Patent application number | Description | Published |
20080315134 | OPTICAL SYSTEM FOR RADIATION IN THE EUV-WAVELENGTH RANGE AND METHOD FOR MEASURING A CONTAMINATION STATUS OF EUV-REFLECTIVE ELEMENTS - An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation. | 12-25-2008 |
20090015951 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 01-15-2009 |
20090231707 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, in particular a projection exposure apparatus ( | 09-17-2009 |
20100149517 | PROJECTION OBJECTIVE AND METHOD FOR ITS MANUFACTURE - A method of manufacturing a projection objective ( | 06-17-2010 |
20100265481 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION - An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm. | 10-21-2010 |
20110122392 | MICROLITHOGRAPHY ILLUMINATION SYSTEM AND MICROLITHOGRAPHY ILLUMINATION OPTICAL UNIT - An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel. | 05-26-2011 |
20110222144 | METHOD FOR PRODUCING A MULTILAYER COATING, OPTICAL ELEMENT AND OPTICAL ARRANGEMENT - A method for producing a multilayer coating ( | 09-15-2011 |
20130038929 | MIRROR FOR THE EUV WAVELENGTH RANGE, SUBSTRATE FOR SUCH A MIRROR, PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY COMPRISING SUCH A MIRROR OR SUCH A SUBSTRATE, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION OBJECTIVE | 02-14-2013 |
20130148200 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, e.g. a projection exposure apparatus ( | 06-13-2013 |
20130242278 | Projection objective of a microlithographic projection exposure apparatus designed forEUV and a method of optically adjusting a projection objective - The invention concerns a projection objective of a microlithographic projection exposure apparatus designed for EUV, for imaging an object plane illuminated in operation of the projection exposure apparatus into an image plane, wherein the projection objective has at least one mirror segment arrangement ( | 09-19-2013 |
20140022525 | Deflection Mirror and Projection Exposure Apparatus for Microlithography Comprising Such a Deflection Mirror - A deflection mirror ( | 01-23-2014 |
20140132941 | IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE SYSTEM INCLUDING THE SAME - An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm. | 05-15-2014 |
20140199543 | REFLECTIVE OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY - In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element ( | 07-17-2014 |