Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Sundarrajan
Arvind Sundarrajan, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100096273 | CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW - A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings. | 04-22-2010 |
| 20100105203 | METHODS FOR REDUCING DAMAGE TO SUBSTRATE LAYERS IN DEPOSITION PROCESSES - Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius. | 04-29-2010 |
| 20100155223 | Electromagnet array in a sputter reactor - A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias. | 06-24-2010 |
Arvind Sundarrajan, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090233438 | SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING - A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets. | 09-17-2009 |
Srikanth Sundarrajan, Chennai IN
| Patent application number | Description | Published |
|---|---|---|
| 20090287823 | METHOD AND SYSTEM FOR SERVER CONSOLIDATION USING A HILL CLIMBING ALGORITHM - A system and method for consolidating a plurality of resources on a plurality of data processing units (DPUs) in a data processing network is provided. The method includes selecting a first DPU having a highest DPU volume among the plurality of DPUs. The method further includes calculating an angle made by a first DPU vector of the first DPU with a horizontal dimension of a multi-dimensional chart using first DPU co-ordinates from the plurality of DPU co-ordinates. Further, the method includes calculating an angle made by a first resource vector of a first resource to be assigned to the first DPU with a horizontal dimension of the multi-dimensional chart. Thereafter, the first resource is assigned to the first DPU, when a deviation of the first resource vector from the first DPU vector is minimum among the plurality of resources. | 11-19-2009 |
| 20100042723 | METHOD AND SYSTEM FOR MANAGING LOAD IN A NETWORK - A method for managing load in a network comprising a first set of hosts, a second set of hosts and a centralized server is provided. A virtual machine runs on each of the first set of hosts. The centralized server receives resource donation information from each of the second set of hosts that are underutilized. Further, a load surge indicating additional tasks to be performed by the first set of hosts and the second set of hosts is identified. Next, the centralized server negotiates with the second set of hosts for modification of the resource donation information. Thereafter, one or more hosts are determined, based on the resource donation information and the load surge. These hosts create a virtual machine, based on the resource donation information, and become a part of the first set of hosts. The centralized server delegates the additional tasks among the first set of hosts. | 02-18-2010 |
Srikanth Sundarrajan, Velachery IN
| Patent application number | Description | Published |
|---|---|---|
| 20090311986 | System, method and computer program product for disseminating early warning messages - A method for disseminating Early Warning Messages (EWMs) to subscriber terminals by an Early Warning Unit (EWU) in a mobile communication network is provided. The method comprises identifying at least one base station in a first region and sending a trigger signal to the identified base station for initiating the dissemination of the EWMs. The method further comprises sending an invitation request to one or more peer base stations in a second region and receiving subscriber details from one or more base stations. The method furthermore comprises selectively disseminating the EWMs to the one or more subscriber terminals based on location details of the subscriber terminals using a grid computing architecture. The grid computing architecture facilitates parallel dissemination of the EWMs to the one or more subscriber terminals by splitting the subscriber details into one or more data fragments. | 12-17-2009 |