Su, Longtan Township
Chang-Yung Su, Longtan Township TW
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20090253209 | Method of obtaining BZM purity, quantity of [123I]IBZM labeled ligand and quantity of BZM free ligand - A purity of BZM is analyzed by a high performance liquid Chromatography (HPLC) to know whether the purity is qualified. And a quantity of a labeled ligand ([ | 10-08-2009 |
Chin-Te Su, Longtan Township TW
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20120056276 | STRAINED ASYMMETRIC SOURCE/DRAIN - The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes providing a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed. | 03-08-2012 |
20130299910 | STRAINED-CHANNEL SEMICONDUCTOR DEVICE FABRICATION - A method for controlling IC device strain and the devices thereby formed are disclosed. An exemplary embodiment includes receiving an IC device substrate having a device region corresponding to an IC device. An implantation process is performed on the device region forming an amorphous region within the device region. The IC device substrate is recessed to define a source/drain recess in the device region having a profile determined by the amorphous structure of the amorphous region. A source/drain epitaxy is then performed to form a source/drain structure within the source/drain recess. | 11-14-2013 |
Chiung-Chieh Su, Longtan Township TW
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20110042363 | CONTROL METHOD OF OPTICAL CUTTING - The invention discloses a control method of optical cutting. A laser processing module is used to generate a cutting heat source and an auxiliary heat source. The control method of optical cutting includes the steps of determining a cutting path on the work piece first; then calculating a thermal stress distribution along the cutting path according to a heating condition; next determining an irradiation condition for the auxiliary cutting heat source according to the thermal stress distribution induced by the cutting heat source; and irradiating the work piece along the cutting path with the cutting heat source and simultaneously irradiating the work piece with the auxiliary cutting heat source. The cutting of the work piece is therefore finished. | 02-24-2011 |
20110052159 | APPARATUS FOR UNIFORM THERMAL PROCESSING - An apparatus of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object. | 03-03-2011 |
20140130982 | Thin film processing apparatus - A thin film processing apparatus assembles a substrate and an auxiliary plate tightly and the substrate is coated with a thin film whereon the auxiliary plate is situated. Since the substrate or the auxiliary plate is transparent for thermal radiation, the thin film heated by thermal radiation symmetrically in thickness direction will be available. Consequentially debonding, warping and cracking of thin film are thus prevented and outgassing from thin film is eliminated as well. | 05-15-2014 |
Wen-Chiung Su, Longtan Township TW
Patent application number | Description | Published |
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20080255381 | BISBIPHENYLACYLPHOSPHINE OXIDE AND PREPARATION METHOD THEREFORE - A bisbiphenylacylphosphine oxide of formula (I) and its preparation method are provided. The formula of —Ar— is | 10-16-2008 |
20080287701 | BISBIPHENYLACYLPHOSPHINE OXIDE AND PREPARATION METHOD THEREFORE - A bisbiphenylacylphosphine oxide of formula (I) and its preparation method are provided. The formula of —Ar— is | 11-20-2008 |
20100130698 | DEVELOPMENT OF A NOVEL CROSS-LINKED EPOXY RESIN WITH FLAME-RETARDANT PROPERTIES - The invention discloses a novel cross-linked epoxy resin with flame-retardant properties and method for producing the same. The polymeric material of the invention includes an epoxy resin, a curing agent and a modification agent. Particularly, the modification agent is a derivative of 9,10-Dihydro-9-oxa-10-phosphaphenanthrene 10-Oxide (DOPO). Moreover, the curing agent is 4,4′-diaminodiphenyl methane (DDM), or tris(4-aminephenyl)amine (NNH). | 05-27-2010 |
20110118423 | DEVELOPMENT OF A CROSS-LINKED EPOXY RESIN WITH FLAME-RETARDANT PROPERTIES - The invention discloses a cross-linked epoxy resin with flame-retardant properties and method for producing the same. The polymeric material of the invention includes an epoxy resin, a curing agent and a modification agent. Particularly, the modification agent is a derivative of 9,10-Dihydro-9-oxa-10-phosphaphenanthrene 10-oxide (DOPO). Moreover, the curing agent is 4,4′-diaminodiphenyl methane (DDM), or tris(4-aminophenyl)amine (NNH). | 05-19-2011 |
20110207908 | PHOSPHORUS-CONTAINING BEXZOXAZINE RESIN WITH VARIOUS SUBSTITUENTS AND METHOD FOR PREPARING THE SAME - The present invention provides a method for preparing a phosphorus-containing bexzoxazine resin having the following structure shown as the formula (I) or (V): | 08-25-2011 |
20110213114 | DENDRON, POLYURETHANE WITH SIDE-CHAIN REGULAR DENDRON, AND PRODUCING METHODS THEREOF - A dendron with hydrophobic functional of end group, a polyurethane with the dendron, and producing methods thereof are disclosed. The dendron with hydrophobic functional of end group in the polyurethane systems, and the honeycomb-like structure thin films were obtained by a breath-figure process. The structures of dendron and dendritic side-chain polyurethanes are respectively expressed in the following. Therein, the end-groups (R) of the dendron are long alkyl chains or perfluoroalkyl derivatives. | 09-01-2011 |
Ying-Tang Su, Longtan Township TW
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20140146505 | BALL GRID ARRAY AND LAND GRID ARRAY HAVING MODIFIED FOOTPRINT - An apparatus includes a substrate having a surface and a plurality of solder balls arranged on the surface to form a ball grid array. A portion of the plurality of solder balls is arranged to have a pitch between adjacent solder balls. The adjacent solder balls having the pitch have a shape of a truncated sphere. At least one solder ball of the plurality of solder balls is included in a solder island on the surface having a shape that is different than the shape of the truncated sphere. | 05-29-2014 |
Yong-Sen Su, Longtan Township TW
Patent application number | Description | Published |
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20110052159 | APPARATUS FOR UNIFORM THERMAL PROCESSING - An apparatus of thermal processing is provided. A heating lamp and a reflector are disposed over a wafer and the heat flux distribution on the wafer generated by the individual heating lamp is measured and adjusted. A set of heating lamps formed by heating lamps is disposed over the wafer. The heating lamps are in concentric rings and arranged as an axi-symmetric array. The relative position between the set of heating lamps and the wafer is adjusted so that the wafer center is at the position with local mean heat flux from lamps between the most inner lamp subset and its adjacent lamp subset. Followed by adjusting the heating powers, either or both of the wafer and the set of heating lamps are rotated respect to the center of the wafer, so as to improve uniformity of the heat flux distribution on the heated object. | 03-03-2011 |