Sriram, US
Arvind Sriram, Mount Kisco, NY US
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20160132845 | VEHICULAR VIOLATION FINE PAYMENT USING PORTABLE COMPUTING DEVICE - Methods and systems read a computer readable code on a printed vehicular violation using an optical sensor of a portable computing device and access a vehicular violation database to identify a registered vehicle corresponding to data in the computer readable code. The methods and systems retrieve a vehicular violation history for the registered vehicle. The vehicular violation history is a history of vehicular violations maintained by the vehicular violation database related to the registered vehicle, and includes a payment status of fines associated with the vehicular violations. The methods and systems therefore display this vehicular violation history and display an option to pay one or more of the fines on the graphic user interface. The methods and systems then receive payment information into the graphic user interface, and process the payment of one or more of the fines through the portable computing device, using the payment information provided. | 05-12-2016 |
Balasubramanian Sriram, Sammamish, WA US
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20080276238 | Use of Metrics to Control Throttling and Swapping in a Message Processing - A system and method of using metrics to control throttling and swapping in a message processing system is provided. A workload status of a message processing system is determined, and the system polls for a new message according to the workload status. The message processing system identifies a blocked instance and calculates an expected idle time for the blocked instance. The system dehydrates the blocked instance if the expected idle time exceeds a predetermined threshold. | 11-06-2008 |
Balasuramanian Sriram, Sammamish, WA US
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20130307673 | RFID DEVICE GROUPS - The claimed subject matter provides a system and/or a method that facilitates configuring at least one radio frequency identification (RFID) device. An RFID network can include at least one device associated with a device group, wherein the device group corresponds to a characteristic. An organizational manager can uniformly configure the at least one device based at least in part upon membership of the device group. | 11-21-2013 |
Janani C. Sriram, Bellevue, WA US
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20120129546 | PATH PROGRESSION MATCHING FOR INDOOR POSITIONING SYSTEMS - A path progression matching system and method that uses path progression to find a current position of a mobile device in an indoor environment and a path history to find the path of the mobile device to get to the current position. Embodiments of the system and method use path history information, constraints, and optimization measures such as the use of received signal strength indicator (RSSI) weighted correlation coefficients. Embodiments of the system and method include a unified probabilistic model that uses path history and allows multiple constraints to be applied simultaneously. Embodiments of the system and method also include a path progression module having a first-stage progression module, which finds a starting location for the path progression matching, a second-stage module, which begins building a path history, and a third-stage progression module, which uses the path history to find the current position and path. | 05-24-2012 |
Kotikalapudi Sriram, Marlboro, NJ US
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20130302033 | Dynamic Assignment Of Wavelengths In Agile Photonic Networks - In an automatically switched optical network, the wavelengths are assigned to optical path based on their intrinsic physical performance and on the current network operating parameters. The wavelength performance information is organized in binning tables, based primarily on the wavelength reach capabilities. A network topology database provides the distance between the nodes of the network, which is used to determine the length of the optical path. Other network operating parameters needed for wavelength selection are also available in this database. Once a bin corresponding to the path length is identified in the binning table, the wavelength for that path is selected based on length only, or based on the length and one or more additional parameters. The optical path performance is estimated for the selected wavelength, and the search continues if the estimated path performance is not satisfactory. Several available wavelengths are searched and of those, the wavelength that is most used along the optical path in consideration or alternatively network-wide is selected and assigned. This method helps minimize wavelength fragmentation. The binning tables may have various granularities, and may be organized by reach, or by reach, wavelength spacing, the load on the respective optical path, the fiber type, etc. | 11-14-2013 |
Madhavi Sriram, Winston-Salem, NC US
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20120130129 | Efficient Method for Preparing Functionalized Benzosuberenes - The disclosed process can efficiently synthesize functionalized benzosuberenes. The process provides an improved method of production of benzosuberene and compounds containing a benzosuberene moiety, which is characterized by a ring closing methodology comprising reaction of a 5-phenylpentanoic acid with Eaton's reagent to form the benzosuberone. The process, optionally, further includes steps for adding a functional group at the ketone position. | 05-24-2012 |
Madhavi Sriram, Waco, TX US
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20090075943 | Combretastatin Analogs with Tubulin Binding Activity - Analogs of combretastatin have been discovered which demonstrate impressive cytotoxicity as well as a remarkable ability to inhibit tubulin polymerization. Such compounds are excellent clinical candidates for the treatment of cancer in humans. In addition, certain of these ligands, as pro-drugs, may well prove to be tumor selective vascular targeting chemotherapeutic agents or to have vascular targeting activity resulting in the selective prevention and/or destruction of nonmalignant proliferating vasculature. | 03-19-2009 |
Mandyam Sriram, Beaverton, OR US
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20100317178 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal. | 12-16-2010 |
20100317198 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, and a remote plasma source configured to provide a remote plasma to the load lock. | 12-16-2010 |
20110120377 | REMOTE PLASMA PROCESSING OF INTERFACE SURFACES - Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus comprises a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal. | 05-26-2011 |
20110236594 | In-Situ Deposition of Film Stacks - Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase. | 09-29-2011 |
20110236600 | Smooth Silicon-Containing Films - Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate. | 09-29-2011 |
20110244694 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 10-06-2011 |
20110256726 | PLASMA ACTIVATED CONFORMAL FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film. | 10-20-2011 |
20110256734 | SILICON NITRIDE FILMS AND METHODS - Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included. | 10-20-2011 |
20120009802 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 01-12-2012 |
20120028454 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 02-02-2012 |
20120077349 | PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS - Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station. | 03-29-2012 |
20120142172 | PECVD DEPOSITION OF SMOOTH POLYSILICON FILMS - Smooth silicon and silicon germanium films are deposited by plasma enhanced chemical vapor deposition (PECVD). The films are characterized by roughness (Ra) of less than about 4 Å. In some embodiments, smooth silicon films are undoped and doped polycrystalline silicon films. The dopants can include boron, phosphorus, and arsenic. In some embodiments the smooth polycrystalline silicon films are also highly conductive. For example, boron-doped polycrystalline silicon films having resistivity of less than about 0.015 Ohm cm and Ra of less than about 4 Å can be deposited by PECVD. In some embodiments smooth silicon films are incorporated into stacks of alternating layers of doped and undoped polysilicon, or into stacks of alternating layers of silicon oxide and doped polysilicon employed in memory devices. Smooth films can be deposited using a process gas having a low concentration of silicon-containing precursor and/or a process gas comprising a silicon-containing precursor and H | 06-07-2012 |
20130008378 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 01-10-2013 |
20130040447 | CONFORMAL DOPING VIA PLASMA ACTIVATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION - Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source. | 02-14-2013 |
20130157466 | SILICON NITRIDE FILMS FOR SEMICONDUCTOR DEVICE APPLICATIONS - The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added. | 06-20-2013 |
20130316518 | PECVD DEPOSITION OF SMOOTH SILICON FILMS - Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 Å, such as less than about 5 Å as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained. | 11-28-2013 |
20130323930 | Selective Capping of Metal Interconnect Lines during Air Gap Formation - Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps. | 12-05-2013 |
20140094035 | CARBON DEPOSITION-ETCH-ASH GAP FILL PROCESS - Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the top surface of the semiconductor wafer near the gap feature. An ashing operation may then be performed to preferentially remove the built-up material from the top surface of the semiconductor wafer. Further groups of deposition-etching cycles may then be performed, interspersed with further ashing cycles. | 04-03-2014 |
20140209562 | PLASMA ACTIVATED CONFORMAL FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film. | 07-31-2014 |
20140216337 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 08-07-2014 |
Mandyam Ammanjee Sriram, Beaverton, OR US
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20140235069 | MULTI-PLENUM SHOWERHEAD WITH TEMPERATURE CONTROL - An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate. | 08-21-2014 |
Prasad Sriram, Manchester, CT US
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20140032517 | SYSTEM AND METHODS TO CONFIGURE A PROFILE TO RANK SEARCH RESULTS - A method and system to configure a profile to rank search results are provided. A profile that includes behavior information organized as a plurality of components is generated. Additional behavior information is received from a user. At least one component of the plurality of components is updated using the additional behavior information received from the user. A search query is received and search results are generated based on the search query. Search results are ranked based on the updated profile. | 01-30-2014 |
20140032532 | SPELL CHECK USING COLUMN CURSOR - An input query can be spell checked by first parsing the input query into one or more tokens. The one or more tokens are then compared against spell storage tables to derive alternative tokens. A spell cursor is launched, with the spell cursor calculating scores for permutations of the tokens and alternative tokens, and the scores representing a likelihood that a user intended to use the permutation as the input query. A memory table may then be formed including the permutations and scores. The memory table can then be passed to a column cursor, the column cursor designed to form an output table of results based on queries to a database using the permutations. | 01-30-2014 |
20140032593 | SYSTEMS AND METHODS TO PROCESS A QUERY WITH A UNIFIED STORAGE INTERFACE - Systems and methods to process a query with a unified storage interface are described. The system receives a query from a client machine and generates a query expression tree based on the query expression. The system generates a cursor expression tree based on the query expression tree. The system executes a plurality of software components in the cursor expression tree to retrieve data from a first storage device. The plurality of software components comprise a first software component that is utilized to retrieve data irrespective of a plurality of storage devices and a second software component that is utilized to retrieve data from a first storage device. Finally, the system communicates search results to the client machine, the search results include at least a portion of the data. | 01-30-2014 |
20140222856 | SYSTEM AND METHODS TO CONFIGURE A QUERY LANGUAGE USING AN OPERATOR DICTIONARY - A method and a system to configure a query language using an operator dictionary are provided. Dictionary information that corresponds to a first user is generated. The dictionary information includes a first list of compatible query operators and a description of compatible data types that correspond to each operator in the first list of query operators. A search query to search for document information in a database is received from a first user. The database includes an inverted index. Terms of the search query from the first user are determined to be in accordance with the dictionary information that corresponds to the first user. The search query is applied to the inverted index in the database to identify the document information. The document information is sent to the first user. | 08-07-2014 |
20140344114 | METHODS AND SYSTEMS FOR SEGMENTING QUERIES - Apparatus and method for segmentation of text-based user input are disclosed herein. In some embodiments, a text snippet is received from a search interface. The text snippet may include a plurality of units that are each separated by a separation character. A plurality of unit groupings are then generated from the plurality of units. Each unit grouping is scored based on a frequency that the unit grouping is present in a buyer vocabulary and further on a frequency that the each unit grouping is present in a seller vocabulary. A segmented version of the text snippet is generated based on the scoring of the plurality of unit groupings. | 11-20-2014 |
20160026686 | SYSTEM AND METHODS TO CONFIGURE A QUERY LANGUAGE USING AN OPERATOR DICTIONARY - Systems and methods to configure a query language using an operator dictionary are described. The system receives, from a first user, a search query to search for document information in a database. The system determines that terms of the search query from the first user are in accordance with dictionary information that corresponds to the first user. The dictionary information includes a first list of compatible query operators. The system applies the search query to the index data structure in the database to identify the document information. The system sends an electronic interface to the first user that includes the document information. | 01-28-2016 |
Saptharishi Sriram, Cary, NC US
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20080197360 | Diode Having Reduced On-resistance and Associated Method of Manufacture - A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide. | 08-21-2008 |
20080197382 | Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures and methods of fabricating the same - Metal-semiconductor field-effect transistors (MESFETS) are provided. A MESFET is provided having a source region, a drain region and a gate. The gate is between the source region and the drain region. A p-type conductivity layer is provided beneath the source region, the p-type conductivity layer being self-aligned to the gate. Related methods of fabricating MESFETs are also provided herein. | 08-21-2008 |
20090215280 | Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides - A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer. | 08-27-2009 |
20100072520 | Methods of Fabricating Transistors Having Buried P-Type Layers Coupled to the Gate - A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The MESFET has a source, a drain and a gate. The gate is between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the gate between the source and the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel layer and electrically coupled to the gate. Related methods are also provided herein. | 03-25-2010 |
20100308337 | Schottky Diodes Including Polysilicon Having Low Barrier Heights and Methods of Fabricating the Same - Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein. | 12-09-2010 |
20130043491 | Schottky Diodes Including Polysilicon Having Low Barrier Heights - Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein. | 02-21-2013 |
20130234278 | SCHOTTKY CONTACT - The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer. | 09-12-2013 |
20140239308 | MIX DOPING OF A SEMI-INSULATING GROUP III NITRIDE - Embodiments of a semi-insulating Group III nitride and methods of fabrication thereof are disclosed. In one embodiment, a semi-insulating Group III nitride layer includes a first doped portion that is doped with a first dopant and a second doped portion that is doped with a second dopant that is different than the first dopant. The first doped portion extends to a first thickness of the semi-insulating Group III nitride layer. The second doped portion extends from approximately the first thickness of the semi-insulating Group III nitride layer to a second thickness of the semi-insulating Group III nitride layer. In one embodiment, the first dopant is Iron (Fe), and the second dopant is Carbon (C). In another embodiment, the semi-insulating Group III nitride layer is a semi-insulating Gallium Nitride (GaN) layer, the first dopant is Fe, and the second dopant is C. | 08-28-2014 |
20140246699 | TUNNEL JUNCTION FIELD EFFECT TRANSISTORS HAVING SELF-ALIGNED SOURCE AND GATE ELECTRODES AND METHODS OF FORMING THE SAME - Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor epitaxial structure, and depositing a source metal in the trench. The trench extends at least to the channel layer, and the source metal forms a Schottky junction with the channel layer. Related semiconductor device structures are also disclosed. | 09-04-2014 |
20140361341 | CASCODE STRUCTURES FOR GaN HEMTs - A multi-stage transistor device is described. One embodiment of such a device is a dual-gate transistor, where the second stage gate is separated from a barrier layer by a thin spacer layer and is grounded through a connection to the source. In one embodiment the thin spacer layer and the second stage gate are placed in an aperture in a spacer layer. In another embodiment, the second stage gate is separated from a barrier layer by a spacer layer. The device can exhibit improved linearity and reduced complexity and cost. | 12-11-2014 |
20140361342 | RECESSED FIELD PLATE TRANSISTOR STRUCTURES - A transistor device including a field plate is described. One embodiment of such a device includes a field plate separated from a semiconductor layer by a thin spacer layer. In one embodiment, the thickness of spacer layer separating the field plate from the semiconductor layers is less than the thickness of spacer layer separating the field plate from the gate. In another embodiment, the non-zero distance separating the field plate from the semiconductor layers is about 1500 Å or less. Devices according to the present invention can show capacitances which are less drain bias dependent, resulting in improved linearity. | 12-11-2014 |
20140361343 | CASCODE STRUCTURES WITH GaN CAP LAYERS - A transistor device including a cap layer is described. One embodiment of such a device includes cap layer between a gate and a semiconductor layer. In one embodiment, the thickness of the cap layer is between 5 nm and 100 nm. In another embodiment, the cap layer can be doped, such as delta-doped or doped in a region remote from the semiconductor layer. Devices according to the present invention can show capacitances which are less drain bias dependent, resulting in improved linearity. | 12-11-2014 |
20160087088 | Tunnel Junction Field Effect Transistors Having Self-Aligned Source and Gate Electrodes and Methods of Forming the Same - Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor epitaxial structure, and depositing a source metal in the trench. The trench extends at least to the channel layer, and the source metal forms a Schottky junction with the channel layer. Related semiconductor device structures are also disclosed. | 03-24-2016 |
20160111503 | SEMICONDUCTOR DEVICE WITH IMPROVED FIELD PLATE - A transistor device includes a semiconductor body, a spacer layer, and a field plate. The spacer layer is over at least a portion of a surface of the semiconductor body. The field plate is over at least a portion of the spacer layer, and includes a first current carrying layer, a refractory metal interposer layer over the first current carrying layer, and a second current carrying layer over the refractory metal interposer layer. By including the refractory metal interposer layer between the first current carrying layer and the second current carrying layer, the electromigration of metals in the field plate is significantly reduced. Since electromigration of metals in the field plate is a common cause of transistor device failures, reducing the electromigration of metals in the field plate improves the reliability and lifetime of the transistor device. | 04-21-2016 |
Shreedharan Sriram, Indianapolis, IN US
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20120173153 | DATA ANALYSIS OF DNA SEQUENCES - Systems and methods for data analysis are provided. In one embodiment, a method may be provided for analysis comprising electronically receiving sequence data related to a plurality of sequences and a reference sequence, associating the sequence data with one of at least two groups, identifying a plurality of high quality read sequences from among the plurality of sequences, extracting a plurality of unique read sequences from the plurality of high quality read sequences, and aligning the plurality of unique read sequences against the reference sequence data corresponding to a reference sample. The method may further identify mutations in a targeted location, display the targeted mutations, and prioritize the technologies that caused the mutations according to their efficiency. In one example, the systems and methods are used to characterize the activity of several ZFN candidates. | 07-05-2012 |
20130211729 | DATA ANALYSIS OF DNA SEQUENCES - Systems and methods for data analysis are provided. In one embodiment, a method for analysis is provided, including electronically receiving sequence data; electronically receiving one or more reference data sequences related to at least an expression vector; associating the sequence data with at least one of the reference data sequences to identify a transgene flanking sequence; searching a genome for one or more insertion sites of the transgene flanking sequence; and annotating the genome and the one or more insertion sites within the genome when one or more insertion sites are found in said searching step. | 08-15-2013 |
20150128307 | Optimal Soybean Loci - As disclosed herein, optimal native genomic loci have been identified in dicot plants, such as soybean plants, that represent best sites for targeted insertion of exogenous sequences. | 05-07-2015 |
20150128308 | Optimal Soybean Loci - As disclosed herein, optimal native genomic loci of soybean plants have been identified that represent best sites for targeted insertion of exogenous sequences. | 05-07-2015 |
20150128309 | Optimal Maize Loci - As disclosed herein, optimal native genomic loci have been identified in monocot plants, such as maize plants, that represent best sites for targeted insertion of exogenous sequences. | 05-07-2015 |
20150128310 | Optimal Maize Loci - As disclosed herein, optimal native genomic loci from maize plants have been identified that represent best sites for targeted insertion of exogenous sequences. | 05-07-2015 |
Siddharth Sriram, Seattle, WA US
Patent application number | Description | Published |
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20090307368 | STREAM COMPLEXITY MAPPING - Stream complexity mapping enables substantially uninterrupted transmission of a highest compatible bit rate of a stream of media to a client via a network connection. Stream complexity data may include complexity information for each period of a stream of media. The stream complexity data may be associated with the stream of media. The stream complexity data may be analyzed to enable a preemptive transition to a new stream of media having a new bit rate and/or expanding a buffer capacity to provide uninterrupted streaming media for complex portions of a variable bit rate stream of media. | 12-10-2009 |
20130061291 | Modular Device Authentication Framework - Systems, methods, and computer-readable media provide a requesting device with access to a service. In one implementation, a server receives a request to access a service, and the request includes a device type identifier of a device requesting access to the service. The server extracts the device type identifier from the request and determines a corresponding device type for the requesting device. An authentication module is selected from a plurality of authentication modules based on the device type identifier, and the selected authentication module implements an authentication scheme for the device type of the requesting device. The server authenticates the request using the selected authentication module to determine whether the requesting device is permitted to access the service, and provides access to the service based on at least a determination that the requesting device is authorized to access the service. | 03-07-2013 |
20150100688 | TRACKING USER BEHAVIOR RELATIVE TO A NETWORK PAGE - Disclosed are various embodiments for tracking user behavior relative to a network page and identifying user interest in various content items of the network page according to the user behavior. A network page that includes multiple content items is rendered for display in a client. A user action is obtained relative to the network page. A user behavior report is sent to one or more servers. The user behavior report indicates the user action, a timestamp associated with the user action, and one or more of the content items that are associated with the user action. | 04-09-2015 |
Sundar Sriram, Aurora, IL US
Patent application number | Description | Published |
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20110122761 | KPI Driven High Availability Method and apparatus for UMTS radio access networks - An apparatus in one example, comprising a network node that receives telecommunications network measurements where the network node calculates key performance indicator (KPI) measurements from the network measurements, and the network node performs system recovery actions based on the calculated KPI measurements. | 05-26-2011 |
Sundararajan Sriram, Plano, TX US
Patent application number | Description | Published |
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20100091821 | WIRELESS COMMUNICATIONS SYSTEM WITH SECONDARY SYNCHRONIZATION CODE BASED ON VALUES IN PRIMARY SYNCHRONIZATION CODE - A wireless communication system. The system comprises transmitter circuitry (BST | 04-15-2010 |
20110064071 | WIRELESS COMMUNICATIONS SYSTEM WITH SECONDARY SYNCHRONIZATION CODE BASED ON VALUES IN PRIMARY SYNCHRONIZATION CODE - A wireless communication system. The system comprises transmitter circuitry (BST | 03-17-2011 |
20120147730 | WIRELESS COMMUNICATIONS SYSTEM WITH SECONDARY SYNCHRONIZATION CODE BASED ON VALUES IN PRIMARY SYNCHRONIZATION CODE - A wireless communication system. The system comprises transmitter circuitry (BST | 06-14-2012 |
20120147877 | WIRELESS COMMUNICATIONS SYSTEM WITH SECONDARY SYNCHRONIZATION CODE BASED ON VALUES IN PRIMARY SYNCHRONIZATION CODE - A wireless communication system. The system comprises transmitter circuitry (BST | 06-14-2012 |
Sundar R. Sriram, Aurora, IL US
Patent application number | Description | Published |
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20140274055 | METHOD AND APPARATUS FOR NETWORK NEIGHBOR CELL LIST OPTIMIZATION - A method for optimizing a cellular network neighbor cell list (NCL) includes collecting performance measurement (PM) data relating to the performance of the cellular network; based on the processed and analyzed PM data, generating a proposal for optimization of the NCL; computing an SIB11 message consistent with the optimization proposal; checking the SIB11 message to ensure it can be encoded; and assuming the SIB11 message cannot be encoded, reverting to the generating step and generating a new proposal for optimization of the NCL, so as to optimize the NCL. | 09-18-2014 |
Sundar R. Sriram, Naperville, IL US
Patent application number | Description | Published |
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20100304736 | Method and apparatus to enable high availability UMTS radio access networks by dynamically moving Node B links among RNCs - An apparatus in one example, wherein the apparatus comprises a link monitor, wherein the link monitor reconfigures link paths of a telecommunications network if links comprising a link route list are marked out of service. | 12-02-2010 |
Suresh Sriram, Alpharetta, GA US
Patent application number | Description | Published |
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20110144223 | Thermally stabilized polyarylene compositions - A polyarylene composition containing one or more polyarylenes and one or more sterically hindered phenolic stabilizers. The polyarylene composition has enhanced resistance to discoloration and degradation under thermal stress. | 06-16-2011 |
20110144252 | Polyarylene compositions having enhanced flow properties - Polyarylene compositions including one or more organic substances. The organic substances can be selected from the group consisting of a paraffin, an olefin, an olefin oligomer, an alkoxylated acyclic carboxylic acid, an alkoxylated acyclic carboxylic acid amide, an acyclic carboxylic acid, an acyclic carboxylic acid ester, an acyclic carboxylic acid alkali metal salt, an acyclic carboxylic acid amide, an alkoxylated acyclic alcohol, an acyclic alcohol, an alkoxylated alkyl phenol and an alkyl phenol. The organic substances provide improved processability. Further inclusion of a sterically hindered phenol provides tougher polyarylene compositions. | 06-16-2011 |
20120025020 | Fasteners made of a polymer material - Fasteners, such as bolts, nuts and screws, rivets, pins, and retaining rings, made of a highly kinked rigid-rod polyarylene exhibiting outstanding characteristics, notably a high torque and a high tensile elongation, a measure of practical toughness. | 02-02-2012 |
20150368430 | THERMALLY STABILIZED POLYARYLENE COMPOSITIONS - A polyarylene composition containing one or more polyarylenes and one or more sterically hindered phenolic stabilizers. The polyarylene composition has enhanced resistance to discoloration and degradation under thermal stress. | 12-24-2015 |
Suresh R. Sriram, Aurora, IL US
Patent application number | Description | Published |
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20150299395 | Polyarylene ether sulfones - A process for the manufacturing of a poly(arylether sulfone)polymer comprising reacting in a solvent mixture comprisng a polar aprotic solvent and in the presence of an alkali metal carbonate, a monomer mixture which contains: at least one 1,4:3,6-dianhydrohexitol selected from the group consisting of isosorbide (1), isomannide (2) and isoidide (3); at least one dihaloaryl compound of formula (S): X—Ar | 10-22-2015 |
20150322210 | Polyaryl Ether Polymers End-Capped with Phenolic Amino Acids - The invention relates to modified polyaryl ether polymers (PAEs) obtained by end-capping the polymers with a phenolic aminoacid, in particular with a bio-phenolic aminoacid such as L-tyrosine. The polymers of the present invention feature high thermal resistance and increased hydrophilicity. The present invention also relates to a method for the manufacture of those polymers, and their use in the manufacture of shaped articles including membranes. | 11-12-2015 |
20160114563 | Improved mobile electronic parts - A mobile electronic part comprising: (i) a shaped metal part, at least part of the surface thereof being coated with at least one polymer layer (L), wherein the metal is selected from a group consisting of magnesium, aluminum and alloys of these metals, and wherein said polymer layer (L) comprises at least one polymer selected from an aromatic polyamide-imide polymer [(PAI) polymer, herein after] or a poly(ethersulfone) polymer [(PESU) polymer herein after], and (ii) a thermoplastic resin composition layer [layer (T), herein after] fixed to the at least one polymer layer (L) of said shaped metal part wherein said composition comprises at least one thermoplastic polymer [polymer (T), herein after]. | 04-28-2016 |
Suresh R. Sriram, Alpharetta, GA US
Patent application number | Description | Published |
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20140031481 | Polyamide compositions and article manufactured therefrom - Polyamide composition very well suited for the manufacture of LED devices comprising: (a) at least a polyamide comprising recurring units derived from at least one C6 and/or at least one C10 diamine and from at least one dicarboxylic acid of the formula HO—C(═O)—R—C(═O)—OH wherein R is a cycloaliphatic moiety; (b) at least a reinforcing filler, and (c) at least a white pigment selected from a group consisting of TiO | 01-30-2014 |
20140127440 | Mobile electronic devices made of amorphous polyamides - The present invention relates to components of mobile electronic devices made of an amorphous polyamide composition characterized by excellent mechanical properties, low moisture uptake, low distortion and very good aesthetical properties. The amorphous polyamide has recurring units derived from the polycondensation of a mixture of monomers of aromatic dicarboxylic acid(s), cycloaliphatic diamine(s) with 6 to 12 carbon atoms, and a third monomer with 10 to 16 carbon atoms. | 05-08-2014 |
20140186624 | Polyarylene ether ketones - The invention pertains to novel aromatic ether ketone polymers derived from bio-based feed-stocks, comprising recurring units of formula (R | 07-03-2014 |
Thottam Sriram, Redmond, WA US
Patent application number | Description | Published |
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20120143894 | Acquisition of Item Counts from Hosted Web Services - A web Application Programming Interface (API) server receives a statistics request from a client. The statistics request is a request to invoke an item counting method defined in an API provided by the web API server. The statistics request specifies a keyword string and multiple target data repositories. As a response to the statistics request, the web API server sends a statistics response to the client. The statistics response specifies an item count that indicates how many relevant items are in the target data repositories. Each of the relevant items is associated with at least one keyword in the keyword string. | 06-07-2012 |
20120317082 | QUERY-BASED INFORMATION HOLD - Systems and methods for implementing a query-based hold on electronic items hosted by a communication device and/or system. Electronic items from a plurality of user-specific folders are purged and copied to a discovery hold folder. The purged items, along with all existing items, contained within the discovery hold folder are evaluated against the query-based hold criteria. Items that fail to meet the query-based hold criteria are permanently deleted from the discovery hold folder. Items that meet the query-based hold criteria are maintained within discovery hold folder. | 12-13-2012 |
Thottam R. Sriram, Redmond, WA US
Patent application number | Description | Published |
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20080320460 | Fulfillment of requirement for versioned resource - A requirement for a versioned resource is fulfilled, particularly in light of compatibility constraints of the requirement. Versions of the versioned resource are associated with compatibility information, such as a feature version and a service version, for example. In fulfilling the requirement, compatibility logic may be applied to identify versions that are compatible with the requirement, and selection logic may be applied to select a preferred version from the compatible versions. | 12-25-2008 |
20120303653 | CROSS-PLATFORM DATA PRESERVATION - Embodiments are directed to determining in an email data store which of a plurality of email mailboxes is searchable, to searching multiple mailboxes in an email data store and to preserving data items that are placed on hold. In an embodiment, a web service receives a request to determine which among many different email mailboxes is available for searching. The web service allows multiple different programs to search the email data store. The web service sends a query to the email data store to determine which email mailboxes are available for searching. The web service also returns a list of those email mailboxes which are searchable in the data store. The searchable mailboxes have an appropriate, specified version and permissions indicating that the mailbox is searchable. | 11-29-2012 |
20130117218 | CROSS-STORE ELECTRONIC DISCOVERY - An electronic discovery (eDiscovery) application is used in managing an electronic discovery process across different electronic data sources using a central interface. The eDiscovery application assists in managing: authentication support for the different data sources; accessing the different data sources; placing holds on content across the different data sources; searching and filtering content across the different data sources; gathering data across the data sources; and the like. The eDiscovery application may be configured as an application on premise, a cloud based service and/or a combination of a cloud based service and an application. | 05-09-2013 |
20130124552 | LOCATING RELEVANT CONTENT ITEMS ACROSS MULTIPLE DISPARATE CONTENT SOURCES - Technologies are described herein for locating relevant content items across multiple disparate content sources. Query parameters are received from a user interface for defining a query for searching a number of content sources located on multiple, disparate content servers. A native search is executed on each of the content servers based on the received query parameters, and query statistics and other data regarding content items in the content sources matching the query parameters are received. The query statistics are aggregated across the content servers and presented in the user interface. The presentation of the query statistics may be broken out by each content source, by each query phrase segmented from the query, and the like. In addition, a preview of a number of content items matching the query parameters is presented based on the data received. | 05-16-2013 |
20130124562 | EXPORT OF CONTENT ITEMS FROM MULTIPLE, DISPARATE CONTENT SOURCES - Technologies are described herein for exporting content items from multiple disparate content sources to a single repository. Query parameters are received for locating content items hosted by one or more content servers of different types for export. Native search queries are generated for each content server from the query parameters and are executed on each content server. An export manifest listing the content items for export is built from query results received from the content servers. Each content item listed in the export manifest is then retrieved from the corresponding content server and stored in a single export repository. | 05-16-2013 |
20130297576 | EFFICIENT IN-PLACE PRESERVATION OF CONTENT ACROSS CONTENT SOURCES - Technologies are described herein for providing efficient in-place preservation of content in multiple, disparate content sources without disrupting end-users' access to the content or content sources. A preservation request comprising a specification of a content source and a filter specification is received and the content source is marked as “on hold.” If a content item in the content source is modified or deleted, a copy of the current version of the content item is placed in a preservation storage area. A trim job may be run periodically that removes content items from the preservation storage area that do not match the filter specification. | 11-07-2013 |
20150186440 | IN-PLACE RECIPIENT PRESERVATION - One or more indirect recipients of a communication item within a communication management application (CMA) may be preserved in-place. Indirect recipients include individual recipients within a distribution list (DL) via TO, carbon copy (CC), and/or blind carbon copy (BCC) fields of the communication item. At time of submission of the communication item, the CMA in conjunction with an assistant service may expand the DL to retrieve a list of individual recipients from the DL. The DL may be expanded by querying a directory server associated with the CMA. The DL expansion list may be saved to the communication item at the CMA by updating one or more properties of the communication item according to the expansion list. The DL expansion list may then be referenced for indexing so that a discovery search may be performed in-place at the CMA if and when the search is needed. | 07-02-2015 |
Tillasthanam V. Sriram, Carmel, IN US
Patent application number | Description | Published |
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20150049515 | RESONANT CONVERTER AND METHOD OF OPERATING THE SAME - A LLC resonant converter that includes a plurality of electronic switches arranged to form a bridge and a controller. The bridge is operable to an operating mode that includes a full-bridge mode and a half-bridge mode. The controller is configured to adjust an operating frequency used to operate the bridge based on a comparison of a set-point value to an output value of an output voltage generated by converter, change the operating mode to the half-bridge mode if the operating mode is the full-bridge mode, an output current of the converter is less than a minimum current threshold, and the operating frequency is greater than a maximum frequency threshold, and change the operating mode to the full bridge mode if the operating mode is the half-bridge mode, and the operating frequency is less than a minimum frequency threshold. | 02-19-2015 |
Tirunelveli Sriram, Acton, MA US
Patent application number | Description | Published |
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20140273345 | METHODS FOR BONDING A HERMETIC MODULE TO AN ELECTRODE ARRAY - A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material. | 09-18-2014 |
Tirunelveli S. Sriram, Acton, MA US
Patent application number | Description | Published |
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20130329373 | BIO-IMPLANTABLE HERMETIC INTEGRATED ULTRA HIGH DENSITY DEVICE - An implantable bio-compatible integrated circuit device and methods for manufacture thereof are disclosed herein. The device includes a substrate having a recess. An input/output device including at least one bio-compatible electrical contact is coupled to the substrate in the recess. A layer of hermetic bio-compatible, hermetic insulator material is deposited on a portion of the input/output device. An encapsulating layer of bio-compatible material encapsulates at least a portion of the implantable device, including the input/output device. At least one bio-compatible electrical contact of the input/output device is then exposed. The encapsulating layer and the layer of bio-compatible, hermetic insulator material form a hermetic seal around the at least one exposed bio-compatible electrical contact. | 12-12-2013 |
20140257434 | DISTRIBUTED NEURO-MODULATION SYSTEM WITH AUXILIARY STIMULATION-RECORDING CONTROL UNITS - Systems and methods for modulating a physiological process are provided to enable precise delivery of signals to a predetermined treatment site. The systems may comprise an implantable device and an electrical lead body. The electrical lead body may comprise a plurality of transducer contacts in close proximity to an end of the electrical lead body, and a control unit positioned within the lead body in close proximity to the plurality of transducer contacts. | 09-11-2014 |
20140257435 | DISTRIBUTED NEURO-MODULATION SYSTEM WITH AUXILIARY STIMULATION-RECORDING CONTROL UNITS - Systems and methods for modulating a physiological process are provided to enable precise delivery of signals to a predetermined treatment site. The systems may comprise an implantable device and an electrical lead body. The electrical lead body may comprise a plurality of transducer contacts in close proximity to an end of the electrical lead body, and a control unit positioned within the lead body in close proximity to the plurality of transducer contacts. | 09-11-2014 |
20160086824 | BIO-IMPLANTABLE HERMETIC INTEGRATED ULTRA HIGH DENSITY DEVICE - An implantable bio-compatible integrated circuit device and methods for manufacture thereof are disclosed herein. The device includes a substrate having a recess. An input/output device including at least one bio-compatible electrical contact is coupled to the substrate in the recess. A layer of hermetic bio-compatible, hermetic insulator material is deposited on a portion of the input/output device. An encapsulating layer of bio-compatible material encapsulates at least a portion of the implantable device, including the input/output device. At least one bio-compatible electrical contact of the input/output device is then exposed. The encapsulating layer and the layer of bio-compatible, hermetic insulator material form a hermetic seal around the at least one exposed bio-compatible electrical contact. | 03-24-2016 |
Tirunelveli Subramaniam Sriram, Acton, MA US
Patent application number | Description | Published |
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20100012841 | IMAGING APPARATUS AND METHODS - Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques. | 01-21-2010 |
20100019154 | IMAGING APPARATUS AND METHODS - Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described. | 01-28-2010 |
20120061567 | IMAGING APPARATUS AND METHODS - Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques. | 03-15-2012 |
T. V. Sriram, Carmel, IN US
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20110199060 | VOLTAGE AND CURRENT REGULATION METHOD FOR A TWO-STAGE DC-DC CONVERTER CIRCUIT - A control methodology for a two-stage PWM DC-DC conversion system, with transformer-isolation, in which the converter circuit input voltage is compared to a set voltage calibrated as a function of the desired output voltage and the maximum voltage conversion ratio provided by the second-stage converter. When the input voltage is above the set voltage, the second-stage converter is controlled to provide both output voltage regulation during normal operation and output current limiting during over-current conditions. However, when the input voltage is below the set voltage, the first-stage converter is controlled to provide output voltage regulation with minor output current limiting, and the second-stage converter is controlled to provide extended output current limiting independent of the input voltage. | 08-18-2011 |
Vidhya Sriram, Redmond, WA US
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20110307865 | USER INTERFACE INVENTORY - User interface elements are identified and cataloged into a user interface inventory database keyed on a global user interface element identifier. Information is collected for user interface elements activated in an executing application or applications. Scenario information is collected and is used to update the user interface inventory database. Scenario information includes information concerning user interface element usage, state changes, etc. in time. The described information can be collected over a period of time and from a number of different computer systems. The information can be analyzed to determine and quantify usage and testing of user interface elements. The analyzed information can be used to determine how thoroughly a user interface element has been tested, how often the user interface element works as expected, most commonly used user interface elements and other information. The collected information can be used to track, quantify and identify ownership of user interface elements. | 12-15-2011 |
Vidhya Sriram, Sammamish, WA US
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20140344729 | PRIMITIVE-BASED COMPOSITION - Primitive-based composition techniques are described. In one or more implementations, a global composition system may be configured to perform rendering for a plurality of applications. For example, the global composition system may be configured to expose one or more application programming interfaces (APIs) that are accessible to the applications. The APIs may then be used to cause a single composition engine to perform the rendering for the plurality of applications. Further, the composition engine may support the use of primitives, which include one or more rendering instructions and thus an element associated with a visual to be rendered may be something other than a bitmap. | 11-20-2014 |
Vidhya Sriram, Bellevue, WA US
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20100082733 | EXTENSIBLE REMOTE PROGRAMMATIC ACCESS TO USER INTERFACE - A remote automation system is described herein that allows application accessibility information to be used remotely and extended to allow custom UI elements to be automated. The remote automation system receives a request at a remote computer for automation data related to an application running on the remote computer. The remote automation system requests automation data from the application running on the remote computer and serializes the automation data for transmission to the client computer. The system transmits the serialized automation data to the client computer in response to the request. When the client computer receives the response, the system deserializes the automation data and provides the deserialized automation data to a local application on the client computer. Thus, the remote automation system allows users to view applications running on a remote system but run accessibility applications locally. | 04-01-2010 |