Patent application number | Description | Published |
20080204695 | EUV Lithography System and Chuck for Releasing Reticle in a Vacuum Isolated Environment - A method for providing a vacuum isolated environment in a lithography system is disclosed. The method for dechucking a reticle includes providing a mask chamber having one or more vacuum valves for isolating the mask chamber from the lithography system. The one or more vacuum valves are closed to isolate the mask chamber from the rest of the lithography system. After the mask chamber is isolated, an inert gas is provided to the mask chamber to dechuck the reticle. | 08-28-2008 |
20090046273 | Systems and Methods for Monitoring and Controlling the Operation of Extreme Ultraviolet (EUV) Light Sources Used in Semiconductor Fabrication - Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements. | 02-19-2009 |
20100035431 | Reticle Stages for Lithography Systems and Lithography Methods - Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle. | 02-11-2010 |
20100066991 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 03-18-2010 |
20100119981 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 05-13-2010 |
20120069311 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 03-22-2012 |
20120139117 | Dense Seed Layer and Method of Formation - A semiconductor device includes a workpiece and a first material layer disposed over the workpiece. The first material layer has a first number of atoms at a surface. A seed layer is disposed over the first material layer. The seed layer includes a chemisorbed monolayer of a second number of atoms at the surface having a surface coverage of at least 0.5 such that the ratio of the number of first atoms at the surface to the number of second atoms at the surface is no more than 2:1. The second atoms of the seed layer include oxygen or nitrogen. | 06-07-2012 |