Patent application number | Description | Published |
20090173986 | Semiconductor Devices Including Gate Structures and Leakage Barrier Oxides - Methods of forming a semiconductor device may include forming a tunnel oxide layer on a semiconductor substrate, forming a gate structure on the tunnel oxide layer, forming a leakage barrier oxide, and forming an insulating spacer. More particularly, the tunnel oxide layer may be between the gate structure and the substrate, and the gate structure may include a first gate electrode on the tunnel oxide layer, an inter-gate dielectric on the first gate electrode, and a second gate electrode on the inter-gate dielectric with the inter-gate dielectric between the first and second gate electrodes. The leakage barrier oxide may be formed on sidewalls of the second gate electrode. The insulating spacer may be formed on the leakage barrier oxide with the leakage barrier oxide between the insulating spacer and the sidewalls of the second gate electrode. In addition, the insulating spacer and the leakage barrier oxide may include different materials. Related structures are also discussed. | 07-09-2009 |
20090250752 | Methods of fabricating semiconductor device having a metal gate pattern - A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H | 10-08-2009 |
20090256177 | Semiconductor device including an ohmic layer - In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance. | 10-15-2009 |
20090298273 | METHODS OF FORMING RECESSED GATE ELECTRODES HAVING COVERED LAYER INTERFACES - Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers. | 12-03-2009 |
20100078670 | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device - Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate. | 04-01-2010 |
20100120183 | Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region. | 05-13-2010 |
20100176415 | LIGHT EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11. | 07-15-2010 |
20110161583 | MEMORY CARD AND MEMORY SYSTEM INCLUDING SEMICONDUCTOR CHIPS IN STACKED STRUCTURE - A memory card and memory system are disclosed. The memory card includes a plurality of ports formed on an external surface of the memory card, a memory controller coupled to the plurality of ports and configured to communicate with an external host through the ports, and to generate a plurality of internal signals for controlling a memory operation based on signals received from the external host, and a memory device coupled to the memory controller and comprising at least two semiconductor chips, which are vertically stacked on each other. Each semiconductor chip comprises a plurality of through substrate vias for receiving the plurality of internal signals from the memory controller. The memory controller generates first and second internal signals based on a first signal received through a first port, and the first and second internal signals are provided to the memory device respectively through first and second signal paths that are electrically isolated from each other. | 06-30-2011 |
20120107988 | LIGHT EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT EMITTING DEVICE COMPRISING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING ELEMENT AND THE LIGHT EMITTING DEVICE - Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate. | 05-03-2012 |
20120193672 | METHOD OF FABRICATING LIGHT-EMITTING APPARATUS WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND LIGHT-EMITTING APPARATUS FABRICATED USING THE METHOD - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region. | 08-02-2012 |
20130021760 | MULTI-CHANNEL PACKAGE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A multi-channel package has at least four channels and includes a package substrate having a first surface and a second surface, semiconductor chips mounted on the first surface of the package substrate, and external connection terminals disposed on the second surface of the package substrate and electrically connected to the semiconductor chips by the at least four channels. Each channel is dedicated to one or a group of the chips. An electronic system includes a main board, at least one such multi-channel package mounted on the main board, and a controller package that is mounted on the main board, has 4n channels (wherein n≧2) and controls the at least one multi-channel package. | 01-24-2013 |
20130056882 | SEMICONDUCTOR PACKAGE HAVING SUPPORT MEMBER - Semiconductor packages including a substrate, a plurality of first semiconductor chips stacked on the substrate, a second semiconductor chip interposed between the substrate and a lowermost semiconductor chip among the first semiconductor chips, and a supporting member disposed between the substrate and the lowermost semiconductor chip among the first semiconductor chips to support the first semiconductor chips, may be provided. The supporting member may include a passive element such as a capacitor, a resistor, or an inductor. By including the supporting member, the semiconductor packages may achieve a smaller planar size and have an improved tolerance for subsequent interconnections. | 03-07-2013 |
20130193474 | LIGHT EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT EMITTING DEVICE COMPRISING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING ELEMENT AND THE LIGHT EMITTING DEVICE - Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate. | 08-01-2013 |
20130299771 | Semiconductor Device Including Transistor - A semiconductor device has a semiconductor body including a source region, a channel region, and a drain region, which are sequentially arranged in a longitudinal direction and are doped with the same type of impurity, a gate electrode including metal, and a gate dielectric layer interposed between the semiconductor body and the gate electrode. | 11-14-2013 |
20140061710 | METHOD OF FABRICATING LIGHT-EMITTING APPARATUS WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND LIGHT-EMITTING APPARATUS FABRICATED USING THE METHOD - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region. | 03-06-2014 |
20140091460 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A stack of semiconductor chips, a semiconductor device, and a method of manufacturing are disclosed. The stack of semiconductor chips may comprise a first chip of the stack, a second chip of the stack over the first chip, conductive bumps, a homogeneous integral underfill material, and a molding material. The conductive bumps may extend between an upper surface of the first chip and a lower surface of the second chip. The homogeneous integral underfill material may be interposed between the first chip and the second chip, encapsulate the conductive bumps, and extend along sidewalls of the second chip. The homogeneous integral underfill material may have an upper surface extending in a direction parallel to an upper surface of the second chip and located adjacent the upper surface of the second chip. The molding material may be on outer side surfaces of the homogeneous integral underfill material above the upper surface of the first chip, wherein, in view of a first cross sectional profile, the molding material is separated from sidewalls of the second chip by the homogeneous integral underfill material such that the molding material does not contact sidewalls of the second chip. | 04-03-2014 |
20140145352 | SEMICONDUCTOR PACKAGES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A plurality of semiconductor chips may be stacked on the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad. | 05-29-2014 |