Patent application number | Description | Published |
20110243634 | PRINTING SYSTEM, SHEET PROCESSING SYSTEM, AND SHEET-PATH SWITCHING APPARATUS - In a printing system capable of selectively performing duplex printing and simplex printing, a switching unit switches a sheet travel path between a first path and a second path parallel to each other, and reverses the sides of a sheet that passes along the first path. In the duplex printing, a sheet is printed on a first side by a first printing apparatus, reversed by the switching unit, and printed on a second side reverse of the first side by a second printing apparatus. In the simplex printing, only one side of a sheet is printed by the first printing apparatus and/or second printing apparatus. First and second input units introduce sheets into the first and second paths, respectively; and first and second output units receive printed sheets that have traveled along the first and/or second paths. | 10-06-2011 |
20110243635 | PRINTING SYSTEM, SHEET PROCESSING SYSTEM, AND SHEET DIRECTION CHANGINGAPPARATUS - In a printing system capable of selectively performing duplex printing and simplex printing, a first input unit and a second input unit are adjacent to each other. A first output unit and a second output unit are adjacent to each other. In duplex printing, a sheet supplied from the first input unit is printed on a first side thereof in a first printing apparatus and the traveling direction thereof is changed at a changing unit while the sheet is reversed, and then the sheet is printed on a second side thereof in a second printing apparatus and output to the second output unit. In simplex printing, a sheet supplied from the first or second input unit is printed on one side thereof and the traveling direction thereof is changed at the changing unit, and then the sheet is output to the first or second output unit. | 10-06-2011 |
20110279509 | APPARATUS AND METHOD OF PRINTING - A printing apparatus using a print head of an inkjet-type, in which, if a splice is detected during printing, an area of a following part of a continuous sheet that follows the splice is used to perform image-quality adjustment such as color shading adjustment, an adjustment of a gap between the print head and a sheet, and a color registration adjustment of the print head. | 11-17-2011 |
20130120487 | PRINTING APPARATUS AND PRINTING METHOD - A printing apparatus includes a conveyance unit, a printing unit, a detection unit, and a control unit. The conveyance unit conveys a sheet that is a continuous sheet. The printing unit prints an image onto the conveyed sheet. The detection unit detects a splice of the conveyed sheet. A following sheet area follows and is continuous from the splice. The control unit adjusts, in response to the detection unit detecting a splice of the conveyed sheet, the conveyance by the conveyance unit of the following sheet area depending on conveyance characteristics of the following sheet area. | 05-16-2013 |
Patent application number | Description | Published |
20120128372 | OPTICAL LINE TERMINATION, PON SYSTEM, AND DATA RECEPTION PROCESSING METHOD - An optical line termination includes a deserializer that parallelizes burst data received from a termination device, a fixed-pattern generating unit that generates fixed pattern data that is a predetermined fixed data, and a data selecting unit that selects either the fixed pattern data or the burst data based on a data-head instruction signal indicating a head of the burst data and a data-end instruction signal indicating an end of the burst data, and inputs the selected data to a deserializer as data to be parallelized. | 05-24-2012 |
20120148246 | PON SYSTEM, SUBSCRIBER-SIDE TERMINAL APPARATUS, STATION-SIDE TERMINAL APPARATUS, AND POWER SAVING METHOD - In a PON system, an ONU includes a receive buffer that stores therein a signal in a downstream direction transmitted from an OLT and a PON control unit that controls transition to a power-saving state and transition to a normal state for the reception buffer. The OLT includes a transmission buffer that stores transmission data to be transmitted to the ONU and the PON control unit that transmits the downstream power-saving-state transition request that requests the ONU to transition to the downstream power-saving state when it is determined that transmission data addressed to the ONU is not present in the transmission buffer. The PON control unit sets the reception buffer to a power-saving state for a predetermined downstream sleep time requested based on the downstream power-saving-state transition request. | 06-14-2012 |
20130129354 | LOGICAL-LINK MANAGEMENT METHOD AND COMMUNICATION DEVICE - A logical-link management method to be executed in an optical communication system including a station side device (OLT) and a subscriber side device (ONU) that is capable of setting a plurality of logical links together with the OLT, in which the OLT transmits a signal for managing the ONU via a single logical link. The logical-link management method includes a status monitoring of the OLT monitoring whether there is a change in a connection status of the logical link between the OLT and the ONU and a link resetting of the OLT resetting, when a change of the connection status of the logical link is detected at the status monitoring, a device management logical link used for transmitting the signal for managing the ONU according to a predetermined procedure. | 05-23-2013 |
20130177314 | RELAY DEVICE, STATION-SIDE OPTICAL COMMUNICATION DEVICE, COMMUNICATION SYSTEM, AND BANDWIDTH ALLOCATION METHOD - A relay device that relays communication between a low-speed communication device performing uplink 1 G transfer and a high-speed communication device performing uplink 10 G transfer and a station-side optical communication device, wherein the relay device includes a low-speed reception unit that converts an optical signal received from the low-speed communication device to an electric signal, a buffer that buffers the electric signal, and a high-speed transmission unit that transmits, to the station-side optical communication device, a bandwidth allocation request requesting bandwidth allocation for communication from its own unit to the station-side optical communication device, and within a transmission permitted time period allocated by the station-side optical communication device, reads an electric signal stored in the buffer, converts the electric signal to an optical signal having a communication speed of 10 G, and transmits the optical signal. | 07-11-2013 |
Patent application number | Description | Published |
20080265863 | REFERENCE CURRENT CIRCUIT FOR ADJUSTING ITS OUTPUT CURRENT AT A LOW POWER-SUPPLY VOLTAGE - A reference current circuit includes a differential amplifier amplifying a difference in potential between a reference voltage and a first node and outputting the amplified potential difference to a second node, and adjusting transistors connected between a supply voltage and the first node. The reference current circuit further includes switches provided correspondingly to the adjusting transistors to apply a voltage of the second node to control electrodes of the adjusting transistors in response to control signals that are respectively input to the switches. The reference current circuit further includes a resistance connected between the first node and a common potential, and an output transistor having its conduction state responsive to the voltage of the second node for controlling a current supplied from the supply voltage to a load. | 10-30-2008 |
20080315857 | REFERENCE CURRENT GENERATING APPARATUS - A reference current generating apparatus is provided which is capable of generating a reference current having no temperature dependency, without increasing a layout area. The reference current generating apparatus includes a constant current generating circuit having a differential amplifier, a constant current generating circuit connected to the constant current generating circuit and having a differential amplifier, and an output circuit connected to the constant current generating circuit for outputting first and second reference voltages. The constant current generating circuit generates a reference current by enabling selection of a mirror ratio of a transistor that conducts summing of a constant current proportional to a thermal voltage, and by enabling switching of a dividing voltage from a resistor to an input of the differential amplifier, to generate a constant current proportional to a diode voltage via a high impedance MOS gate. | 12-25-2008 |
20100026540 | DA CONVERTER - The present invention provides a DA converter that gives good linearity of output voltage of an IV conversion amplifier, and improves THD characteristics. In the DA converter, a current path x | 02-04-2010 |
20120176160 | SEMICONDUCTOR CIRCUIT, BATTERY CELL MONITORING SYSTEM, COMPUTER READABLE MEDIUM STORING DIAGNOSTIC PROGRAM AND DIAGNOSTIC METHOD - The present invention provides a semiconductor circuit including: a comparator section that compares discharge sections, each including a first signal line connected to a high potential side of each of a plurality of battery cells that are connected in series, a second signal line connected to a low potential side of each of the plurality of battery cells, a resistance element provided between the first signal line and the second signal line, and a discharge switching element connected in series to the resistance element, wherein the comparator section compares a threshold voltage, set according to a potential difference between a potential of the first signal line and a potential of the second signal line, with a voltage according to a potential between the resistance element and the discharge switching element. | 07-12-2012 |
20120179411 | SEMICONDUCTOR CIRCUIT, SEMICONDUCTOR DEVICE, LINE BREAK DETECTION METHOD, AND COMPUTER READABLE MEDIUM STORING LINE BREAK DETECTION PROGRAM - When line break detection of signal line Ln is carried out, potential smaller than signal line Ln−1 having lower potential than signal line Ln is supplied to signal line Ln, and potentials of signal line Ln and signal line Ln−1 are compared. If potential of signal line Lc>signal line Li, it is detected no line break, and if signal line Lcsignal line Li, it is detected that a line break exists. | 07-12-2012 |
20120181994 | BOOSTING SYSTEM, DIAGNOSING METHOD, AND COMPUTER READABLE MEDIUM STORING DIAGNOSING PROGRAM - The present invention provides a boosting system, a diagnosing method and a diagnosing program, that may diagnose a boosting section while suppressing consumption of electric power and current, and without being carrying out by a CPU. Namely, during an initializing operation, difference between power supply voltage and own threshold voltage charges capacitor C | 07-19-2012 |
20130069597 | SEMICONDUCTOR CIRCUIT, BATTERY MONITORING SYSTEM, AND CONTROL METHOD - A semiconductor circuit is provided. The semiconductor circuit includes: a drive component that includes first switching elements connected to discharge switching elements and resistive elements; and a drawing component. The first switching elements interconnect, in accordance with a drive time of the discharge switching elements, drive current sources that supply charge to control signal lines and the control signal lines. The drawing component draws charge with draw current sources in accordance with a draw time in which the drawing component draws the charge supplied from the drive component. | 03-21-2013 |
Patent application number | Description | Published |
20120071603 | METHOD OF PRODUCTION OF RADIAL CONJUGATED DIENE POLYMER - An alkali metal-reacted aromatic compound which has three or more carbon atoms which are directly bonded to alkali metal atoms and aromatic rings in one molecule is used as a polymerization initiator to polymerize a monomer mixture which is contains at least one conjugated diene compound to thereby produce a radial conjugated diene polymer. Further, active ends of the polymer having active ends which is obtained by this method is made to react with a modifier which can react with the active ends to thereby produce an end-modified radial conjugated diene polymer. According to the present invention, it is possible to provide a method of production of the radial conjugated diene polymer which gives a high degree of freedom of polymer design and easy control of the polymer structure. | 03-22-2012 |
20130267649 | CONJUGATED DIENE RUBBER, RUBBER COMPOSITION, CROSS-LINKED RUBBER, AND TIRE - A conjugated diene rubber of the present invention is prepared from conjugated diene polymer chains, wherein the conjugated diene polymer chains each has an active end at one end and an isoprene block at least at the other end, the isoprene block contains 70 wt % or more isoprene monomer units, and the active ends of at least part of the conjugated diene polymer chains are modified with a compound having a >C═O group as a functional group. This provides (i) a tire that has an excellent strength, excellent low-heat buildup property, and excellent wet grip property and (ii) a rubber composition and a conjugated diene rubber that are suitably used to produce the tire. | 10-10-2013 |
20130281615 | CYCLOPENTENE RING-OPENING POLYMER AND METHOD OF PRODUCTION OF SAME - A cyclopentene ring-opening polymer which has hydroxy groups at the polymer chain terminal ends is produced, then the hydroxy groups of the cyclopentene ring-opening polymer and isocyanate groups of a compound containing alkoxysilyl groups and isocyanate groups in its molecule are made to react to thereby produce a cyclopentene ring-opening polymer which contains structures at the polymer chain terminal ends where the polymer chains and groups including alkoxysilyl groups are bonded through urethane bond groups and which has a weight average molecular weight of 100,000 to 1,000,000. | 10-24-2013 |
20140364559 | METHOD OF PRODUCTION OF MODIFIED CONJUGATED DIENE-BASED RUBBER - A method of production of modified conjugated diene-based rubber comprising a steps of using, as a polymerization initiator, an alkali metalated aromatic compound which has three or more carbon atoms which are directly bonded to alkali metal atoms and aromatic rings in one molecule so as to polymerize a monomer which contains at least a conjugated diene compound and reacting a compound of the following general formula (I) with an active ends of the obtained polymer is provided. | 12-11-2014 |
20160002382 | CYCLOPENTENE RING-OPENING COPOLYMER, METHOD FOR PRODUCING SAME, AND RUBBER COMPOSITION - [Problem] To provide a cyclopentene ring-opening copolymer used in a rubber composition for tires having excellent wet grip performance and low heat buildup; and a method for producing the cyclopentene ring-opening copolymer. To further provide a rubber composition obtained by using the cyclopentene ring-opening copolymer. [Solution] This cyclopentene ring-opening copolymer comprises cyclopentene and a cyclic olefin containing an aromatic ring; the content of the aromatic ring with respect to the total weight of the copolymer is 10 to 40 wt %; and the weight average molecular weight (Mw) is 200,000 to 1,000,000. The cyclopentene ring-opening copolymer alternatively comprises cyclopentene and a norbornene compound; the weight ratio of cyclopentene-derived structural units to all repeating structural units in the copolymer is 40 to 90 wt %, and the weight ratio of norbornene compound-derived structural units is 10 to 60 wt %; and the weight average molecular weight (Mw) is 200,000 to 1,000,000. | 01-07-2016 |
Patent application number | Description | Published |
20090261301 | Method for growing silicon single crystal, and silicon wafer - A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits. | 10-22-2009 |
20090293799 | Method for growing silicon single crystal, and silicon wafer - A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits. | 12-03-2009 |
20100127354 | SILICON SINGLE CRYSTAL AND METHOD FOR GROWING THEREOF, AND SILICON WAFER AND METHOD FOR MANUFACTURING THEREOF - A method for growing a silicon single crystal having a hydrogen defect density of equal to or less than 0.003 pieces/cm | 05-27-2010 |
20100178753 | SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface. | 07-15-2010 |
20100288184 | SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT - A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×10 | 11-18-2010 |
20110052923 | METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER - An epitaxial wafer is produced by a method comprising steps of growing a silicon single crystal ingot having a given oxygen concentration through Czochralski method, cutting out a wafer from the silicon single crystal ingot, subjecting the wafer to a heat treatment at a given temperature for a given time, and epitaxially growing the wafer. | 03-03-2011 |