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| 20110242927 | Encoded Read-Only Memory (ROM) Decoder - Decoder circuits capable of decoding encoded ROM memory are provided. Embodiments provide several improvements over prior solutions which rely primarily on CMOS logic (e.g., inverters). For example, embodiments provide faster decoding by limiting the number of decoding stages to a single stage. Further, embodiments allow the use of partial swing (as opposed to full swing) on the bit lines, which results in significant power reduction. This, in turn, results in reduced amounts of capacitor discharges when reading the data. | 10-06-2011 |
| 20110273919 | Read-Only Memory (ROM) Bitcell, Array, and Architecture - Embodiments provide improved memory bitcells, memory arrays, and memory architectures. In an embodiment, a memory cell comprises a transistor having drain, source, and gate terminals; and a plurality of program nodes, with each of the program nodes charged to a pre-determined voltage and coupled to a respective one of a plurality of bit lines. | 11-10-2011 |
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| 20100121818 | Real-Time File Synchronization - A method of real-time file synchronization includes segmenting a file to be synchronized into a plurality of segments, each segment of the plurality of segments representing a portion of the file to be displayed on slave systems. The method further includes indexing the plurality of segments into a file index, the file index organized based on the format of the file to be synchronized. The method further includes generating a synchronization key, the synchronization key being included within the file to be synchronized. The method further includes transmitting a synchronization signal if a segment change is detected, the synchronization signal including a file index value, the file index value representing the segment change. The method further includes receiving the synchronization signal. | 05-13-2010 |
| 20120047467 | PORT COMPATIBILTY CHECKING FOR STREAM PROCESSING - A port compatibility connection engine for a large scale stream processing framework is provided. The port compatibility management unit analyzes port definitions of processing elements (PEs) to validate interconnectivity between said elements. In particular, the port compatibility management unit determines the ability of the PEs to produce and/or consume data streams based on the data stream schema definitions specified on the PE ports. In addition, the port compatibility management unit analyzes security, scope, persistence, and other factors that impact interconnectivity. The port compatibility management unit generates a connection topology snapshot based on the above analysis and identifies the combination of PEs that cannot interconnect and provides the information in an output format that allows for visualization, filtering, and automatic fix capability. | 02-23-2012 |
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| 20100211028 | CARDIOTOMY AND VENOUS BLOOD RESERVOIR AND METHOD - A cardiotomy and venous blood reservoir including a housing assembly, a downtube, and a bowl. The housing assembly forms a chamber. The downtube extends from an inlet port to a downstream end within the chamber. A diameter of the tube lumen increases to the downstream end. The bowl forms a floor surface shoulder, intermediate segment, and protrusion. The shoulder circumferentially surrounds, and is spatially above, the downstream end. The intermediate segment extends radially inwardly and downwardly from the shoulder to a bottom face. The protrusion extends radially inwardly and upwardly from the bottom face to a center that is aligned with the lumen and below the downstream end. The flared inner diameter of the lumen reduces fluid velocity as venous blood enters the reservoir. The bowl floor surface gently receives the incoming venous blood at the protrusion, and smoothly guides the blood flow. | 08-19-2010 |
| 20100268148 | Cardiotomy and Venous Blood Reservoir and Method - A cardiotomy and venous blood reservoir, including a housing assembly, a venous inlet port, a venous sub-assembly, a cardiotomy inlet port, and a cardiotomy sub-assembly. The housing forms a chamber. The venous sub-assembly includes a downtube and a bowl. A diameter of the downtube lumen increases to a downstream end. The bowl forms a floor surface for receiving flow from the lumen. The cardiotomy sub-assembly includes a dish and an inner post. The dish defines an aperture. The inner post extends from the dish and forms a guide surface received within the central aperture and forming an undulating curvature increasing to a diameter greater than the diameter of the central aperture. Cardiotomy liquid drops from the dish fall on to the undulating, closely positioned guide surface with minimal splashing. | 10-21-2010 |
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| 20080272362 | ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR WHITE EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided. | 11-06-2008 |
| 20080272387 | ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided. | 11-06-2008 |
| 20100155694 | ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided. | 06-24-2010 |
| 20100224889 | Polychromatic LED's and Related Semiconductor Devices - A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided. | 09-09-2010 |
| 20100295057 | DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION - An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source. | 11-25-2010 |
| 20110117750 | NOVEL WET ETCHING AGENT FOR II-VI SEMICONDUCTORS AND METHOD - A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors. | 05-19-2011 |
| 20110121319 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME - Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP. | 05-26-2011 |
| 20110150020 | II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD - Light sources are disclosed. A disclosed light source includes a III-V based pump light source ( | 06-23-2011 |
| 20120037957 | SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS - We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance. | 02-16-2012 |
| 20120097921 | Cadmium-free Re-Emitting Semiconductor Construction - Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy. | 04-26-2012 |
| 20120097983 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE - Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ | 04-26-2012 |
