Patent application number | Description | Published |
20130015414 | AlxGa1-xN Crystal Substrate | 01-17-2013 |
20130029180 | Magnesium-Based Alloy Wire and Method of Its Manufacture - Magnesium-based alloy wire excelling in strength and toughness, its method of manufacture, and springs in which the magnesium-based alloy wire is utilized are made available. The magnesium-based alloy wire contains, in mass %, 0.1 to 12.0% Al, and 0.1 to 1.0% Mn, and is provided with the following constitution. Diameter d that is 0.1 mm or more and 10.0 mm or less; length L that is 1000d or more; tensile strength that is 250 MPa or more; necking-down rate that is 15% or more; and elongation that is 6% or more. Such wire is produced by draw-forming it at a working temperature of 50° C. or more, and by heating it to a temperature of 100° C. or more and 300° C. or less after the drawing process has been performed. | 01-31-2013 |
20130040437 | Method of Manufacturing Composite Substrate - A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied. | 02-14-2013 |
20130062118 | Terminal Connector and Electric Wire with Terminal Connector - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has an opening edge. The opening edge of the recess includes first opening edges that are parallel to each other. The space between the recesses adjacent to each other in the extending direction of the first opening edge is set narrower than the space between the recesses adjacent to each other in the extending direction of the electric wire. | 03-14-2013 |
20130082278 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor device and a method to produce the same are disclosed. The method includes steps of sequentially growing a channel layer and a first layer with bandgap energy Eg greater than that of channel layer; forming a gate replica on the first layer; selectively growing a second layer with Eg also greater than or equal to Eg of the channel layer; removing the gate replica to form a recess in the second layer; and forming the gate electrode in the recess and onto the first layer. | 04-04-2013 |
20130082776 | AMPLIFIER FOR RECEIVING OPTICAL SIGNALS COMPLEMENTARY TO EACH OTHER - An amplifier for detecting photocurrents complementary to each other is disclosed. The optical receiver includes two trans-impedance amplifiers (TIAs) each having the single phase arrangement, a level detector to detect an average level between respective outputs of the TIAs, a controller to detect a difference between each of the output of the TIA, and an offset canceller to bypass each of the photocurrents to compensate the output offset between two TIAs depending on the average level and the difference between two levels. | 04-04-2013 |
20130094528 | METHOD TO CONTROL EMISSION WAVELENGTH OF TUNABLE LASER DIODE - A method to control the emission wavelength of a tunable laser diode (LD) is disclosed. The method measures the first derivative of the wavelength against the first stimulus, typically a current injected in the SG-DFB region, and the second derivative of the wavelength against the power supplied to the heater in the CSG-DBR region. The method adjusts the current so as to coincide the emission wavelength with the target wavelength, then, corrects the target power for the heater based on the derivative of the current multiplied by a ratio of two derivatives measured in advance to the control of the heater current. | 04-18-2013 |
20130095294 | SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 10° C./cm or less. | 04-18-2013 |
20130099251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film ( | 04-25-2013 |
20130100320 | IMAGING APPARATUS AND IMAGING METHOD - An imaging apparatus includes a control unit, an imaging device, a memory, and a correction unit. The memory stores information for specifying a pixel as a defect pixel among the arrayed pixels if a variation in image data of the pixel in a period is a predetermined value or larger, the image data of each pixel being output from the imaging device when light with a constant first light-quantity level is incident on each pixel of the imaging device for the period. The correction unit obtains data for the defect pixel based on image data of a good pixel that is adjacent to the defect pixel among the arrayed pixels. | 04-25-2013 |
20130102141 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a MOSFET includes the steps of preparing a substrate ( | 04-25-2013 |
20130112993 | SEMICONDUCTOR DEVICE AND WIRING SUBSTRATE - A semiconductor device according to one embodiment of the present invention includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate and having a conductive property, and a semiconductor element mounted on the wiring layer. In the semiconductor device, the insulating substrate is composed of cBN or diamond. | 05-09-2013 |
20130112994 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE - The semiconductor module includes a base and at least one circuit substrate. The at least one circuit substrate has a supporting substrate and a semiconductor element supported by the supporting substrate. The base and/or the supporting substrate has a structure for fitting the at least one circuit substrate with the base. | 05-09-2013 |
20130119407 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, in the substrate, a trench opened on one main surface side of the substrate; and forming an oxide film in a region including a surface of the trench. In the step of forming the oxide film, the substrate is heated at a temperature of not less than 1250° C. in an atmosphere containing oxygen. | 05-16-2013 |
20130120890 | TRANSISTOR PROTECTION CIRCUIT - Provided is a transistor protection circuit capable of appropriately protecting a transistor even when a switching frequency is high. A transistor protection circuit according to an embodiment of the present invention is a transistor protection circuit for protecting a voltage-driven transistor that is switch-controlled by the application of a high-potential-side voltage or low-potential-side voltage of a power supply to a gate terminal of the transistor by a drive circuit. The transistor protection circuit has a power supply controller that gradually lowers the high-potential-side voltage of the power supply upon receiving a protection command for executing protection of the transistor. | 05-16-2013 |
20130126866 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device in one embodiment includes a wiring board having a wiring pattern; an N semiconductor elements(where N denotes a natural number equal to or greater than 2) mounted on a wiring board; and a current detection parts for detecting a current flowing through m semiconductor elements (where m denotes a natural number equal to or greater than 1 but less than M) of M semiconductor elements(where M denotes a natural number equal to or greater than 1 but equal to or less than N) mounted on the wiring board and selected from the N semiconductor elements. The M semiconductor elements are electrically connected in parallel through the wiring pattern, and the m semiconductor elements are electrically connected in parallel to the other semiconductor elements of the M semiconductor elements through the current detection part. | 05-23-2013 |
20130126904 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall. | 05-23-2013 |
20130129288 | OPTICAL CABLE - An optical cable comprises an optical fiber ribbon, a tension member and a sheath. The optical fiber ribbon is constructed by integrating a plurality of optical fibers arranged in parallel. The sheath is provided so as to surround the optical fiber ribbon. The sheath is used for protecting the optical cable. One optical fiber ribbon is arranged twistably within an inner space surrounded by the sheath. | 05-23-2013 |
20130130482 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller. | 05-23-2013 |
20130134442 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A MOSFET includes: a substrate provided with a trench having a side wall surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; an oxide film; and a gate electrode. The substrate includes a source region, a body region, and a drift region formed to sandwich the body region between the source region and the drift region. The source region and the body region are formed by means of ion implantation. The body region has an internal region sandwiched between the source region and the drift region and having a thickness of 1 μm or smaller in a direction perpendicular to a main surface thereof. The body region has an impurity concentration of 3×10 | 05-30-2013 |
20130135046 | SWITCHING CIRCUIT AND ENVELOPE SIGNAL AMPLIFIER - A switching circuit | 05-30-2013 |
20130135054 | TRANS-IMPEDANCE AMPLIFIER WITH ENHANCED DYNAMIC RANGE BUT INVARIABLE INPUT IMPEDANCE - A trans-impedance amplifier (TIA) for an optical receiver is discloses, in which the TIA enhances the dynamic range thereof but suppresses the variation of the input impedance thereof. The TIA enhances the dynamic range by subtracting the photocurrent input therein, which varies the input impedance. The TIA also provides the variable gain amplifier with a feedback resistor. The variable gain of the amplifier compensates the variation of the input impedance due to the current subtraction. | 05-30-2013 |
20130135710 | WAVELENGTH CONVERSION DEVICE AND LASER DEVICE - The present invention relates to a wavelength conversion device and others. The wavelength conversion device is provided with an input port, a beam homogenizer, a wavefront aberration compensating element, and a nonlinear conversion element of a nonlinear optical crystal. The beam homogenizer forms a flat-top light intensity distribution of an output laser beam at a position different from a beam waist position thereof. Thereafter, the wavefront aberration compensating element outputs the laser beam coming from the beam homogenizer, as a phase-aligned collimated beam to the wavelength conversion element. | 05-30-2013 |
20130137254 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device has the following steps. A substrate having a silicon carbide layer of a first conductivity type is prepared. On the silicon carbide layer, a mask layer is formed. By ion implantation from above the mask layer, a well region of a second conductivity type is formed on the silicon carbide layer. At the step of forming the mask layer, the mask layer having an opening with a taper angle, which is an angle formed between a bottom surface and an inclined surface of mask layer, being larger than 60° and not larger than 80° is formed. Thus, a method of manufacturing a semiconductor device, capable of producing a semiconductor device having high degree of integration and high breakdown voltage, can be provided. | 05-30-2013 |
20130140583 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - First, third, and fourth regions have a first conductivity type, and a second region has a second conductivity type. The second region is provided with a plurality of through holes exposing the first region. The third region includes a contact portion, a connecting portion, and a filling portion. The contact portion is in contact with a first portion of the second region. The connecting portion extends from the contact portion to each of the plurality of through holes in the second region. The filling portion fills each of the plurality of through holes in the second region. The fourth region, is provided on the first portion of the second region. | 06-06-2013 |
20130142210 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding. | 06-06-2013 |
20130148966 | OPTICAL MODULE HAVING A PLURALITY OF OPTICAL SOURCES - An optical module that outputs a wavelength multiplexed optical signal is disclosed. The optical module provides at least first to third optical source, a wavelength multiplexer, a polarization rotator, and a polarization multiplexer. The optical sources each outputting first to third optical signals with a wavelength different from others. The wavelength multiplexer multiplexes the first optical signal with the third optical signal. The polarization rotator rotates the polarization vector of one of the multiplexed first and third optical signals and the second signal by substantially 90°. The polarization multiplexer multiplexes the polarization rotated optical signal with the second optical signal. | 06-13-2013 |
20130148970 | RECEIVER OPTICAL MODULE FOR RECEIVING WAVELENGTH MULTIPLEXED OPTICAL SIGNALS AND METHOD TO ASSEMBLE THE SAME - A receiver optical module to facilitate the assembling is disclosed. The receiver optical module includes an intermediate assembly including the optical de-multiplexer and the optical reflector each mounted on the upper base, and the lens and the PD mounted on the sub-mount. The latter assembly is mounted on the bottom of the housing; while, the former assembly is also mounted on the bottom through the lower base. The upper base is apart from the bottom and extends in parallel to the bottom to form a surplus space where the amplifying circuit is mounted. | 06-13-2013 |
20130149850 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type region in a region including the main surface, forming an oxide film on the main surface across the n type region and the p type region, by heating the substrate having the p type region formed therein at a temperature of 1250° C. or more, removing the oxide film to expose at least a part of the main surface, and forming a Schottky electrode in contact with the main surface that has been exposed by removing the oxide film. | 06-13-2013 |
20130149853 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate; forming a gate insulating film; forming a gate electrode; forming an interlayer insulating film to surround the gate electrode; forming a contact hole extending through the interlayer insulating film to expose a main surface of the substrate; and forming a first metal film on and in contact with a side wall surface of the contact hole, the first metal film containing at least one of Ti and Si and containing no Al; forming a second metal film containing Ti, Al, and Si on and in contact with the first metal film; and forming a source electrode containing Ti, Al, and Si by heating the first and second metal films. | 06-13-2013 |
20130153925 | SEMICONDUCTOR DEVICE - A MOSFET includes: a substrate having a trench formed therein and made of silicon carbide, the trench being opened on one main surface side and having a side wall surface; a gate insulating film formed on the side wall surface in contact therewith; and a gate electrode formed on the gate insulating film in contact therewith, wherein a square region with each side of 100 nm in the side wall surface has a surface roughness of not more than 1.0 nm in RMS. | 06-20-2013 |
20130153926 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A MOSFET includes: a substrate made of silicon carbide and having a first trench and a second trench formed therein, the first trench having an opening at the main surface side, the second trench having an opening at the main surface side and being shallower than the first trench; a gate insulating film; a gate electrode; and a source electrode disposed on and in contact with a wall surface of the second trench. The substrate includes a source region, a body region, and a drift region. The first trench is formed to extend through the source region and the body region and reach the drift region. The second trench is formed to extend through the source region and reach the body region. | 06-20-2013 |
20130156056 | SHUNT DRIVER CIRCUIT FOR LASER DIODE WITH PUSH PULL ARCHITECTURE - A shunt driver for driving an LD is disclosed. The shunt driver has the push-pull architecture with the high side driver and the low side driver. The high side driver is driven by a positive phase signal superposed with a signal with a phase opposite to the negative phase signal. The low side driver is driven by a negative phase signal superposed with a signal with a phase opposite to the positive phase signal. Adjusting the magnitude of the superposed signals, the driving current for the LD has the peaking in the rising and falling edges thereof. | 06-20-2013 |
20130160699 | Method of Manufacturing III-Nitride Crystal - Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. | 06-27-2013 |
20130161619 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A silicon carbide substrate includes: an n type drift layer having a first surface and a second surface opposite to each other; a p type body region provided in the first surface of the n type drift layer; and an n type emitter region provided on the p type body region and separated from the n type drift layer by the p type body region. A gate insulating film is provided on the p type body region so as to connect the n type drift layer and the n type emitter region to each other. A p type Si collector layer is directly provided on the silicon carbide substrate to face the second surface of the n type drift layer. | 06-27-2013 |
20130171778 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - On a single-crystal substrate, a drift layer is formed. The drift layer has a first surface facing the single-crystal substrate, and a second surface opposite to the first surface, is made of silicon carbide, and has first conductivity type. On the second surface of the drift layer, a collector layer made of silicon carbide and having second conductivity type is formed. By removing the single-crystal substrate, the first surface of the drift layer is exposed. A body region and an emitter region are formed. The body region is disposed in the first surface of the drift layer, and has the second conductivity type different from the first conductivity type. The emitter region is disposed on the body region, is separated from the drift layer by the body region, and has first conductivity type. | 07-04-2013 |
20130177035 | NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE - A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer. | 07-11-2013 |
20130181229 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A MOSFET includes: a substrate having a first trench formed therein, the first trench opening on a side of one main surface; a gate insulating film; and a gate electrode. The substrate includes an n type source region, a p type body region, an n type drift region, and a p type deep region making contact with the body region and extending to a region deeper than the first trench. The first trench is formed such that a distance between the wall surface and the deep region increases with increasing distance from the main surface of the substrate. | 07-18-2013 |
20130181801 | REACTOR - To provide a reactor with which resin can fully be packed between a core and a coil with ease, and in which the core can easily be handled when the reactor is manufactured. | 07-18-2013 |
20130182734 | LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE - A laser diode includes: a semiconductor base made of a hexagonal Group III nitride semiconductor and having a semi-polar plane oriented along a {2, 0, −2, 1} direction; an epitaxial layer including a light-emitting layer forming an optical waveguide of laser light, and formed on the semi-polar plane of the semiconductor base, the epitaxial layer allowing a propagation direction of the laser light to be tilted, in an optical waveguide plane, at an angle ranging from about 8° to about 12° or about 18° to about 29° both inclusive with respect to a direction of projection of a c axis onto the optical waveguide plane, the optical waveguide plane including the propagation direction of the laser light and being parallel to the semi-polar plane; two resonator facets; a first electrode; and a second electrode. | 07-18-2013 |
20130183778 | METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE - A method for producing an integrated optical device includes the steps of growing a first stacked semiconductor layer including a first optical waveguiding layer, a first cladding layer, and a side-etching layer; etching the first stacked semiconductor layer through a first etching mask; growing, a second stacked semiconductor layer including a second optical waveguiding layer and a second cladding layer through the first etching mask; and forming a reverse-mesa ridge structure by etching the first and second cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming an overhang by etching the side-etching layer by wet etching. In the step of growing the second stacked semiconductor layer, the second cladding layer is grown at a lower growth temperature and a higher V/III ratio comparing to those in the growth of the second optical waveguiding layer. | 07-18-2013 |
20130183820 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film into the silicon carbide layer. | 07-18-2013 |
20130193447 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes an insulation film, and a silicon carbide layer having a surface covered with the insulation film. The surface includes a first region. The first region has a first plane orientation at least partially. The first plane orientation is any of a (0-33-8) plane, (30-3-8) plane, (-330-8) plane, (03-3-8) plane, (-303-8) plane, and (3-30-8) plane. | 08-01-2013 |
20130195133 | DRIVER CIRCUIT FOR LASER DIODE OUTPUTTING PRE-EMPHASIZED SIGNAL - A shunt driver for driving an LD is disclosed. The shunt driver has the push-pull arrangement with the high side driver and the low side driver. The high side driver is driven by a positive phase signal superposed with a negative phase signal with a delay and a less amplitude with respect to the positive phase signal. The low side driver is driven by a negative phase signal superposed with a positive signal with a delay and a less amplitude compared to the positive phases signal. Adjusting the magnitude of the superposed signals, the driving current for the LD has the peaking in the rising and falling edges thereof. | 08-01-2013 |
Patent application number | Description | Published |
20130025794 | MANUFACTURING APPARATUS FOR PROTECTION SLEEVE - A protection sleeve includes a heat shrinkable tube and an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube. The heat shrinkable tube, the adhesive tube, and the reinforcing rod are adhered together in a section spanning across a lengthwise section of the heat shrinkable tube. A protection sleeve manufacturing apparatus includes a jig for securing protection sleeves and a heating device. The jig is contrived to hold a plurality of protection sleeves (each including a heat shrinkable tube, an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube) in a parallel arrangement with spaces in-between. The heating device includes a plurality of hot air vents, means for setting a first distance between the jig and the hot air vents, and means for setting the jig and the hot air vents to a second distance that is closer than the first distance. | 01-31-2013 |
20130032273 | METHOD FOR MANUFACTURING PROTECTION SLEEVES - A protection sleeve includes a heat shrinkable tube and an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube. The heat shrinkable tube, the adhesive tube, and the reinforcing rod are adhered together in a section spanning across a lengthwise section of the heat shrinkable tube. A protection sleeve manufacturing apparatus includes a jig for securing protection sleeves and a heating device. The jig is contrived to hold a plurality of protection sleeves (each including a heat shrinkable tube, an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube) in a parallel arrangement with spaces in-between. The heating device includes a plurality of hot air vents, means for setting a first distance between the jig and the hot air vents, and means for setting the jig and the hot air vents to a second distance that is closer than the first distance. | 02-07-2013 |
20130062117 | TERMINAL CONNECTOR AND ELECTRIC WIRE WITH TERMINAL CONNECTOR - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has an opening edge. The opening edge of the recess includes first opening edges that are parallel to each other. The first opening edges are arranged to overlap with each other in the extending direction of the electric wire so that the first opening edges are present over the entire length of all over the plurality of the recesses on the crimping portion in the extending direction of the electric wire. | 03-14-2013 |
20130075023 | METHOD FOR BONDING THIN FILM PIECE - A method for bonding a thin film piece includes: forming a support layer on each upper face of a plurality of thin film pieces; fixing the plurality of thin film pieces to a first substrate through a temporary fixing layer provided on a lower face of the first substrate so that the temporary fixing layer contacts with the upper face and at least a part of a side face of each support layer; bonding a lower face of the plurality of thin film pieces to a second substrate; and removing the first substrate from the plurality of thin film pieces by removing at least one of the support layer and the temporary fixing layer. | 03-28-2013 |
20130075753 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate comprised of gallium nitride; an active layer provided on the substrate; a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (In | 03-28-2013 |
20130075867 | METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE - There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains. | 03-28-2013 |
20130092617 | WATER TREATMENT UNIT AND WATER TREATMENT APPARATUS - A water treatment unit is usable in a water treatment apparatus that performs water treatment using a reverse osmosis membrane. The water treatment unit includes: a casing; a separation membrane mounted in the casing and bent into a pleated shape; a reinforcing member attached to the separation membrane and having a function of reinforcing the separation membrane; a rotating mechanism rotating the separation membrane; and a cleaning device capable of cleaning the separation membrane. The separation membrane has a plurality of island-like portions and a plurality of fiber-like portions extending from the island-like portions and having a width smaller than that of the island-like portions, and an area of the fiber-like portions at a membrane surface is set to be larger than that of the island-like portions. | 04-18-2013 |
20130092618 | SEPARATION MEMBRANE, WATER TREATMENT UNIT AND WATER TREATMENT APPARATUS - A separation membrane is usable in a water treatment apparatus that performs water treatment using a reverse osmosis membrane. The separation membrane includes a plurality of island-like portions and a plurality of fiber-like portions extending from the island-like portions and having a width smaller than that of the island-like portions, and an area of the fiber-like portions at a membrane surface is set to be larger than that of the island-like portions. A water treatment unit includes: a casing; the aforementioned separation membrane mounted in the casing; and a cleaning device attached to the casing and capable of cleaning the separation membrane. The water treatment apparatus includes: a first water treatment unit capable of performing pretreatment of water to be treated; and a second water treatment unit capable of performing main treatment of the water to be treated. The first water treatment unit includes the aforementioned water treatment unit. | 04-18-2013 |
20130092956 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - Single crystal substrates are made of silicon carbide, and each have a first front-side surface and a first backside surface opposite to each other. A support substrate has a second front-side surface and a second backside surface opposite to each other. A connection layer has silicon carbide as a main component, and lies between the single crystal substrates and the support substrate for connecting each of the first backside surfaces and the second front-side surface such that each of the first backside surfaces faces the second front-side surface. | 04-18-2013 |
20130095285 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more. | 04-18-2013 |
20130099252 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot composed of single crystal silicon carbide, obtaining a silicon carbide substrate by slicing the ingot, and polishing a surface of the silicon carbide substrate. In the step of obtaining a silicon carbide substrate, the ingot is sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {0001} plane. In the step of polishing a surface of the silicon carbide substrate, at least one of main surfaces of the silicon carbide substrate is polished while the entire surface of at least one of the main surfaces of the silicon carbide substrate is in contact with a polishing surface. | 04-25-2013 |
20130121699 | PON SYSTEM AND TERMINAL OPERATION REGISTERING METHOD - In a PON system in which communication is performed at a plurality of types of transmission rate (L, M, and H) in an upstream direction from a plurality of terminals connected to a station apparatus through optical fibers, within a discovery period for allowing an unregistered terminal to be recognized by station apparatus, the terminal makes a discovery response at one type of transmission rate (L). With this configuration, station apparatus can wait for a discovery response with a receive function being allowed to support transmission rate (L). | 05-16-2013 |
20130121873 | METHOD FOR PRODUCING ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - An object is to provide a method for producing an aluminum structure using a porous resin body having a three-dimensional network structure, with which an aluminum structure having a low impurity content can be formed, and in particular, a porous aluminum body having a large area can be obtained. | 05-16-2013 |
20130122375 | POROUS METAL BODY, AND ELECTRODE MATERIAL AND BATTERY BOTH INCORPORATING THE BODY - The invention offers a porous metal body that has a three-dimensional network structure, that has less reduction in performance during the pressing and compressing steps when an electrode material is produced, and that can be used as an electrode material capable of achieving good electric properties, a method of producing the porous metal body, and an electrode material and a battery both incorporating the foregoing porous metal body. A porous metal body has a skeleton structure that is formed of a metal layer, that has a three-dimensional network structure, and that has an end portion provided with a nearly spherical portion. It is desirable that the metal be aluminum and that the nearly spherical portion have a diameter larger than the outer diameter of the skeleton structure. | 05-16-2013 |
20130122696 | METHOD OF MANUFACTURING SCHOTTKY BARRIER DIODE - A silicon carbide substrate having a main face is prepared. By applying thermal oxidation to the main face of the silicon carbide substrate at a first temperature, an oxide film is formed on the main face. After the oxide film is formed, heat treatment is applied to the silicon carbide substrate at a second temperature higher than the first temperature. An opening exposing a portion of the main face is formed at the oxide film. A Schottky electrode is formed on the main face exposed by the opening. | 05-16-2013 |
20130126231 | ALUMINUM ALLOY WIRE - An aluminum alloy, an aluminum alloy wire, an aluminum alloy stranded wire, a covered electric wire, and a wire harness that are of high toughness and high electrical conductivity, and a method of manufacturing an aluminum alloy wire are provided. The aluminum alloy wire contains not less than 0.005% and not more than 2.2% by mass of Fe, and a remainder including Al and an impurity. It may further contain not less than 0.005% and not more than 1.0% by mass in total of at least one additive element selected from Mg, Si, Cu, Zn, Ni, Mn, Ag, Cr, and Zr. The Al alloy wire has an electrical conductivity of not less than 58% IACS and an elongation of not less than 10%. The Al alloy wire is manufactured through the successive steps of casting, rolling, wiredrawing, and softening treatment. The softening treatment can be performed to provide an excellent toughness such as elongation and impact resistance and thereby reduce fracture of the electric wire in the vicinity of a terminal portion when the wire harness is installed. | 05-23-2013 |
20130129277 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a substrate including a first portion, a second portion, and a third portion; a first waveguide provided on the first portion, the first waveguide including a base portion and a ridge portion provided on the base portion, the base portion containing a first core layer; a second waveguide provided on the second portion, the second waveguide including a first stripe-shaped mesa containing a second core layer; and a third waveguide provided on the third portion, the third waveguide including a second stripe-shaped mesa containing a third core layer. The first stripe-shaped mesa is connected to the base portion and the ridge portion. The first stripe-shaped mesa is connected to the second stripe-shaped mesa. The second core layer is formed integrally with the first core layer. The third core layer is joined to the second core layer by a butt-joint method. | 05-23-2013 |
20130129278 | INTEGRATED SEMICONDUCTOR DEVICE - An integrated semiconductor device includes a substrate including first, second and third portions; a first waveguide provided on the first portion, the first waveguide including a first base portion containing a first core layer, and a first ridge portion provided on the first base portion; a second waveguide provided on the second portion, the second waveguide including a second base portion containing a second core layer and a second ridge portion provided on the second base portion; and a third waveguide provided on the third portion, the third waveguide including a stripe-shaped mesa containing a third core layer. The second base portion is connected to the first base portion. The second ridge portion is connected to the first ridge portion and the stripe-shaped mesa. The second core layer is formed integrally with the third core layer and is joined to the first core layer by a butt-joint method. | 05-23-2013 |
20130129292 | BI-DIRECTIONAL OPTICAL COMMUNICATION METHOD AND MULTI-CORE OPTICAL FIBER - The present invention relates to a multi-core optical fiber applicable to an optical transmission line of bi-directional optical communication and a bi-directional optical communication method. The multi-core optical fiber has plural cores in a common cladding. Signal light is transmitted in a first direction through an arbitrary core among the cores, whereas the signal light is transmitted in a second direction opposite to a first direction, through all the nearest-neighbor cores to the arbitrary core. | 05-23-2013 |
20130132632 | OPTICAL TRANSCEIVER HAVING RESET SEQUENCE - An electronic apparatus is disclosed where the apparatus provides the I2C bus and enables to resume the I2C bus even after the apparatus receives external RESET independent of the status of the I2C communication. A circuit unit communicating with the controller by the I2C bus, which is necessary to be reset, is further coupled with the controller by an internal RESET. The controller, receiving the external RESET, first completes the communication on the I2C bus, then sends the internal RESET to the circuit unit, finally resets itself. | 05-23-2013 |
20130136458 | OPTICAL TRANSCEIVER HAVING ENHANCED EMI TOLERANCE - An optical transceiver that attenuates the EMI radiation leaked therefrom is disclosed. The optical transceiver includes a top cover and the bottom base to form a cavity into which a TOSA, a ROSA, and a circuit are set. At least one of the top cover and the bottom base provides a combed structure in a rear portion of the optical transceiver, where the combed structure has a plurality of T-shaped fins to attenuate the EMI radiation. | 05-30-2013 |
20130137198 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a silicon carbide substrate having a first main surface and a second main surface. On the first main surface, an electrode is formed. The silicon carbide substrate has a hexagonal crystal structure. The first main surface has an off angle of ±8° or smaller relative to a {0001} plane. The first main surface has such a property that when irradiated with excitation light having energy equal to or greater than a band gap of silicon carbide, luminous regions in a wavelength range of 750 nm or greater are generated in the first main surface at a density of 1×10 | 05-30-2013 |
20130142487 | MULTI-CORE OPTICAL FIBER INTERCONNECTION STRUCTURE AND METHOD FOR MANUFACTURING MULTI-CORE OPTICAL FIBER INTERCONNECTION STRUCTURE - A multi-core optical fiber interconnection structure has a first multi-core optical fiber with a slanted end face and a second multi-core optical fiber with a slanted end face. In a state in which the slanted end faces face each other, each of cores of the first multi-core optical fiber is optically coupled to a corresponding one of cores of the second multi-core optical fiber in a one-to-one correspondence relation. The facing condition between the slanted end faces is adjusted so as to minimize variation in core pitches of pairs of the cores each in the one-to-one correspondence relation. | 06-06-2013 |
20130142522 | DIFFERENTIAL CIRCUIT COMPENSATED WITH SELF-HEATING EFFECT OF ACTIVE DEVICE - A differential circuit with a function to compensate unevenness observed in the differential gain thereof is disclosed. The differential circuit provides a low-pass filter in one of the paired transistors not receiving the input signal in addition to another low-pass filter that provides an average of output signals as a reference level of the differential circuit. The cut-off frequency of the filter is preferably set to be equal to the transition frequency at which the self-heating effect explicitly influences the trans-conductance of the transistor. | 06-06-2013 |
20130148265 | ELECTRODE FOR ELECTRIC STORAGE DEVICE, ELECTRIC STORAGE DEVICE AND MANUFACTURING METHOD OF ELECTRODE FOR ELECTRIC STORAGE DEVICE - An electrode for an electric storage device includes at least an active material selected from the group consisting of a carbon nanotube, activated carbon, hard carbon, graphite, graphene and a carbon nanohorn; an ionic liquid; and a three-dimensional network metal porous body. | 06-13-2013 |
20130148676 | WAVELENGTH MONITOR, WAVELENGTH LOCKABLE LASER DIODE AND METHOD FOR LOCKING EMISSION WAVELENGTH OF LASER DIODE - A wavelength monitor monolithically integrated with a tunable LD is disclosed. The wavelength monitor includes at least two filters, each having a periodic transmission spectrum but a period between nearest neighbor periods is different from the other. A transmittance of the first filter and another transmittance of the second filter at a grid wavelength attributed to the WDM system forms a combination which is specific to the grid wavelength but different from other combinations at other grid wavelengths. | 06-13-2013 |
20130148681 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE - There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed. | 06-13-2013 |
20130148934 | OPTICAL FIBER, OPTICAL TRANSMISSION SYSTEM, AND METHOD OF MAKING OPTICAL FIBER - Provided is an inexpensive low-loss optical fiber suitably used in an optical transmission network. An optical fiber includes a core, an optical cladding, and a jacket. The core has a relative refractive index difference between 0.2% and 0.32% and has a refractive index volume between 9%·μm | 06-13-2013 |
20130156060 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 06-20-2013 |
20130161646 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 06-27-2013 |
20130161647 | INGOT, SUBSTRATE, AND SUBSTRATE GROUP - An ingot, a substrate, and a substrate group are obtained each of which is made of silicon carbide and is capable of suppressing variation of characteristics of semiconductor devices. The ingot is made of single-crystal silicon carbide, and has p type impurity. The ingot has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot has an average carrier density of 1×10 | 06-27-2013 |
20130163935 | CONNECTOR-INCORPORATED MULTI-CORE OPTICAL FIBER - The present invention relates to a connector-incorporated multi-core optical fiber with a high optical transmission spatial density and with an excellent bending property. An intermediate region of a fiber body of the connector-incorporated multi-core optical fiber is a region located between bundle sections in which a plurality of optical fibers are integrated by a coupling material, and the coupling material is removed in part from this intermediate region, thereby to expose parts of the respective optical fibers located in the intermediate region. | 06-27-2013 |
20130170804 | MULTI-CORE OPTICAL FIBER - The present invention relates to a multi-core optical fiber that can realize suppression of crosstalk on an easy and inexpensive basis. The multi-core optical fiber is provided with a plurality of core portions extending along a central axis of the fiber, a common cladding portion integrally holding the core portions inside, a coating layer surrounding the common cladding portion, and a bend applying portion. The bend applying portion, as an example, is provided on a partial region of an outer periphery of the coating layer and applies bending stress to a glass region. | 07-04-2013 |
20130177037 | SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material. | 07-11-2013 |
20130180777 | WIRE HARNESS AND WIRE FITTING - A wire harness including a wire fitting is provided that maintains the length of the portion of the wire bundle that extends to the outside of the wire fitting reliably at a tolerance range without impeding the freedom of bending the wire bundle. A wire harness includes a wire fitting having a base and a cover covering a portion of a wire bundle together with the base. The base is provided with a protrusion that pierces the insulated wires at a portion further to an outer edge of the base than a portion of the wire bundle that is tied together by a first tie member, the wire bundle extending from the base to an outside of the base. | 07-18-2013 |
20130182733 | WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE - A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction. | 07-18-2013 |
20130182736 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material. | 07-18-2013 |
20130182992 | METHOD TO DRIVE SEMICONDUCTOR MACH-ZEHNDER MODULATOR - A Mach-Zehnder (MZ) modulator made of semiconductor material and a method to drive the MZ-modulator are disclosed. The MZ-modulator includes a pair of arms to vary the phase of the optical beam propagating therein. One of the arms further provides the phase presetter that varies the phase of the optical beam by π. The arms are driven by modulation signals complementary to each other but with the DC bias equal to each other. | 07-18-2013 |
20130183033 | OPTICAL TRANSMISSION SYSTEM - The present invention relates to an optical transmission system to which a spatial multiplexing optical fiber is applied as a transmission line. The optical transmission system performs optical transmission using the spatial multiplexing optical fiber as an optical transmission line for transmission of signal light. Namely, the optical transmission is carried out in accordance with a modulation format in which a Q-factor of the signal light propagating in certain propagation mode light propagating in the spatial multiplexing optical fiber and a ratio of a signal light power to a square of the shortest distance between modulation symbols in the modulation format satisfy a predetermined relational expression. | 07-18-2013 |
20130183780 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes a first etching step of etching a stacked semiconductor layer with a first mask to form a stripe-shaped optical waveguide, the stripe-shaped optical waveguide including first and second stripe-shaped optical waveguides formed on first and second regions of a substrate, respectively; a step of forming a second mask on the stacked semiconductor layer with the first mask left; and a second etching step of etching the stacked semiconductor layer on the first region with the first and second masks. The second mask has a pattern for forming a mesa structure and includes an opening including first and second opening edges remote from side surfaces of the first stripe-shaped optical waveguide. The mesa structure is formed of the first stripe-shaped optical waveguide in the second etching step. The second stripe-shaped optical waveguide formed in the first etching step has a ridge structure. | 07-18-2013 |
20130183783 | METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE - A method for producing an integrated optical device includes the steps of preparing a substrate including first and second regions; growing, on the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers, and a first etch-stop layer between the first and second cladding layers; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer, third and fourth cladding layers, and a second etch-stop layer between the third and fourth cladding layers; and forming a ridge structure by etching the second and fourth cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming a first overhang between the first and second cladding layers by selectively etching the first etch-stop layer by wet etching. | 07-18-2013 |
20130183784 | METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE - A method for producing an integrated optical device includes the steps of growing, on a substrate including first and second regions, a first stacked semiconductor layer, a first cladding layer, and a side-etching layer; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region, a second stacked semiconductor layer and a second cladding layer; growing a third cladding layer and a contact layer on the first and second stacked semiconductor layers; and forming a ridge structure. The step of etching the first stacked semiconductor layer includes a step of forming an overhang between the first cladding layer and the first etching mask. The step of forming a ridge structure includes first, second, and third wet-etching steps in which the third cladding layer, the side-etching layer and the first and second cladding layers are selectively etched, respectively. | 07-18-2013 |
20130183813 | METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method for manufacturing an optical semiconductor device includes a step of forming a stacked semiconductor layer on a substrate, the stacked semiconductor layer including a plurality of semiconductor layers; a step of forming a mask on a top layer of the stacked semiconductor layer, the mask covering a portion of the top layer; an exposing step of exposing the top layer of the stacked semiconductor layer to an oxygen-containing atmosphere; after the exposing step, a heating step of heating the stacked semiconductor layer to a temperature of 250° C. or more; and after the heating step, a step of forming a semiconductor mesa in the stacked semiconductor layer, the semiconductor mesa being formed by etching the stacked semiconductor layer by a dry etching method using the mask. The top layer of the plurality of semiconductor layers of the stacked semiconductor layer contains arsenic. | 07-18-2013 |
20130188917 | OPTICAL FIBER AND OPTICAL FIBER PREFORM - An optical fiber containing an alkali metal element and exhibiting low attenuation as well as excellent radiation resistance is provided. The optical fiber of the present invention has a core region and a cladding region enclosing the core region. The core region contains alkali metal elements by an average concentration of 0.2 atomic ppm or more. The attenuation at a wavelength of 1550 nm after irradiating with the radiation of 0.10 Gy or more of cumulative absorbed dose increases by 0.02 dB/km or less as compared with the attenuation exhibited prior to radiation exposure. | 07-25-2013 |
20130195411 | MULTI-CORE OPTICAL FIBER - A multi-core optical fiber | 08-01-2013 |