Patent application number | Description | Published |
20080276958 | SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS - A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described. | 11-13-2008 |
20080314522 | APPARATUS AND METHOD TO CONFINE PLASMA AND REDUCE FLOW RESISTANCE IN A PLASMA REACTOR - An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region. | 12-25-2008 |
20090025878 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING ELECTRICAL BYPASS ELEMENTS - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve. | 01-29-2009 |
20090025879 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING A CONDUCTIVE BAFFLE - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall. | 01-29-2009 |
20090130856 | METHOD FOR MONITORING PROCESS DRIFT USING PLASMA CHARACTERISTICS - Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma. | 05-21-2009 |
20090132189 | METHOD FOR DETERMINING PLASMA CHARACTERISTICS - Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms. | 05-21-2009 |
20090140828 | METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA - Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection. | 06-04-2009 |
20110291771 | APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION - Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector. | 12-01-2011 |