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| 20090019411 | Thermally Aware Design Modification - In a first variation, a thermally aware design automation suite integrates system-level thermal awareness into design of semiconductor chips, performing fine-grain thermal simulations of the chips based on thermal models and boundary conditions. The suite uses results of the simulations to modify thermally significant structures to achieve desired thermal variations across a chip, meet design assertions on selected portions of the chip, and verify overall performance and reliability of the chip over designated operating ranges and manufacturing variations. In a second variation, a discretization approach models chip temperature distributions using heuristics to adaptively grid space in three dimensions. Adaptive and locally variable grid spacing techniques are used to efficiently and accurately converge for steady state and/or transient temperature solutions. The modeling optionally reads a mesh initialization file specifying selected aspects and parameters associated with controlling use and behavior of the variable grid spacing techniques. | 01-15-2009 |
| 20090024347 | Thermal Simulation Using Adaptive 3D and Hierarchical Grid Mechanisms - A thermally aware design automation suite integrates system-level thermal awareness into design of semiconductor chips, performing fine-grain static and/or transient thermal simulations of the chips based on thermal models and boundary conditions. The thermal simulations are performed in accordance with one or more grids, with boundaries and/or resolutions being determined by adaptive and/or hierarchical multi-dimensional techniques. The adaptive grid techniques include material-boundary, rate-of-change, and convergence-information heuristics. For example, a finer grid is used in a region having higher temperature gradients compared to a region having lower temperature gradients. The hierarchical grid techniques are based on critical, intermediate, and boundary regions specified manually or automatically, each region having a respective grid resolution. For example, a critical region is analyzed according to a grid that is finer than a grid of an intermediate region, and resolution of a grid of a boundary region is adapted to boundary conditions. | 01-22-2009 |
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| 20100327413 | HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN - A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O | 12-30-2010 |
| 20110021031 | HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS - A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component. | 01-27-2011 |
| 20110132874 | SMALL PLASMA CHAMBER SYSTEMS AND METHODS - A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed. | 06-09-2011 |
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| 20090177266 | METHODS, SYSTEMS AND DEVICES FOR CARDIAC VALVE REPAIR - Disclosed are methods, systems, and devices for the endovascular repair of cardiac valves, particularly the atrioventricular valves which inhibit back flow of blood from a heart ventricle during contraction. The procedures described herein can be performed with interventional tools, guides and supporting catheters and other equipment introduced to the heart chambers from the patient's arterial or venous vasculature remote from the heart. The interventional tools and other equipment may be introduced percutaneously or may be introduced via a surgical cut down, and then advanced from the remote access site through the vasculature until they reach the heart. | 07-09-2009 |
| 20100298929 | METHODS, SYSTEMS AND DEVICES FOR CARDIAC VALVE REPAIR - Disclosed are methods, systems, and devices for the endovascular repair of cardiac valves, particularly the atrioventricular valves which inhibit back flow of blood from a heart ventricle during contraction. The procedures described herein can be performed with interventional tools, guides and supporting catheters and other equipment introduced to the heart chambers from the patient's arterial or venous vasculature remote from the heart. The interventional tools and other equipment may be introduced percutaneously or may be introduced via a surgical cut down, and then advanced from the remote access site through the vasculature until they reach the heart. | 11-25-2010 |
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| 20090151752 | METHODS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
| 20090151757 | APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
| 20090156452 | MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA - The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. | 06-18-2009 |
