTROLUMINESCENCE DEVICE COMPRISING MULTILAYER OF NANOCRYSTALS PREPARED BY THE METHOD - A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer. | 09-24-2009 |
20090267050 | METHOD OF PREPARING CADMIUM SULFIDE NANOCRYSTALS EMITTING LIGHT AT MULTIPLE WAVELENGTHS, AND CADMIUM SULFIDE NANOCRYSTALS PREPARED BY THE METHOD - A cadmium sulfide nanocrystal, wherein the cadmium sulfide nanocrystal shows maximum luminescence peaks at two or more wavelengths and most of the atoms constituting the nanocrystal are present at the surface of the nanocrystal to form defects. | 10-29-2009 |
20100173434 | NANOCRYSTAL ELECTROLUMINESCENCE DEVICE AND FABRICATION METHOD THEREOF - A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device. | 07-08-2010 |
20110254077 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a plurality of gate structures disposed on a substrate. Respective gate structures may include a lower control gate layer and an upper control gate layer. The upper control gate layer may be disposed on the lower control gate layer and may include a different material from the lower control gate layer. The semiconductor device may further include insulation patterned layers disposed in gap regions defined between the gate structures adjacent to each other. Upper surfaces of the insulation patterned layers may be lower than an upper surface of the lower control gate layer. | 10-20-2011 |
20110287566 | METHOD FOR FABRICATING AN ELECTROLUMINESCENCE DEVICE - A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further included is a method for fabricating the nanocrystal electroluminescence device. | 11-24-2011 |
20120174126 | DISC TRAY AND A DISC DRIVE USING THE SAME - A disc drive including a tray, a housing configured to receive the tray, a pickup device installed on the tray, and a spindle motor including a rotator having built therein a permanent magnet, a stator including a magnetic coil, and a rotation axis supporting portion that is configured to support a rotation axis of the rotator and fixed to the tray. | 07-05-2012 |
20120174129 | OPTICAL DISC DRIVE - An optical disc drive including a housing, a tray that is installed in the housing and that is configured to receive an optical disc, which has a spoke region on a surface thereof, an optical pickup unit which is attached to the tray, a main circuit board which is installed on the tray and is operatively connected to the optical pickup unit, and a spoke sensor which is arranged on the main circuit board and corresponds to the spoke region of the optical disk. | 07-05-2012 |
20120174133 | DISK DRIVE - A disk drive that includes (i) a main chassis, (ii) a tray that is configured to have a disk removably mounted thereon and that is installed to slide into/out of the main chassis, and that includes a pickup transporting unit configured to move a pickup base back and forth in a radial direction of the disk, and (iii) a lock releasing unit that is arranged on the tray, that is driven by the pickup transporting unit, and that releases a lock of the tray from the main chassis. | 07-05-2012 |
20120174134 | DISK DRIVE HAVING A TRAY LOCK RELEASING UNIT AND A METHOD OF RELEASING A TRAY LOCK USING THE TRAY LOCK RELEASING UNIT - A disk drive including a main chassis; a tray on which a disk is to be removably mounted, the tray being installed to slide into/out of the main chassis, and including a pickup transporting unit that is configured to move a pickup base back and forth in a straight line in a radial direction of the disk. The pickup base includes an optical pickup installed thereon, The disk drive also includes a lock releasing unit that is arranged on the tray, is driven by receiving a driving force of the pickup transporting unit, and releases lock of the tray from the main chassis. The disk drive drives a lock releasing unit by using driving force of a pickup transporting unit. | 07-05-2012 |
20120211818 | SEMICONDUCTOR DEVICES - In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness. | 08-23-2012 |
20120225542 | METHOD FOR PREPARING MULTILAYER OF NANOCRYSTALS, AND ORGANIC-INORGANIC HYBRID ELECTROLUMINESCENCE DEVICE COMPRISING MULTILAYER OF NANOCRYSTALS PREPARED BY THE METHOD - A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. | 09-06-2012 |
20120267616 | METHOD FOR PREPARING MULTILAYER OF NANOCRYSTALS, AND ORGANIC-INORGANIC HYBRID ELECTROLUMINESCENCE DEVICE COMPRISING MULTILAYER OF NANOCRYSTALS PREPARED BY THE METHOD - Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. | 10-25-2012 |
20130011635 | PHOTOSENSITIVE SEMICONDUCTOR NANOCRYSTALS, PHOTOSENSITIVE COMPOSITION COMPRISING SEMICONDUCTOR NANOCRYSTALS AND METHOD FOR FORMING SEMICONDUCTOR NANOCRYSTAL PATTERN USING THE SAME - An organic-inorganic hybrid electroluminescent device having a semiconductor nanocrystal pattern prepared by producing a semiconductor nanocrystal film using semiconductor nanocrystals, where the nanocrystal is surface-coordinated with a compound containing a photosensitive functional group, exposing the film through a mask and developing the exposed film | 01-10-2013 |
20130181278 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE DEVICE - Provided is a non-volatile memory device that includes a substrate including a plurality of active regions extending in a first direction and a plurality of element isolation trenches disposed between the active regions, a plurality of tunnel insulating layer patterns and a plurality of storage layer patterns sequentially disposed on the substrate, a plurality of blocking insulating layers and a plurality of gate electrodes disposed on the storage layer patterns and extending in a second direction perpendicular to the first direction, and first insulating layers including air gaps disposed between the active regions on the element isolation trenches and extending in the first direction, wherein the active regions include first active regions and second active regions adjacent to the first active regions, wherein a width of first air gaps is different from a width of second air gaps. | 07-18-2013 |
20150028458 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer. | 01-29-2015 |
20150061088 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer. | 03-05-2015 |
20150069517 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer. | 03-12-2015 |