Patent application number | Description | Published |
20090079001 | MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode. | 03-26-2009 |
20090079032 | METHOD OF FORMING A HIGH CAPACITANCE DIODE AND STRUCTURE THEREFOR - In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device. | 03-26-2009 |
20090315142 | Semiconductor component and method of manufacture - A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates. | 12-24-2009 |
20100006889 | LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode. | 01-14-2010 |
20100060349 | METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR - In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance. | 03-11-2010 |
20100072573 | METHOD OF FORMING A HIGH CAPACITANCE DIODE AND STRUCTURE THEREFOR - In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device. | 03-25-2010 |
20110021009 | LOW CLAMP VOLTAGE ESD METHOD - In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode. | 01-27-2011 |
20110027961 | Semiconductor Component and Method of Manufacture - A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates. | 02-03-2011 |
20110073988 | Semiconductor Component and Method of Manufacture - A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates. | 03-31-2011 |
20110079876 | Method of Manufacturing a Semiconductor Component and Structure - A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures. | 04-07-2011 |
20110198728 | INTEGRATED SEMICONDUCTOR DEVICE - In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance. | 08-18-2011 |
20110291231 | METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE - A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke. | 12-01-2011 |
20120074846 | Semiconductor Component and Method - A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits. | 03-29-2012 |
20120080769 | ESD DEVICE AND METHOD - A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode. | 04-05-2012 |
20120080803 | METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE - A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke. | 04-05-2012 |
20120142171 | METHOD OF FORMING A HIGH CAPACITANCE DIODE - In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device. | 06-07-2012 |
20140103484 | ELECTROSTATIC DISCHARGE DEVICES AND METHOD OF MAKING THE SAME - In one embodiment, electrostatic discharge (ESD) devices are disclosed. | 04-17-2014 |
20140242771 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode. | 08-28-2014 |
20140308795 | METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE - A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke. | 10-16-2014 |