Patent application number | Description | Published |
20130207124 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region, and is of the second conductivity type. A gate insulation film is provided on the second region so as to connect the first region with the third region. A gate electrode is provided on the gate insulation film. A first electrode is provided on the first region. A second electrode is provided on the third region. | 08-15-2013 |
20130208747 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In | 08-15-2013 |
20130210208 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A first layer constituting a first surface of a silicon carbide layer and of a first conductivity type is prepared. An internal trench is formed at a face opposite to the first surface of the first layer. Impurities are implanted such that the conductivity type of the first layer is inverted on the sidewall of the internal trench. By the implantation of impurities, there are formed from the first layer an implantation region located on the sidewall of the internal trench and of a second conductivity type, and a non-implantation region of the first conductivity type. A second layer of the first conductivity type is formed, filling the internal trench, and constituting the first region together with the non-implantation region. | 08-15-2013 |
20130210255 | TERMINAL FITTING - An object of the present invention is to provide a terminal fitting with improved waterproof property. A terminal fitting ( | 08-15-2013 |
20130214290 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide layer having a first surface and a second surface includes a first region constituting the first surface and of a first conductivity type, a second region provided on the first region and of said second conductivity type, and a third region provided on the second region and of the first conductivity type. At the second surface is formed a gate electrode having a bottom and sidewall, passing through the third region and the second region up to the first region. An additional trench is formed, extending from the bottom of the gate trench in the thickness direction. A fourth region of the second conductivity type is formed to fill the additional trench. | 08-22-2013 |
20130214593 | RELAY BUSBAR DEVICE WITH BUILT-IN CURRENT SENSOR FOR VEHICLE - A relay busbar device of one embodiment is a relay busbar device with a built-in current sensor, which is interposed between a motor casing and an inverter casing, and includes a relay busbar both ends of which enter into both of the casings; a resin plate, through which the relay busbar penetrates, and which is interposed between the two casings; a magnetic core, positioned within the resin plate and surrounding the relay busbar; and a magnetic sensor provided in a removed portion of the magnetic core. The relay busbar is mold-formed integrally with the resin plate during resin molding thereof, and changes in magnetic field occurring in the removed portion due to the current flowing in the relay busbar are detected by the magnetic sensor, and the value of the current flowing in the relay busbar is measured. | 08-22-2013 |
20130215982 | COMMUNICATION SYSTEM, COMMUNICATION METHOD, RELAYING DEVICE, AND RECORDING MEDIUM - A communication system between a vehicle and a communication device is disclosed. The vehicle transmits electricity supply information in an A-method to a relaying device like an electricity supply device through an electricity supply line. The electricity supply device receives the electricity supply information in the A-method, then, based on the electricity supply information in the A-method, generates electricity supply information in a B-method, and transmits to the communication device the electricity supply information obtained by conversion into the B-method. The communication device transmits electricity supply information in the B-method to the electricity supply device. The electricity supply device receives the electricity supply information in the B-method, then, based on the received electricity supply information in the B-method, generates electricity supply information in the A-method, and transmits the electricity supply information obtained by conversion into the A-method, to the vehicle through the electricity supply line. | 08-22-2013 |
20130216175 | DUAL POLARIZATION QUADRATURE PHASE SHIFT KEYING OPTICAL MODULATOR - A DP QPSK optical modulator includes an input port; an optical branching unit; an optical modulation unit having first through fourth Mach-Zehnder interferometers; a first phase-change unit connected to the third Mach-Zehnder interferometer; a second phase-change unit connected to the fourth Mach-Zehnder interferometer; an optical multiplexer; and a multimode interference coupler including a multimode interference waveguide, first through third input ports, and an output port having a taper-shaped waveguide. The first Mach-Zehnder interferometer is connected to the first input port. One end of the optical multiplexer is connected to the second Mach-Zehnder interferometer and the third Mach-Zehnder interferometer via the first phase change unit. The other end of the optical multiplexer is connected to the second input port. The fourth Mach-Zehnder interferometer is connected to the third input port via the second phase-change unit. | 08-22-2013 |
20130216220 | OPTICAL TRANSMITTER IMPLEMENTED WITH TWO QPSK MODULATORS MADE OF SEMICONDUCTOR MATERIAL AND A METHOD TO CONTROL OPTICAL POWER OUTPUT THEREFROM - An optical transmitter implemented with two QPSK (Quadrature Phase Shift Keying) modulators is disclosed. Each of the QPSK modulators provides a waveguide made of semiconductor material inducing the QCSE (Quantum Confined Stark Effect) by a bias supplied thereto. The optical performance of one of the QPSK modulators is determined by supplying a deep bias to the other of the QPSK modulator to eliminate the optical output therefrom. | 08-22-2013 |
20130221375 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A silicon carbide semiconductor device includes an epitaxial layer, a gate insulating film, a gate electrode, a drain electrode, and a source electrode. The epitaxial layer is made of silicon carbide includes a mesa structure region having a top surface forming a first main surface and a side surface. The gate insulating film is provided on the top surface of the mesa structure region. The gate electrode is provided on the gate insulating film. The mesa structure region includes a first impurity region, a second impurity region, and a third impurity region. The source electrode is in contact with the third impurity region. In this way, there can be provided a silicon carbide semiconductor device having breakdown voltage improved by reducing electric field strength in the gate insulating film, as well as a method for manufacturing such a silicon carbide semiconductor device. | 08-29-2013 |
20130221492 | METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD - A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device. | 08-29-2013 |
20130223795 | OPTICAL COUPLING ELEMENT AND MANUFACTURING METHOD - The present invention relates to an optical coupling element to optically couple optical elements of different kinds to each other, which is provided with a plurality of cores. In the optical coupling element a first end and a second end opposed thereto are different in at least either of a core array and a core interval. The optical coupling element has a bent shape of at least a part of the optical coupling element itself including the cores, so that a light input/output direction at the first end is different from a light input/output direction at the second end. | 08-29-2013 |
20130224518 | CARBON WIRE AND NANO STRUCTURE FORMED OF CARBON FILM AND METHOD OF PRODUCING THE SAME - There are provided a carbon wire using CNT or a similar carbon filament having a sufficiently low electrical resistance value, and a wire assembly employing that carbon wire. A carbon wire ( | 08-29-2013 |
20130224941 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 08-29-2013 |
20130225380 | ROLLER FOR IMAGE-FORMING APPARATUS AND PROCESS FOR PRODUCING THE SAME - Provided is a roller for an image-forming apparatus which includes a base member and a fluororesin layer provided on an outer circumferential surface of the base member directly or through an adhesive layer, the roller for an image-forming apparatus being characterized in that the fluororesin layer contains phosphorus-doped tin oxide. The roller for an image-forming apparatus has a surface resistance capable of stably and effectively preventing the occurrence of electrostatic offsets, and also has an excellent releasing property. Also provided is a process for producing the roller for an image-forming apparatus, characterized by including the steps of applying a fluororesin dispersion containing an aqueous dispersion of phosphorus-doped tin oxide onto a base member or an adhesive layer disposed on an outer circumferential surface of the base member, and then sintering the fluororesin. | 08-29-2013 |
20130302552 | METHOD AND APPARATUS FOR MANUFACTURING CARBON NANOSTRUCTURE, AND CARBON NANOSTRUCTURE ASSEMBLY - There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member. | 11-14-2013 |
20130341633 | Semiconductor Device - Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S | 12-26-2013 |
20140064684 | OPTICAL FIBER - The present invention relates to an optical fiber having a structure to enable both prevention of resin coating combustion due to leaked light, and low-loss light transmission. The optical fiber comprises a core region, and a cladding region. The cladding region is constituted by an optical cladding which affects the transmission characteristics of light propagating in the core region, and a physical cladding which does not affect the transmission characteristics of light propagating in the core region. Particularly, a leakage reduction portion is provided in the physical cladding so as to surround an outer periphery of the core region through the optical cladding. The leakage reduction portion functions to suppress propagation of the leaked light propagating from the core region toward outside the cladding region. | 03-06-2014 |
20140064685 | OPTICAL FIBER AND OPTICAL COMMUNICATION SYSTEM INCLUDING THE SAME - An optical fiber according to an embodiment of the present invention is provided with a center core, a side core, and a cladding. The center core includes a ring part where a relative index difference varies discontinuously, in its peripheral region, and when a is a radius from a core center to an outside of the ring part and c is a radius to a position where the relative index difference is maximum in the side core, an index profile is realized in a shape where c/a is in the range of 2.25 to 2.50, so as to enable setting of a dispersion value, a cable cutoff wavelength, a bending loss in the diameter of 20 mm, and an effective area in desired ranges. | 03-06-2014 |
20140079362 | OPTICAL FIBER - An optical fiber | 03-20-2014 |
20140328565 | MULTIMODE OPTICAL FIBER AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a multimode optical fiber which can provide a smooth cut face suitable for fusion splicing between fibers. The multimode optical fiber has at least a core extending along a central axis and having an α-power refractive index profile, and a cladding, and a residual stress distribution in the core along a radial direction from the central axis has a shape with a maximum at a position intersecting with the central axis. | 11-06-2014 |