Patent application number | Description | Published |
20100311236 | COPPER INTERCONNECT STRUCTURE WITH AMORPHOUS TANTALUM IRIDIUM DIFFUSION BARRIER - A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60% by atomic weight such that the barrier layer has a resulting amorphous structure. | 12-09-2010 |
20110062587 | LARGE GRAIN SIZE CONDUCTIVE STRUCTURE FOR NARROW INTERCONNECT OPENINGS - An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation. | 03-17-2011 |
20110094884 | SURFACE CHARGE ENABLED NANOPOROUS SEMI-PERMEABLE MEMBRANE FOR DESALINATION - A filter includes a membrane having a plurality of nanochannels formed therein. A first surface charge material is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided. | 04-28-2011 |
20110127438 | Dosimeter Powered by Passive RF Absorption - A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency. | 06-02-2011 |
20110168560 | Nanoporous Semi-Permeable Membrane and Methods for Fabricating the Same - A filter includes a membrane having a plurality of nanochannels formed therein. Functionalized nanoparticles are deposited through self assembly onto surfaces defining the nanochannels so as to decrease the final diameter of the membrane. Methods for making and using the filter are also provided. | 07-14-2011 |
20110188172 | HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE - A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor. | 08-04-2011 |
20110201204 | Precisely Tuning Feature Sizes on Hard Masks Via Plasma Treatment - Methods are provided for fabricating devices. A first layer is formed. A hardmask on the first layer is formed. Features on the hardmask are patterned. The sizes of features on the hardmask are reduced by applying a plasma treatment process to form reduced size features. Also, the size of features on the hardmask can be enlarged to form enlarged size features by applying the plasma treatment process and/or removing the oxidized part of the feature during plasma treatment process. Another method may include a first layer formed on a substrate and a second layer formed on the first layer. First features are patterned on the first layer, and second features are patterned on the second layer. A size of second features on the second layer is closed due to the different oxidation rate of the two layers during the plasma treatment process, to form a self-sealed channel and/or self-buried trench. | 08-18-2011 |
20120267249 | SURFACE CHARGE ENABLED NANOPOROUS SEMI-PERMEABLE MEMBRANE FOR DESALINATION - A filter includes a membrane having a plurality of nanochannels formed therein. A first surface charge material is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided. | 10-25-2012 |
20120273362 | SURFACE CHARGE ENABLED NANOPOROUS SEMI-PERMEABLE MEMBRANE FOR DESALINATION - A filter includes a membrane having a plurality of nanochannels formed therein. A first surface charge material is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided. | 11-01-2012 |
20120293915 | HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE - A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor. | 11-22-2012 |
20130128413 | HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE - A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor. | 05-23-2013 |