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| 20090025641 | METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF ON-AXIS SiC AND SIMILAR SEMICONDUCTOR MATERIALS - A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of “on-axis” SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl | 01-29-2009 |
| 20110031572 | HIGH POWER DENSITY BETAVOLTAIC BATTERY - To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given. | 02-10-2011 |
| 20110086456 | Betavoltaic battery with a shallow junction and a method for making same - This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N | 04-14-2011 |
| 20110241144 | Nuclear Batteries - We introduce a new technology for Manufactureable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. The small (submicron) thickness of the active volume of both the isotope layer and the semiconductor device is due to the short absorption length of beta electrons. The absorption length determines the self absorption of the beta particles in the radioisotope layer as well as the range, or travel distance, of the betas in the semiconductor converter which is typically a semiconductor device comprising at least one PN junction. Various devices and methods to solve the current industry problems and limitations are presented here. | 10-06-2011 |
| 20110283933 | METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF SiC AND RELATED OR SIMILAR MATERIAL, BY CHEMICAL VAPOR DEPOSITION, USING PRECURSORS IN MODIFIED COLD-WALL REACTOR - An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl | 11-24-2011 |
| 20110287567 | Betavoltaic battery with a shallow junction and a method for making same - This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N | 11-24-2011 |
| 20110298071 | HIGH POWER DENSITY BETAVOLTAIC BATTERY - To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given. | 12-08-2011 |
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| 20080203399 | POLARIZATION DOPED TRANSISTOR CHANNELS IN SIC HETEROPOLYTYPES - Heteropolytype SiC heterojunctions display an abrupt change in polarization leading to 2 dimensional electron or hole gases at the lattice matched interface, depending on the direction of polarization. These channels carry a large amount of electric current which can be modulated with a gate electrode, giving rise to transistor operation in the lateral geometry without the need for n or p type doping. Furthermore, some of these structures display high turn-on voltages which may have applications in terahertz sources and exotic diodes in the transverse geometry. | 08-28-2008 |
| 20080274030 | Group III nitride compositions - The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were performed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders. | 11-06-2008 |
| 20110079791 | BETAVOLTAIC CELL - High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC. | 04-07-2011 |
| 20110283821 | FLEXIBLE SUBSTRATE SENSOR SYSTEM FOR ENVIRONMENTAL AND INFRASTRUCTURE MONITORING - A sensor system utilizing flexible electronics for on-line real-time high-sensitivity sampling, monitoring, and analysis of a parameter or analyte of interest in a fluid or in or on a solid is provided. The flexible substrate sensor system comprises a plurality of sensors, a flexible substrate, a network, and a connection between the sensors and the network, wherein the network reads out or collects information from the sensors. The network can be onboard, connected by via a physical connection to the sensors and the flexible substrate, or external to the sensors and flexible substrate, connected via a telemetric or wireless connection to the sensors. The flexible substrate sensor system can be deployed in systems that conduct or distribute fluids or solids, such as distribution systems (municipal water systems, oil or gas pipeline systems), industrial systems (production facilities, piping, and storage systems), and large structures (dams, bridges, walkways, buildings). | 11-24-2011 |
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| 20090254437 | Dynamic Content Selection and Delivery - A system for selecting and delivering content items includes a primary system and a secondary system. Each system includes a server and a datastore of content items that is accessible by the server. The primary system receives a request for a content item, selects an appropriate content item from the primary datastore, and sends a query containing information regarding the selected content item to the secondary system. The secondary system receives the query, searches the secondary datastore, and determines whether to deliver the content item contained in the query, another content item, a default content item, or a pass-back to the requester. | 10-08-2009 |
| 20100114716 | NETWORK PROXY BIDDING SYSTEM - Methods, systems and computer program products for submitting a network proxy bid and replacing the network proxy bid with an actual bid associated with advertisement placement are described. In some implementations, instead of submitting a static bid, an advertiser can submit a network proxy bid to an advertising exchange. A network proxy bid can indicate to the advertising exchange that the advertiser wishes to receive a call back from the advertising exchange when an impression matching targeting criteria specified by the advertiser becomes available. The advertiser then can calculate and submit an actual static bid to replace the network proxy bid in response to the call back. | 05-06-2010 |
| 20100223141 | Differential Buying Channels for Online Advertising - Systems and methods for adjusting bids based upon differential buying channels. A first buying channel and a second buying channel for an advertisement can be compared. If a revenue share from the first buying channel and second buying channel differ, the bid for the advertisement on the buying channel with the higher revenue share can be discounted based upon the difference. A winning bid can be identified using the discounted bid and the bid associated with the lower of the two revenue shares. | 09-02-2010 |
| 20100306048 | Matching Content Providers and Interested Content Users - Methods, systems, and apparatuses to match content providers and interested content users are described. Input indicating an accessing of a network location by a user is received along with the user's identifier. The identifier is obfuscated and transmitted to a content provider configured to provide content to the user at the network location. A re-direct identifier is transmitted to the user instructing the user to directly contact the content provider. When the user contacts the content provider, the user transmits a provider-specific identifier by which the content provider identifies the user and the obfuscated user identifier. The content provider updates a database of obfuscated user identifiers and provider-specific user identifiers based on the received identifiers. Thus, the content provider is enabled to identify interested users based on obfuscated and provider-specific user identifiers. | 12-02-2010 |
