Patent application number | Description | Published |
20100100255 | CONTROL DEVICE AND CONTROL METHOD OF TEMPERATURE CONTROLLER - A control device of a temperature controller, for adjusting the temperature of an environment having at least one active object, includes a first image sensor, a second image sensor, a process unit and a control unit. The first image sensor is for capturing a first image containing the image of the active object. The second image sensor is for capturing a second image containing the image of the active object. The process unit calculates a distance between the active object and the temperature controller according to the first and second images. The control unit controls an operational status of the temperature controller according to the distance calculated by the process unit. The present invention further provides a control method of a temperature controller | 04-22-2010 |
20110032230 | CONTROL DEVICE AND CONTROL METHOD FOR IMAGE DISPLAY - A control device for an image display includes at least two reference points, a modulation unit and a remote controller. The modulation unit modulates the light of a predetermined spectrum generated by the reference points with a brightness variation cycle. The modulation unit controls the reference points to emit the light with a first brightness within a first period of the brightness variation cycle and to emit the light with a second brightness within a second period of the brightness variation cycle, wherein the first brightness and the second brightness are not zero gray level. The remote controller captures the light of the predetermined spectrum with a sampling cycle and demodulates an image variation of the reference points with respect to the remote controller. The present invention further provides a control method for an image display. | 02-10-2011 |
20130222346 | OPTICAL TOUCH DEVICE AND DETECTION METHOD THEREOF - There is provided an optical touch device including a light source, a light control unit, a light guide, an image sensor and a processing unit. The light control unit controls the light source to illuminate in different brightness values. The light guide has an incident surface, a touch surface and an ejection surface, wherein the light source emit incident light into the light guide through the incident surface, and a plurality of microstructures are formed inside of and/or on the ejection surface of the light guide to disperse the incident light toward the touch surface to become dispersed light. The image sensor receives reflected light ejecting from the ejection surface to generate image frames corresponding to the different brightness values of the light source. The processing unit calculates a differential image of the image frames to accordingly identify an operating state. | 08-29-2013 |
Patent application number | Description | Published |
20120107545 | MICROMACHINED STRUCTURES - A micromachined structure includes a substrate and a suspended structure. The substrate has a cavity formed thereon. The suspended structure is formed on the cavity of the substrate. The suspended structure includes a first metal layer, a second metal layer, and a first dielectric layer positioned between the first and second metal layers, wherein the first dielectric layer has a first opening in communication with the cavity through an opening formed in the first metal layer. | 05-03-2012 |
20120261775 | MEMS microphone device and method for making same - The present invention discloses a MEMS microphone device and its manufacturing method. The MEMS microphone device includes: a substrate including a first cavity; a MEMS device region above the substrate, wherein the MEMS device region includes a metal layer, a via layer, an insulating material region and a second cavity; a mask layer above the MEMS device region; a first lid having at least one opening communicating with the second cavity, the first lid being fixed above the mask layer; and a second lid fixed under the substrate. | 10-18-2012 |
20130139595 | Three-Dimensional Micro-Electro-Mechanical-System Sensor - The present invention discloses a three-dimensional micro-electro-mechanical-system sensor. The sensor includes movable first electrodes, plural movable second electrodes, plural fixed third electrodes, and plural fixed fourth electrodes. The first electrodes and their adjacent third electrodes form at least one first capacitor and at least one second capacitor, and the second electrodes and their adjacent fourth electrodes form at least one third capacitor. The capacitance change of the first capacitor reflects the displacement of the proof mass along a first axis, the capacitance change of the second capacitor reflects the displacement of the proof mass along a second axis, and the capacitance change of the third capacitor reflects the displacement of the proof mass along a third axis. The first, second, and third axes define a three-dimensional coordinate system. | 06-06-2013 |
20130152688 | MICRO-ELECTRO-MECHANICAL SENSING DEVICE AND MANUFACTURING METHOD THEREOF - A micro-electro-mechanical sensing device including a substrate, a semiconductor layer, a supporting pillar, a first suspended arm, a connecting member, a second suspended arm, and a proof mass is provided. The semiconductor layer is disposed on or above the substrate. The supporting pillar is disposed on or above the semiconductor layer. The first suspended arm is disposed on the supporting pillar. The supporting connects a portion of the first suspended arm. The connecting member directly or indirectly connects another portion of the first suspended arm. The second suspended arm has a first surface and a second surface opposite to the first surface. The connecting member connects a portion of the first surface. The proof mass connects the second suspended arm and it includes a portion of the second suspended arm as a portion of the proof mass. A method for manufacturing the device is also provided. | 06-20-2013 |
20130313662 | MEMS MICROPHONE DEVICE AND METHOD FOR MAKING SAME - The present invention discloses a MEMS microphone device and its manufacturing method. The MEMS microphone device includes: a substrate including a first cavity; a MEMS device region above the substrate, wherein the MEMS device region includes a metal layer, a via layer, an insulating material region and a second cavity; a mask layer above the MEMS device region; a first lid having at least one opening communicating with the second cavity, the first lid being fixed above the mask layer; and a second lid fixed under the substrate. | 11-28-2013 |
Patent application number | Description | Published |
20100276761 | Non-Planar Transistors and Methods of Fabrication Thereof - Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region. | 11-04-2010 |
20110068411 | Block Contact Plugs for MOS Devices - An integrated circuit structure includes a semiconductor substrate; a gate stack overlying the semiconductor substrate; a gate spacer on a sidewall of the gate stack; a first contact plug having an inner edge contacting a sidewall of the gate spacer, and a top surface level with a top surface of the gate stack; and a second contact plug over and contacting the first contact plug. The second contact plug has a cross-sectional area smaller than a cross-sectional area of the first contact plug. | 03-24-2011 |
20130043512 | Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers - Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed. | 02-21-2013 |
20130277769 | Non-Planar Transistors and Methods of Fabrication Thereof - Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region. | 10-24-2013 |
20140084340 | Contact Structure Of Semiconductor Device - The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; and a metal layer filling a coated opening of the dielectric layer. | 03-27-2014 |
20140124842 | Contact Structure of Semiconductor Device - The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer. | 05-08-2014 |
20140183600 | NOVEL FIN STRUCTURE OF FINFET - A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the mesa, and a convex-shaped feature disposed between the channel and the mesa. The mesa has a first semiconductor material, and the channel has a second semiconductor material different from the first semiconductor material. The convex-shaped feature is stepped-shaped, stair-shaped, or ladder-shaped. The convex-shaped feature includes a first isolation feature disposed between the channel and the mesa, and a second isolation feature disposed between the channel and the first isolation feature. The first isolation feature is U-shaped, and the second isolation feature is rectangular-shaped. A portion of the second isolation feature is surrounded by the channel and another portion of the second isolation feature is surrounded by the first isolation feature. | 07-03-2014 |
20140363943 | Contact Structure of Semiconductor Device Priority Claim - The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer. | 12-11-2014 |
20140374838 | FinFETs with Nitride Liners and Methods of Forming the Same - An integrated circuit structure includes a semiconductor substrate, which includes a semiconductor strip. A Shallow Trench Isolation (STI) region is on a side of the semiconductor strip. The STI region includes a first portion comprising an oxide and a second portion free from oxide. The second portion separates the first portion from the semiconductor substrate. A semiconductor fin is over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the STI region. | 12-25-2014 |
20150041918 | Self-Aligned Dual-Metal Silicide and Germanide Formation - A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals. | 02-12-2015 |
Patent application number | Description | Published |
20100309193 | Method for Updating Display Image of Electrophoretic Display Panel and Electrophoretic Display Apparatus using the same - A method for updating display image of an electrophoretic display panel and an electrophoretic display apparatus using the same are provided. In the aforementioned method, the gate lines of the electrophoretic display panel are divided into a first group and a second group. The display data related to pixels coupled to the gate lines of the fist group need not to be updated. Furthermore, the display data related to at least one of the pixels coupled to the gate lines of the second group need to be updated. The first type gate pulses are provided to the gate lines of the first group respectively, and second type gate pulses are provided to the gate lines of the second group respectively. The second type gate pulse has a predetermined pulse width. The pulse width of the first type gate pulse is shorter than the predetermined pulse width. | 12-09-2010 |
20100327289 | FLAT DISPLAY PANEL, UV SENSOR AND FABRICATION METHOD THEREOF - A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels. | 12-30-2010 |
20110148859 | METHOD OF DETERMINING POINTING OBJECT POSITION FOR THREE-DIMENSIONAL INTERACTIVE SYSTEM - An exemplary method of determining a pointing object position for three-dimensional interactive system, adapted for an interaction between a pointing object and a three-dimensional interaction display with embedded optical sensors. The method includes the steps of: acquiring a two-dimensional detected light intensity distribution caused by the pointing object acting on the three-dimensional interaction display; obtaining two light-shading intensity maximum values according to the two-dimensional detected light intensity distribution; and determining a one-dimensional positional information of the pointing object on a distance direction of the pointing object relative to the three-dimensional interaction display by use of the positional distance between the two light-shading intensity maximum values. | 06-23-2011 |
20110298779 | Electrophoretic Device and Driving Method Thereof - A driving method for driving an electrophoretic display device is provided. The electrophoretic display device comprises a plurality of scan lines. When scanning a frame of a first set of frames, the plurality of scan lines are sequentially enabled from top to bottom. When scanning a frame of a second set of frames, the plurality of scan lines are sequentially enable from bottom to top. | 12-08-2011 |