Patent application number | Description | Published |
20090019411 | Thermally Aware Design Modification - In a first variation, a thermally aware design automation suite integrates system-level thermal awareness into design of semiconductor chips, performing fine-grain thermal simulations of the chips based on thermal models and boundary conditions. The suite uses results of the simulations to modify thermally significant structures to achieve desired thermal variations across a chip, meet design assertions on selected portions of the chip, and verify overall performance and reliability of the chip over designated operating ranges and manufacturing variations. In a second variation, a discretization approach models chip temperature distributions using heuristics to adaptively grid space in three dimensions. Adaptive and locally variable grid spacing techniques are used to efficiently and accurately converge for steady state and/or transient temperature solutions. The modeling optionally reads a mesh initialization file specifying selected aspects and parameters associated with controlling use and behavior of the variable grid spacing techniques. | 01-15-2009 |
20090024347 | Thermal Simulation Using Adaptive 3D and Hierarchical Grid Mechanisms - A thermally aware design automation suite integrates system-level thermal awareness into design of semiconductor chips, performing fine-grain static and/or transient thermal simulations of the chips based on thermal models and boundary conditions. The thermal simulations are performed in accordance with one or more grids, with boundaries and/or resolutions being determined by adaptive and/or hierarchical multi-dimensional techniques. The adaptive grid techniques include material-boundary, rate-of-change, and convergence-information heuristics. For example, a finer grid is used in a region having higher temperature gradients compared to a region having lower temperature gradients. The hierarchical grid techniques are based on critical, intermediate, and boundary regions specified manually or automatically, each region having a respective grid resolution. For example, a critical region is analyzed according to a grid that is finer than a grid of an intermediate region, and resolution of a grid of a boundary region is adapted to boundary conditions. | 01-22-2009 |
Patent application number | Description | Published |
20150360226 | SINGLE CELL CAPTURE WITH POLYMER CAPTURE FILMS - The present invention provides methods, systems, assemblies, and articles for capturing single cells with a polymer capture film. In certain embodiments, the polymer capture films comprise a plurality of individual channels with top and bottom openings, where the channels are dimensioned such that a single cell is: i) is captured inside the channel, partially or substantially occluding the channel, when negative pressure is provided to the bottom opening; or ii) is captured by the top opening, but does not enter the channel, when negative pressure is provided to the bottom opening. In some embodiments, the channels of the polymer capture film align with the wells of a multi-well chip such that the cell, or the contents of the single cell, may be transferred to a corresponding well. | 12-17-2015 |
20160033378 | SINGLE CELL CAPTURE WITH POLYMER CAPTURE FILMS - The present invention provides methods, systems, assemblies, and articles for capturing single cells with a polymer capture film. In certain embodiments, the polymer capture films comprise a plurality of individual channels with top and bottom openings, where the channels are dimensioned such that a single cell is: i) is captured inside the channel, partially or substantially occluding the channel, when negative pressure is provided to the bottom opening; or ii) is captured by the top opening, but does not enter the channel, when negative pressure is provided to the bottom opening. In some embodiments, the channels of the polymer capture film align with the wells of a multi-well chip such that the cell, or the contents of the single cell, may be transferred to a corresponding well. | 02-04-2016 |
20160045884 | SINGLE CELL CAPTURE WITH CAPTURE CHIPS - The present invention provides methods, systems, assemblies, and articles for capturing single cells with a capture chip. In certain embodiments, the capture chip comprises a substrate comprising a plurality of cell-sized dimples or wells that each allow a single cell to be captured from a cell suspension. In some embodiments, the dimples or wells of the capture chip align with the holes or wells of a multi-well through-hole chip, and/or a multi-well chip, such that the cell, or the contents of the single cell, may be transferred to a corresponding well of the multi-well chip. In particular embodiments, the bottom of each dimple or well of the capture chip has a positive electrical charge sufficient to attract cells from a cell suspension flowing over the dimples or wells. | 02-18-2016 |
Patent application number | Description | Published |
20100327413 | HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN - A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O | 12-30-2010 |
20110021031 | HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS - A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component. | 01-27-2011 |
20110132874 | SMALL PLASMA CHAMBER SYSTEMS AND METHODS - A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed. | 06-09-2011 |
20140151333 | Small Plasma Chamber Systems and Methods - A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed. | 06-05-2014 |
20140287593 | HIGH THROUGHPUT MULTI-LAYER STACK DEPOSITION - Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas inlet in a lid assembly of the chamber. The second precursor line is coupled to a second diverter, which is also coupled to the gas inlet. The first diverter is also coupled to a first divert line, and the second diverter is coupled to a second divert line. Each of the first and second divert lines is coupled to a divert exhaust system. A chamber exhaust system is coupled to the chamber. The diverters are typically located close to the lid assembly. | 09-25-2014 |
20150187563 | PHOTO-ASSISTED DEPOSITION OF FLOWABLE FILMS - A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation. | 07-02-2015 |
20150194317 | DEVELOPMENT OF HIGH ETCH SELECTIVE HARDMASK MATERIAL BY ION IMPLANTATION INTO AMORPHOUS CARBON FILMS - Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices. | 07-09-2015 |
20150206739 | DEPOSITION OF HETEROATOM-DOPED CARBON FILMS - Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices. | 07-23-2015 |
20150206757 | DIELECTRIC-METAL STACK FOR 3D FLASH MEMORY APPLICATION - A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers. | 07-23-2015 |
20150228463 | CLEANING PROCESS FOR CLEANING AMORPHOUS CARBON DEPOSITION RESIDUALS USING LOW RF BIAS FREQUENCY APPLICATIONS - Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber. | 08-13-2015 |
20160027614 | DEPOSITION OF METAL DOPED AMORPHOUS CARBON FILM - Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity. | 01-28-2016 |
20160049323 | METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM - Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×10 | 02-18-2016 |
Patent application number | Description | Published |
20090177266 | METHODS, SYSTEMS AND DEVICES FOR CARDIAC VALVE REPAIR - Disclosed are methods, systems, and devices for the endovascular repair of cardiac valves, particularly the atrioventricular valves which inhibit back flow of blood from a heart ventricle during contraction. The procedures described herein can be performed with interventional tools, guides and supporting catheters and other equipment introduced to the heart chambers from the patient's arterial or venous vasculature remote from the heart. The interventional tools and other equipment may be introduced percutaneously or may be introduced via a surgical cut down, and then advanced from the remote access site through the vasculature until they reach the heart. | 07-09-2009 |
20100298929 | METHODS, SYSTEMS AND DEVICES FOR CARDIAC VALVE REPAIR - Disclosed are methods, systems, and devices for the endovascular repair of cardiac valves, particularly the atrioventricular valves which inhibit back flow of blood from a heart ventricle during contraction. The procedures described herein can be performed with interventional tools, guides and supporting catheters and other equipment introduced to the heart chambers from the patient's arterial or venous vasculature remote from the heart. The interventional tools and other equipment may be introduced percutaneously or may be introduced via a surgical cut down, and then advanced from the remote access site through the vasculature until they reach the heart. | 11-25-2010 |
Patent application number | Description | Published |
20090151752 | METHODS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
20090151757 | APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
20090156452 | MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
20120132234 | APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - A cleaning system for removing contaminants on a surface of a patterned substrate for defining integrated circuit devices is provided. The system includes a substrate carrier for supporting edges of the patterned substrate, and a cleaning head positioned over the patterned substrate. The cleaning head includes a plurality of dispensing holes to dispense a cleaning material on the surface the patterned substrate for defining integrated circuit devices, wherein the cleaning material includes polymers of a polymeric compound. The cleaning head is coupled to a storage of the cleaning material, which is coupled to the cleaning material preparation system. A support structure holds the cleaning head in proximity to the surface of the patterned substrate. | 05-31-2012 |
Patent application number | Description | Published |
20090050140 | PORE STRUCTURES FOR REDUCED PRESSURE AEROSOLIZATION - A nozzle comprising a thin, flexible substantially planar polymeric film having a plurality of pores with structures allowing for generation of an aerosol at reduced extrusion pressure is disclosed. The pores can comprise at least two sections, or steps, in which the thickness of the membrane is reduced in stepwise fashion, or the pores can be tapered. Nozzles formed comprising pores having such structures permit aerosol generation at lower extrusion pressures, thereby allowing for decreased weight of aerosolization devices, increased efficiency, increased portability and increased battery life. The pore structures also allow for the use of thicker, more easily processed polymeric films in manufacturing while having a thinner, more efficient aerosolization area. The use of decreased extrusion pressures also results in increased uniformity in aerosol generation and improved reliability of other components. | 02-26-2009 |
20110253132 | Pore Structures for Reduced Pressure Aerosolization - A nozzle comprising a thin, flexible substantially planar polymeric film having a plurality of pores with structures allowing for generation of an aerosol at reduced extrusion pressure is disclosed. The pores can comprise at least two sections, or steps, in which the thickness of the membrane is reduced in stepwise fashion, or the pores can be tapered. Nozzles formed comprising pores having such structures permit aerosol generation at lower extrusion pressures, thereby allowing for decreased weight of aerosolization devices, increased efficiency, increased portability and increased battery life. The pore structures also allow for the use of thicker, more easily processed polymeric films in manufacturing while having a thinner, more efficient aerosolization area. The use of decreased extrusion pressures also results in increased uniformity in aerosol generation and improved reliability of other components. | 10-20-2011 |
20140174439 | Pore Structures for Reduced Pressure Aerosolization - A nozzle comprising a thin, flexible substantially planar polymeric film having a plurality of pores with structures allowing for generation of an aerosol at reduced extrusion pressure is disclosed. The pores can comprise at least two sections, or steps, in which the thickness of the membrane is reduced in stepwise fashion, or the pores can be tapered. Nozzles formed comprising pores having such structures permit aerosol generation at lower extrusion pressures, thereby allowing for decreased weight of aerosolization devices, increased efficiency, increased portability and increased battery life. The pore structures also allow for the use of thicker, more easily processed polymeric films in manufacturing while having a thinner, more efficient aerosolization area. The use of decreased extrusion pressures also results in increased uniformity in aerosol generation and improved reliability of other components. | 06-26-2014 |
Patent application number | Description | Published |
20100146074 | NETWORK OPTIMIZATION USING DISTRIBUTED VIRTUAL RESOURCES - In one example embodiment, an apparatus may include a first virtual machine provided on a first local device of a plurality of local devices, wherein a portion of resources of the first local device are allocated to the first virtual machine. A virtualization software switch may be provided on the first local device, configured to forward or redirect at least some traffic from the first local device to a WAN (Wide Area Network) optimization virtual appliance, the WAN optimization virtual appliance including at least the first virtual machine, a second virtual machine on a second local device of the plurality of local devices, and a distributed WAN optimization application running at least on the first and second virtual machines. | 06-10-2010 |
20100274890 | METHODS AND APPARATUS TO GET FEEDBACK INFORMATION IN VIRTUAL ENVIRONMENT FOR SERVER LOAD BALANCING - Methods and apparatus for providing availability information of a virtual machine to a load balancer are disclosed. The availability information of the virtual machine may be normalized information from performance metrics of the virtual machine and performance metrics of the physical machine on which the virtual machine operates. The normalized availability of a virtual machine is provided by a feedback agent executing on the virtual machine. Alternatively, the normalized availability of a virtual machine is provided by a feedback agent executing on a hypervisor executing multiple virtual machines on a common set of physical computing hardware. | 10-28-2010 |
20110235645 | VIRTUAL SERVICE DOMAINS - In one embodiment, layer-2 (L2) ports of a network device may each be assigned to a particular virtual service domain (VSD). One or more virtual service engines (VSEs) may also be assigned in a particular order to each VSD, where each VSE is configured to apply a particular service to traffic traversing the VSE between ingress and egress service ports. Interconnecting the L2 ports and the ingress and egress service ports is an illustrative virtual Ethernet module (VEM), which directs traffic it receives according to rules as follows: a) into a destination VSD via the one or more correspondingly assigned VSEs in the particular order; b) out of a current VSD via the one or more correspondingly assigned VSEs in a reverse order from the particular order; or c) within a current VSD without redirection through a VSE. | 09-29-2011 |
20110255538 | METHOD OF IDENTIFYING DESTINATION IN A VIRTUAL ENVIRONMENT - Techniques are described for identifying destinations in a virtual network by defining virtual entities such as a port profile as the destination for network policies, such as redirect or span to be a logical set of ports (i.e., ports belonging to a port-profile or a port group) where the members of the set of ports may be added/removed dynamically without requiring any changes to the network policy. Further, a network administrator (or other user) may predefine the destinations for a network policy even before some or all of the destinations are active on a given virtualized system. In such cases, the network policies may go into effect when the required entities become available. | 10-20-2011 |
20120127857 | Dynamic Queuing and Pinning to Improve Quality of Service on Uplinks in a Virtualized Environment - Techniques are provided for improve quality of service on uplinks in a virtualized environment. At a server apparatus having a plurality of physical links configured to communicate traffic over a network to or from the server apparatus, forming an uplink group comprising a plurality of physical links. A first class of service is defined that allocates a first share of available bandwidth on the uplink group, and a second class of service is defined that allocates a second share of available bandwidth on the uplink group. The bandwidth for the first class of service is allocated across the plurality of physical links of the uplink group, and the bandwidth for the second class of service is allocated across the plurality of physical links of the uplink group. Traffic rates are monitored on each of the plurality of physical links to determine if a physical link is congested indicating that a bandwidth deficit exists for a class of service. In response to determining that one of the plurality of physical links is congested, bandwidth is reallocated for a class of service to reduce the bandwidth deficit for a corresponding class of service. | 05-24-2012 |
20120294316 | VIRTUAL SERVICE DOMAINS - In one embodiment, ports of a network device are assigned to virtual service domains (VSDs). The ports are coupled to a virtual Ethernet module (VEM) of the network device. Each VSD is associated with one or more virtual service engines (VSEs) in a particular order. Each VSE is configured to apply a particular service to traffic traversing the VSE. Traffic received at a virtual Ethernet module (VEM) of the network device that is destined for a particular VSD, and is received on a port that has not been assigned to the particular VSD, is forwarded to the particular VSD via the one or more VSEs associated with the particular VSD such that the traffic traverses the one or more VSEs in the particular order. | 11-22-2012 |
20130170490 | SYSTEM AND METHOD FOR DISCOVERING MULTIPOINT ENDPOINTS IN A NETWORK ENVIRONMENT - An example method is provided and may include multicasting a discovery packet in an overlay network, which includes a Layer 2 scheme over a Layer 3 network; and identifying endpoints based on their respective responses to the discovery packet, where the endpoints are coupled across a multicast backbone. In more specific embodiments, the method may include identifying disconnected endpoints in the overlay network based on a lack of responses from the disconnected endpoints. | 07-04-2013 |
20130188494 | DYNAMIC LOAD BALANCING WITHOUT PACKET REORDERING - Flows of packets are dynamically mapped to resource queues. Flows of packets are received at a network device to be routed from the network device in a network. Each flow comprises packets to be sent from a source to a connection. Data is stored for a queue allocation table that maintains a plurality of buckets to which received packets for a flow are assigned and indicating which of a plurality of resource queues are allocated for respective buckets. For each packet in a flow, a hash function is computed from values in a header of the packet and the packet is assigned to one of the plurality of buckets based on the computed hash function. One of a plurality of resource queues is allocated for each bucket to which packets are assigned based on the computed hash function. | 07-25-2013 |
20130219384 | SYSTEM AND METHOD FOR VERIFYING LAYER 2 CONNECTIVITY IN A VIRTUAL ENVIRONMENT - A method is provided in one example embodiment that includes detecting a migration of a virtual machine from an origination host to a destination host and comparing a first root bridge to a second root bridge to verify data link layer continuity of the virtual network on the destination host. The virtual machine is connected to a virtual network, the first root bridge is associated with the virtual network on the origination host and the second root bridge is associated with the virtual network on the destination host. The method may further include blocking the migration if the first root bridge and the second root bridge are not the same. | 08-22-2013 |
20140092744 | Dynamic Queuing and Pinning to Improve Quality of Service on Uplinks in a Virtualized Environment - At a network element having a plurality of physical links configured to communicate traffic over a network to or from the network element, an uplink group is formed comprising the plurality of physical links, wherein the plurality of physical links comprise a first physical link and a second physical link A plurality of classes of service are defined comprising a first class of service and a second class of service, wherein the first class of service and second class of service have bandwidth allocations on the first physical link. Traffic congestion is detected on the first physical link that exceeds a predetermined threshold for the first class of service. Traffic associated with one or more virtual machines associated with the first class of service on the first physical link is re-associated to the second physical link until the traffic congestion falls below the predetermined threshold. | 04-03-2014 |