Patent application number | Description | Published |
20090092067 | FLEXIBLE FRAME STRUCTURE IN WIRELESS COMMUNICATION SYSTEM - The disclosure relates to a frame structure that can be flexibly configured to serve to half-duplex users or a mixture of half- and full-duplex users based upon the grouping of user terminals according to one or more criteria. The disclosure also relates to the switching of users from one group to another. The signaling mechanisms to reconfigure a frame and to switch users are provided. | 04-09-2009 |
20090092178 | Techniques for Estimating Received Signal Strength and Carrier to Interference and Noise Ratio in OFDM Systems - A technique for determining a received signal strength indicator of a target base station at a subscriber station includes performing a discrete Fourier transform on a received signal to provide a transformed signal. In this case, the transformed signal occupies one or more segments of a channel and the one or more segments each include multiple subcarriers. A shift-n cross-correlation is calculated based on the transformed signal and a preamble sequence of the target base station to provide a coarse received signal strength indicator for the target base station. | 04-09-2009 |
20090280747 | Method and Apparatus for Interference Cancellation in a Wireless Communication System - A mobile device estimates a data symbol from a received signal by using one or more interference cancellation algorithms. For one interference cancellation algorithm, the mobile device calculates a correction factor by estimating a Doppler speed and a time difference between a first time interval like a preamble symbol and a second time interval like any symbol of interest in an assigned data allocation in the data zone. Using the correction factor, the mobile device updates outdated interference information. The mobile device cancels interference in the received signal distorted by co-channel interference by using the updated interference information. Also, the mobile device is configured to combine results of multiple interference cancellation algorithms based on the applicability of the individual interference cancellation algorithms in particular scenarios. | 11-12-2009 |
20100034299 | MAPPING AND SIGNALING OF COMMON REFERENCE SYMBOLS FOR MULTIPLE ANTENNAS - A method, a network base station, and a user communication device for transmitting data on an orthogonal frequency-division multiplexing carrier are disclosed. An antenna array may transmit a signal decodable by a legacy user communication device designed for compatibility with a legacy set of transmission antennas. A processor | 02-11-2010 |
Patent application number | Description | Published |
20090064983 | Methods, Wires, and Apparatus for Slicing Hard Materials - Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. | 03-12-2009 |
20130068209 | METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS - Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. | 03-21-2013 |
20130092143 | METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS - Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. | 04-18-2013 |
Patent application number | Description | Published |
20100276699 | Silicon Carbide and Related Wide Bandgap Semiconductor Based Optically-Controlled Power Switching Devices - An optically-controlled power switch for use as an electrical switch is generally provided. The device can include a wide bandgap semiconducting material defining a stack having a p-n junction, a metal mask overlying the top surface of the stack and defining at least one opening to allow light to pass through the metal mask; a first lead wire connected to the metal stack; and a second lead wire connected to the bottom surface of the stack. | 11-04-2010 |
20100289032 | DIFFUSED JUNCTION TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME - An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×10 | 11-18-2010 |
20110059003 | METHODS OF GROWING A SILICON CARBIDE EPITAXIAL LAYER ON A SUBSTRATE TO INCREASE AND CONTROL CARRIER LIFETIME - A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs. | 03-10-2011 |
20130143396 | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten mixture (e.g., including KOH and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface. | 06-06-2013 |
20140097450 | Diffused Junction Termination Structures for Silicon Carbide Devices - An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×10 | 04-10-2014 |
20140231826 | Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime - A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs. | 08-21-2014 |
20140338588 | Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition - Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber). At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD chamber. The epilayer comprising SiC can then be grown on the surface of the substrate in the presence of the fluorine atoms. | 11-20-2014 |
Patent application number | Description | Published |
20090232876 | Method and composition for in situ formation of an artificial blockage to control bleeding - A composition for in situ formation of an artificial blockage to control bleeding includes a suitable amount of a polymer-forming component, a suitable amount of a crosslinking agent, hydrogen peroxide, and a decomposing agent for hydrogen peroxide. The decomposing agent includes exogenous or endogenous catalase, or both. | 09-17-2009 |
20090232877 | Method and composition for in situ formation and/or expansion of a polymer-based hemostatic agent to control bleeding - A composition for in situ formation and/or expansion of a polymer-based hemostatic agent to control bleeding includes a suitable amount of a polymer or polymer-forming component, hydrogen peroxide or chemical(s) capable of forming hydrogen peroxide, or a combination of both, and a decomposing agent for hydrogen peroxide. The decomposing agent includes an endogenously or exogenously supplied catalyst (other than catalase), or both, and/or the polymer or polymer-forming component. | 09-17-2009 |
20120308509 | Method and Composition for In Situ Formation of an Artificial Blockage to Control Blood Loss - Two siloxane-based mixtures combine to form a soft or semi-solid matrix for forming an artificial blockage to control bleeding, particularly moderate to severe bleeding. The first component includes a homogeneous mixture or solution that includes a polymeric matrix, a surfactant, filler(s) and metal compound(s). The second component includes a homogeneous mixture or solution that includes a polymer(s), a filler(s), a surfactant, and hydrogen peroxide. The combination of the two components is carried out with adequate mixing using mechanical and micro-kinetic mixing mechanisms and can be performed in a field-ready delivery device. | 12-06-2012 |
20140276484 | Clay Composites and their Applications - Clay composite sheets, mats, films or membranes without polymers. Methods of preparing clay composite sheets, mats, films or membranes without using polymers in the method. Methods of using clay composite sheets, mats, films or membranes prepared without using polymers. Antimicrobial dressing having organo-modified clay product. Transdermal delivery of drugs using organo-modified clay product and methods. | 09-18-2014 |
20140287640 | Functionalized Ionic Liquids and Their Applications - Disclosure of functionalized ionic liquids. Use of disclosed ionic liquids as solvent for carbon dioxide. Use of disclosed ionic liquids as flame retardant. Use of disclosed ionic liquids for coating fabric to obtain flame retardant fabric. | 09-25-2014 |
20140363393 | Method and Composition for In Situ Formation and/or Expansion of a Polymer-Based Hemostatic Agent to Control Bleeding - A composition for in situ formation and/or expansion of a polymer-based hemostatic agent to control bleeding includes a suitable amount of a polymer or polymer-forming component, hydrogen peroxide or chemical(s) capable of forming hydrogen peroxide, or a combination of both, and a decomposing agent for hydrogen peroxide. The decomposing agent includes an endogenously or exogenously supplied catalyst (other than catalase), or both, and/or the polymer or polymer-forming component. | 12-11-2014 |