Patent application number | Description | Published |
20120248094 | Soldering Method - A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures. | 10-04-2012 |
20130082387 | POWER SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR ARRANGEMENT - In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization. | 04-04-2013 |
20130084679 | METHOD FOR PRODUCING A POWER SEMICONDUCTOR ARRANGEMENT - In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer. | 04-04-2013 |