Patent application number | Description | Published |
20090230628 | FACE SEAL FOR GAS TURBINE ENGINE - A face seal for a gas turbine engine comprises a seal body that has a contact face to engage a rotating surface. The contact face is defined as an area extending radially between an inner diameter of the seal body and an outer diameter of the seal body at one seal end providing a radial width. The radial width is between greater than 0.15 inch (3.81 mm). | 09-17-2009 |
20130069313 | TURBOMACHINE SECONDARY SEAL ASSEMBLY - An exemplary turbomachine secondary ring seal assembly includes a base portion that extends circumferentially about an axis and a protrusion extending from the base portion toward the axis. The protrusion has a sealing surface that contacts a support to limit movement of a fluid from a first axial side of the base portion to a second opposite axial side of the base portion. The sealing surface faces the axis. The sealing surface may also face in a radial direction. | 03-21-2013 |
20150240660 | BUFFER AIRFLOW TO BEARING COMPARTMENT - A seal support and duct assembly of a gas turbine engine includes a seal support housing disposed about a central axis, a duct housing attached to the seal support housing, the duct housing and the seal support housing defining the seal support and duct assembly, an outer annular cavity, an inlet that supplies the outer annular cavity with cooling buffer air, an inner annular cavity disposed radially inward of the outer annular cavity, a first plurality of outlets that provide the cooling buffer air from the outer annular cavity to the inner annular cavity, and a second plurality of outlets that provide the cooling buffer air from the inner annular cavity to an area surrounding a bearing compartment. | 08-27-2015 |
20150337674 | SEAL ASSEMBLY FOR ARRANGING BETWEEN A STATOR AND A ROTOR - A seal assembly is provided that extends along an axial centerline. The seal assembly includes a seal support, a seal housing, a plurality of torque pins and a plurality of stopper collars. The seal housing includes a plurality of slots arranged circumferentially around the centerline. The slots extend axially through the seal housing, and one or more of the slots has a lateral slot width. The torque pins are connected to the seal support. Each of the torque pins respectively extends axially through a uniquely associated one of the slots to a distal pin end. Each of the stopper collars is uniquely associated with and connected to a respective one of the torque pins at the pin end. One or more of the stopper collars has a lateral collar width that is less than the slot width. | 11-26-2015 |
Patent application number | Description | Published |
20100064964 | METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INSULATING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR CONTROLLING THEREOF - There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member | 03-18-2010 |
20100116195 | METHOD FOR GROWING SILICON SINGLE CRYSTAL - The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method. | 05-13-2010 |
20100128253 | METHOD FOR DETECTING THE DIAMETER OF A SINGLE CRYSTAL AND SINGLE CRYSTAL PULLING APPARATUS - The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality. | 05-27-2010 |
20110214605 | SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided. | 09-08-2011 |
20130125810 | APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL - The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part. | 05-23-2013 |
20130276693 | SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD - A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident. | 10-24-2013 |
20140103492 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage. | 04-17-2014 |