Patent application number | Description | Published |
20090084181 | INTEGRALLY FABRICATED MICROMACHINE AND LOGIC ELEMENTS - Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width. | 04-02-2009 |
20110068420 | Semiconductor Structure with Lamella Defined by Singulation Trench - A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench. | 03-24-2011 |
20110163395 | Pressure Sensor and Method - A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area. | 07-07-2011 |
20120061777 | INTEGRALLY FABRICATED MICROMACHINE AND LOGIC ELEMENTS - Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width. | 03-15-2012 |
20120074570 | Method for Forming a Through Via in a Semiconductor Element and Semiconductor Element Comprising the Same - A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element. | 03-29-2012 |
20120161254 | Method of Providing a Semiconductor Structure with Forming A Sacrificial Structure - A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate. | 06-28-2012 |
20120211805 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 08-23-2012 |
20130134530 | Method of fabricating isolated semiconductor structures - Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted. | 05-30-2013 |
20130334624 | METHOD OF PROVIDING A SEMICONDUCTOR STRUCTURE WITH FORMING A SACRIFICIAL STRUCTURE - A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate. | 12-19-2013 |
20140070795 | Hall Effect Device - A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements. | 03-13-2014 |
20140252422 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 09-11-2014 |