Patent application number | Description | Published |
20090324819 | METHODS FOR INCREASING POLYCRYSTALLINE SILICON REACTOR PRODUCTIVITY BY RECYCLE OF SILICON FINES - Processes for producing polycrystalline silicon include contacting silicon particles with a thermally decomposable silicon compound in a reaction chamber. A portion of the silicon decomposable compound decomposes to produce silicon dust which is discharged from and reintroduced into the reaction chamber. The discharged silicon dust agglomerates with the silicon particles. | 12-31-2009 |
20100074825 | DIRECTIONAL SOLIDIFICATION FURNACE FOR REDUCING MELT CONTAMINATION AND REDUCING WAFER CONTAMINATION - A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon. | 03-25-2010 |
20100107966 | METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH - Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging. | 05-06-2010 |
20110002819 | Pulling Assemblies For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt - Methods for producing multicrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots. | 01-06-2011 |
20110002835 | Methods For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt - Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots. | 01-06-2011 |
20110014582 | COATED CRUCIBLES AND METHODS FOR APPLYING A COATING TO A CRUCIBLE - Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content. | 01-20-2011 |
20110015329 | COATING COMPOSITIONS - Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content. | 01-20-2011 |
20110177284 | SILICON WAFERS AND INGOTS WITH REDUCED OXYGEN CONTENT AND METHODS FOR PRODUCING THEM - Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content. | 07-21-2011 |
20110180229 | Crucible For Use In A Directional Solidification Furnace - A directional solidification furnace comprises a crucible assembly including a crucible for containing a melt having walls and a base with an opening therein, a crucible support for supporting the crucible, and a lid covering the crucible. A plate is received in the opening in the base. The plate has a higher thermal conductivity than that of the base. The base can include a composite having an additive such that the composite base has a higher thermal conductivity than a comparable without the additive. | 07-28-2011 |
20120085332 | METHODS FOR CROPPING A CYLINDRICAL INGOT - Methods for cropping a cylindrical ingot and, in some particular embodiments, for cropping a multicrystalline ingot such as a multicrystalline silicon ingot. | 04-12-2012 |
20120186299 | Directional Solidification Furnace For Reducing Melt Contamination And Reducing Wafer Contamination - A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon. | 07-26-2012 |
20120252950 | COATING COMPOSITIONS - Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content. | 10-04-2012 |
20130026469 | SILICON WAFERS AND INGOTS WITH REDUCED OXYGEN CONTENT AND METHODS FOR PRODUCING THEM - Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content. | 01-31-2013 |
20130125587 | METHODS FOR PRODUCING CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130125719 | PROCESSES FOR PRODUCING SILICON INGOTS - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130129921 | METHODS FOR PRODUCING CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130129973 | CRUCIBLES WITH A REDUCED AMOUNT OF BUBBLES AND INGOTS AND WAFERS PRODUCED BY USE OF SUCH CRUCIBLES - Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed. | 05-23-2013 |
20130156293 | Methods and Systems For Grain Size Evaluation Of Multi-Cystalline Solar Wafers - Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images. | 06-20-2013 |
20140174591 | DOPANT FUNNEL FOR LOADING AND DISPENSING DOPANT - A dopant funnel for loading dopant pellets into a dispenser tube of a dopant dispenser is disclosed. The dopant funnel has a cup connected through a restrictor to a shaft. The cup holds random oriented dopant pellets. The restrictor meters the amount and orientation of dopant pellets being removed from the cup. The shaft is in alignment with the restrictor for delivering dopant pellets from the cup to the dispenser tube. | 06-26-2014 |