Patent application number | Description | Published |
20100269951 | WIRE STRETCHING DEVICE - A wire stretching device for applying a drag force onto a wire wound around an object is provided. The wire stretching device comprises a primary platform, a first sub-platform, a second sub-platform and a driving device. The primary platform comprises a plate, a fixed stick and a track, wherein the fixed stick and the track are disposed on a surface of the plate, and the fixed stick has a first fixing device for fixing a first end of the wire. The object is fixed on a first stage of the first sub-platform, and a second fixing device is disposed on a second stage of the second sub-platform for fixing the second end of the wire. The second sub-platform is moved by the driving device for adjusting the tension of the wire. The first sub-platform is passively moved along the track corresponding to the tension of the wire. | 10-28-2010 |
20100271316 | Touch-Sensitive Display Panel - A touch-sensitive display panel including a first substrate, a second substrate, a display layer and at least one touch-sensitive device is provided. The second substrate is disposed opposite to the first substrate. The display layer is disposed between the first substrate and the second substrate. The touch-sensitive device is disposed between the first substrate and the second substrate and located beside the display layer. The displaying brightness of the touch-sensitive display panel is not adversely affected by the touch-sensitive device. In addition, the thickness of the touch-sensitive display panel is relative small. | 10-28-2010 |
20110007379 | MEMS Array Substrate and Display Device Using the same - A micro electromechanical system (MEMS) array substrate includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of MEMS switches and a plurality of pixel electrodes. The first signal lines are disposed on the substrate in parallel with one another as well as the second signal lines. The second signal lines intersect with the first signal lines, such that a plurality of pixel regions is defined on the substrate. Each MEMS switch is located at corresponding one of the intersections between the first signal lines and the second signal lines. Each pixel electrode is configured in corresponding one of the pixel regions and electrically connected with the corresponding MEMS switch Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved. In addition, a display device using the MEMS array substrate is also provided. | 01-13-2011 |
20110062863 | Front Light Plate - A front light plate includes a transparent substrate, a first electrode layer disposed on the transparent substrate and including first electrodes arranged in parallel, a second electrode layer disposed opposite to the first electrode layer and including second electrodes arranged in parallel, and light emitting components. The light emitting components arranged in array are disposed between the first electrode layer and the second electrode layer and at overlapping positions of the first electrodes and the second electrodes. Each of the light emitting components has a top surface connected to the corresponding first electrode, a bottom surface connected to the corresponding second electrode and a side surface between the top surface and the bottom surface. The side surface is a light emitting surface. The front light plate has high brightness uniformity and high light utility efficiency. | 03-17-2011 |
20110242014 | DISPLAY PANEL - A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force. | 10-06-2011 |
20110297519 | MEMS SWITCH - A micro electro-mechanical system (MEMS) switch includes an active device, an immovable metal layer and a movable metal layer is provided. The immovable metal layer is disposed on the active device and the movable metal layer is disposed above the immovable metal layer. Accordingly, an insulating cavity is formed between the immovable metal layer and the movable metal layer. Further, the active device is capable of driving the movable metal layer. Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved. | 12-08-2011 |
20110304593 | PIXEL DRIVING CIRCUIT, PIXEL DRIVING METHOD AND LIGHT EMITTING DISPLAY DEVICE - A pixel driving circuit, a pixel driving method and a light emitting display device are provided in the present invention. The pixel driving circuit includes first through fifth transistors and a capacitor and is for driving a light emitting diode. The third transistor forms a diode connection to make information of the threshold voltages of both the third transistor and the light emitting diode be stored in the capacitor in a data writing period. In a light emitting period, the second transistor compensates drift variation of the threshold voltages of the third transistor and the light emitting diode according to the information stored in the capacitor to provide a stable driving current for driving the light emitting diode. | 12-15-2011 |
20120168428 | ELECTROTHERMAL TRANSFER DEVICE AND ELECTROTHERMAL TRANSFER METHOD - An electrothermal transfer device includes a substrate, a plurality of electrothermal components and a heating circuit. The electrothermal components are disposed on a surface of the substrate and arranged in a pattern. The heating circuit is electrically connected to the electrothermal components. In an electrothermal transfer method, at first, a transfer substrate is disposed on a workpiece substrate. Then, the electrothermal transfer device is disposed on the transfer substrate so that the electrothermal components contact with the transfer substrate. Thereafter, the heating circuit is used to heat the electrothermal transfer components so that the transfer substrate is heated to be transferred to the workpiece substrate. The electrothermal transfer device and the electrothermal transfer method can reduce cost. | 07-05-2012 |
20130099220 | Transistor Structure - A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector. | 04-25-2013 |
Patent application number | Description | Published |
20100308444 | Method of Manufacturing an Electronic Device - In order to protect IMD layers, particularly low-k dielectrics, a protection film is formed on the sidewall of an opening in the IMD layers prior to etching a trench in the underlying silicon substrate. After etching the trench, such as through a TMAH wet etch, at least part of the protection film can be removed. The protection film can be removed in an anisotropic etch process such that a portion of the protection film remains as a sidewall spacer on the sidewall of the opening within the IMD layers. | 12-09-2010 |
20120280358 | INTEGRATED CIRCUITS INCLUDING METAL-INSULATOR-METAL CAPACITORS AND METHODS OF FORMING THE SAME - An integrated circuit includes a substrate and a first metal-insulator-metal (MIM) capacitor disposed over the substrate. The MIM capacitor includes a first metallic capacitor plate disposed over the substrate. At least one first insulator layer is disposed over the first metallic capacitor plate. A second metallic capacitor plate is disposed over the at least one first insulator layer. At least one first dielectric layer is disposed over the substrate. At least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer. | 11-08-2012 |
20120319239 | SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME - A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A first etch stop layer is disposed over the TSV structure. A first dielectric layer is disposed in contact with the first etch stop layer. A first conductive structure is disposed through the first etch stop layer and the first dielectric layer. The first conductive structure is electrically coupled with the TSV structure. The TSV structure is substantially wider than the first conductive structure. A second etch stop layer is disposed in contact with the first dielectric layer. A metal-insulator-metal (MIM) capacitor structure is disposed in contact with the second etch stop layer. | 12-20-2012 |
20140015101 | SEMICONDUCTOR STRUCTURES HAVING A METAL-INSULATOR-METAL CAPACITOR STRUCTURE - A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A metal-insulator-metal (MIM) capacitor structure is disposed over the substrate. A dual damascene structure disposed over and electrically coupled with the TSV structure, wherein the dual damascene structure includes a via portion and a trench portion A first dielectric layer is disposed around the via portion of the dual damascene structure. A second dielectric layer disposed around the trench portion of the dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure. | 01-16-2014 |
20140017873 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES - A method of forming a semiconductor structure includes forming a through-substrate-via (TSV) structure in a substrate. The method includes forming a first etch stop layer over the TSV structure. The method further includes forming a first dielectric layer in contact with the first etch stop layer. The method still further includes forming a second etch stop layer in contact with the first dielectric layer. The method also includes forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer. The method further includes forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure. | 01-16-2014 |
20150061118 | Three-Dimensional Chip Stack and Method of Forming the Same - A three-dimensional chip stack includes a first chip bonded to a second chip to form a bonded interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region. | 03-05-2015 |
Patent application number | Description | Published |
20100110036 | SENSING STRUCTURE AND DISPLAYER COMPRISING THE SAME - A sensing structure and a displayer comprising the same are provided. The displayer further comprises a substrate and a panel disposed opposite to the substrate. The sensing structure comprises a plurality of sensing elements, a conductive assembly, and a process module. Each of the sensing elements has a position data corresponding to the panel. Every several adjacent ones of the sensing elements form a plurality of sensing areas. The process module is electrically connected to the sensing elements via the conductive assembly. Each of the sensing elements generates a touch voltage in response to a touch on the sensing areas. The process module receives the touch voltages, and calculates a touch position of the one touch corresponding to the panel according to the position data and the touch voltages. | 05-06-2010 |
20120030111 | SERVICE PLATFORM UTILIZING AN ELECTRONIC PAPER DEVICE FOR FINANCIAL INSTITUTIONS - A service platform utilizing an electronic paper device for financial institutions, comprising: an option input device, used for sensing an entry operation and outputting a financial business option signal accordingly; a control unit, having an option input interface, a display interface, a host interface, and a slips storage unit, wherein the option input interface is used to receive the financial business option signal, the host interface is used to communicate with a financial institution host, the slips storage unit is used to store financial business slips; and an electronic paper device, having a touch input function, coupled to the display interface to display one financial business slip for related information input by a touch pen, or transmit the related information through the control unit to the financial institution host, or display an informing message sent from the financial institution host through the control unit. | 02-02-2012 |
20120169645 | SENSING STRUCTURE AND DISPLAYER COMPRISING THE SAME - A sensing structure and a displayer comprising the same are provided. The displayer further comprises a substrate and a panel disposed opposite to the substrate. The sensing structure comprises a plurality of sensing elements, a conductive assembly, and a process module. Each of the sensing elements has a position data corresponding to the panel. Every several adjacent ones of the sensing elements form a plurality of sensing areas. The process module is electrically connected to the sensing elements via the conductive assembly. Each of the sensing elements generates a touch voltage in response to a touch on the sensing areas. The process module receives the touch voltages, and calculates a touch position of the one touch corresponding to the panel according to the position data and the touch voltages. | 07-05-2012 |
Patent application number | Description | Published |
20110187765 | DRIVING MEMBERAND DRIVING MEMBER ARRAY MODULE - An exemplary driving member and an exemplary array module formed by a plurality of the driving members are disclosed in the invention. The driving member includes a first suspending beam module, a second suspending beam module and a conductive suspending beam module. When a voltage is provided between the first suspending beam module and the second suspending beam module, or the first suspending beam module and the second suspending beam module are provided with two homopolar voltages, when the electric field force is larger than the deforming force threshold of the first suspending beam, the first suspending beam moves to contact with the conductive suspending beam module, so that the first suspending beam has a voltage same with the conductive suspending beam module. When the electric field force is smaller than the deforming force threshold of the first suspending beam, the first suspending beam module rebounds to an original state. | 08-04-2011 |
20110233537 | OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film. | 09-29-2011 |
20110267306 | ELECTRONIC READING APPARATUS AND THE NOTE RECORDING METHOD THEREOF - An electronic reading apparatus includes a cover, a writing portion and a displaying portion. The cover defines a first side and a second side. The writing portion is arranged at the first side of the cover, and includes a touch input device and a writing unit. The writing unit is configured to create a content of a note by receiving inputs for the content of the note, and the touch input device detects a touch signal for generating an electronic note file in accordance with the touch signal. The displaying portion is arranged at the second side of the cover; and includes a first display unit for displaying a first content. | 11-03-2011 |
20110278563 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current. | 11-17-2011 |
20110296530 | ELECTRONIC READING APPARATUS AND THE DATA SECURITY METHOD THEREOF - Present invention relates to an electronic reading apparatus with data security and anti-theft functions. The electronic reader apparatus has a code input unit for receiving a security code, and a code determining unit for determining an authenticity of the security code. When no security code, no authentic security code or even no operational signal has been received during the predetermined periods of time, a central control unit may stop a power supply unit from outputting power in order to turn off the electronic reader apparatus and clear the image shown on a display unit. As such, a content of sensitive or confidential data stored in the electronic reading apparatus may not be intruded. | 12-01-2011 |
20120068172 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device. | 03-22-2012 |
20120138919 | PHOTO SENSING UNIT AND PHOTO SENSOR THEREOF - A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor. | 06-07-2012 |
20120314275 | ELECTROPHORESIS DISPLAY APPARATUS - An electrophoresis display apparatus includes an electronic-ink (E-Ink) layer, a passive-matrix substrate, and a conducting layer. The passive-matrix substrate has an electrode surface, and the electrode surface has a plurality of electrodes. The conducting layer has a predetermined shape. The conducting layer is disposed between the electronic-ink layer and the electrode surface of the passive-matrix substrate and is used for transmitting the signals on the electrodes contacting the conducting layer to the electronic-ink layer, so that the electronic-ink layer can display an image with the predetermined shape. | 12-13-2012 |
20130002530 | SEGMENT DISPLAY DEVICE - A segment display device includes an e-paper segmented display module, a first circuit module and a second circuit module. The e-paper segmented display module includes a group of first contacts. The first circuit module includes a first substrate, a first control unit, a group of second contacts and a group of third contacts. The first control unit, the second contacts and the third contacts are disposed on the first substrate. The first control unit is electrically connected with the second contacts and the third contacts. The second contacts are electrically connected to the first contacts. The second circuit module includes a second substrate, a second control unit and a group of fourth contacts. The second control unit and the fourth contact group are electrically connected with each other and both are disposed on the second substrate. The fourth contacts are electrically connected to the third contacts. | 01-03-2013 |
Patent application number | Description | Published |
20120061650 | Transistor Structure - A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector. | 03-15-2012 |
20120075689 | ELECTRONIC PAPER STRUCTURE AND METHOD FOR FABRICATING ELECTRONIC PAPER - An electronic paper structure is disclosed, which includes a hard substrate, a flexible substrate, at least one magnetic device for fastening the flexible substrate on the hard substrate temporally, a drive substrate formed on the flexible substrate, an electronic paper display layer formed on the drive substrate, and a protect layer formed on the electronic paper display layer. An electronic paper fabricating method using the same is also disclosed. | 03-29-2012 |
20120135588 | METHOD FOR PATTERNING A METAL LAYER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES BY USING THE SAME - Disclosed herein is a method for patterning a metal layer, which includes the following steps. A substrate having a metal layer thereon is provided. A patterned conductive polymeric layer is formed on the metal layer, wherein a portion of the metal layer is exposed by the patterned conductive polymeric layer. The substrate having the patterned conductive polymer layer is disposed in an electrolytic cell, so that the exposed portion of the metal layer is immersed in the electrolytic solution of the electrolytic cell. The anode of the electrolytic cell is electrically coupled to the patterned conductive polymeric layer, while the cathode of the electrolytic cell is immersed in the electrolytic solution. Sequentially, an electrical potential is applied across the anode and the cathode to perform an electrolysis reaction so that the exposed portion of the metal layer is dissolved in the electrolytic solution. | 05-31-2012 |
Patent application number | Description | Published |
20100205880 | RAIL ASSEMBLY FOR A GLASS DOOR - A rail assembly for a glass door has a rail body, two clamping members, a pushing member and at least one pushing bolt. The rail body has a clamping channel defined in and along the rail body. The clamping members are movably mounted in the clamping channel. Each clamping member has a clamping recess and an inclined guiding surface. The clamping recess is defined in the clamping member at a side facing to the other clamping member. The inclined guiding surface is defined in the clamping member at a side opposite to the other clamping member. The pushing member is mounted movably in the clamping channel, holding the ends of the clamping members inside and has two inclined surfaces abutting respectively with the guiding surfaces of the clamping members. The least one pushing bolt is screwed into the rail body and pushes against the pushing member. | 08-19-2010 |
20110025075 | WINDOW TILT LATCH - A window tilt latch has a casing, a latching bolt and a safety device. The latching bolt is mounted slidably in the casing and has a latching end, an inner end and a sliding element. The latching end extends out of the casing. The sliding element is mounted on the latching bolt and is mounted slidably in a guiding slot defined in the casing. The safety device is mounted on the casing and has a control knob mounted rotatably on the casing, selectively abuts with the inner end of the latching bolt to keep the latching bolt from being retracted into the casing. The control knob has an inserting hole selectively aligning with the inner end of the latching bolt to allow the inner end of the latching bolt to be inserted into the inserting hole and to retract the latching bolt into the casing. | 02-03-2011 |
20140109343 | AUTO-CLOSING DEVICE FOR A SLIDING DOOR - An auto-closing device has a base, a cylinder, a slider, a spring and an adjusting device. The adjusting device is connected to an end of the spring opposite to the slider and has an adjusting frame and an adjusting bolt. The adjusting frame has a first end connected securely to the spring and a second end provided with a threaded hole. The adjusting bolt is mounted rotatably on the base and is screwed into the threaded hole in the adjusting frame. Accordingly, when the adjusting bolt is rotated, the adjusting frame is moved relative to the body so that the pulling force provided by the spring is adjusted to fit with different door panels with different weights. | 04-24-2014 |
Patent application number | Description | Published |
20140313466 | PIXEL STRUCTURE - A pixel structure including a scan line, a data line, an active device, a pixel electrode, a capacitor electrode line, a semi-conductive pattern layer and at least one dielectric layer is provided. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The capacitor electrode line is located under the pixel electrode. A first storage capacitor is formed between the capacitor electrode line and the pixel electrode. The semi-conductive pattern layer is disposed between the capacitor electrode line and the pixel electrode, the pixel electrode is electrically connected to the semi-conductive pattern layer. A second storage capacitor is formed between the semi-conductive pattern layer and the capacitor electrode line. The dielectric layer is disposed between the capacitor electrode line and the pixel electrode and located between the semi-conductive pattern layer and the capacitor electrode line. | 10-23-2014 |
20140313467 | PIXEL STRUCTURE - A pixel structure including a scan line, a data line, an active device, a pixel electrode, a capacitor electrode line, a semi-conductive pattern layer and at least one dielectric layer is provided. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The capacitor electrode line is located under the pixel electrode. A first storage capacitor is formed between the capacitor electrode line and the pixel electrode. The semi-conductive pattern layer is disposed between the capacitor electrode line and the pixel electrode, the pixel electrode is electrically connected to the semi-conductive pattern layer. A second storage capacitor is formed between the semi-conductive pattern layer and the capacitor electrode line. The dielectric layer is disposed between the capacitor electrode line and the pixel electrode and located between the semi-conductive pattern layer and the capacitor electrode line. | 10-23-2014 |
20150021708 | PIXEL STRUCTURE - A pixel structure includes a substrate, a scan line on the substrate, a data line set, an active device, and a pixel electrode. The substrate has a display region and a peripheral region around the display region. The display region includes at least one sub-pixel region. The data line set is disposed on the substrate, located at one side of the sub-pixel region, and intersected with the scan line to form at least one first intersecting region. The data line set includes a first and a second data lines that are intersected to form at least one second intersecting region. The first and the second data lines are electrically insulated. The active device electrically connects the scan line and to the first data line or the second data line in the data line set. The pixel electrode is located in the sub-pixel region and electrically connects the active device. | 01-22-2015 |