Patent application number | Description | Published |
20090310063 | METHOD OF DRIVING A LIGHT SOURCE, BACKLIGHT ASSEMBLY FOR PERFORMING THE METHOD AND DISPLAY APPARATUS HAVING THE BACKLIGHT ASSEMBLY - In a method of driving a light source, initial driving signals are applied to a plurality of color light sources in response to a power-on signal from an external device. During a predetermined set time period, light amount control signals for controlling an amount of light generated by the color light sources are generated using a predetermined function with reference signals and first sensing signals generating by sensing the amount of the light generated by the color light sources driven by the initial driving signals. Then, compensated driving signals, which are compensated based on the light amount control signal, are applied to the color light sources to compensate the amount of the light generated by the color light sources. | 12-17-2009 |
20100007670 | METHOD OF DRIVING LIGHT SOURCES, LIGHT SOURCE DRIVING DEVICE FOR PERFORMING THE METHOD AND DISPLAY APPARATUS HAVING THE CIRCUIT - A light source driving device includes a resolution analyzing part, a dimming block adjusting part, a local dimming part and a light source unit. The resolution analyzing part obtains an image resolution. The dimming block adjusting part adjusts the size or the number of dimming blocks generating light in a local dimming method in response to the resolution. The local dimming part generates a local dimming signal for individually driving the dimming blocks in response to the image data and the size or the number of dimming blocks. The light source unit is driven by the local dimming signal to generate light. The size or the number of the dimming blocks is adjusted to be optimized for the obtained image resolution, so that regardless of the image resolution, a local dimming signal corresponding to the size and the number of the dimming blocks may be generated. | 01-14-2010 |
20100007682 | LIQUID CRYSTAL DISPLAY AND METHOD OF DRIVING THE SAME - A liquid crystal display (“LCD”) includes; a liquid crystal panel including a plurality of display blocks, a light-emitting unit which provides light to the liquid crystal panel and includes a plurality of light-emitting blocks corresponding to the display blocks, respectively; and a timing controller which provides an optical data signal for controlling the light-emitting blocks, wherein the optical data signal includes a plurality of scan signals and a plurality of dimming signals which are alternatingly arranged, and each of the dimming signals controls a luminance of a corresponding one of the light-emitting blocks. | 01-14-2010 |
20100309194 | METHOD OF DIMMING A LIGHT SOURCE AND DISPLAY APPARATUS FOR PERFORMING THE METHOD - A method of dimming a light source module including a light guide plate, a first light emitting module including first to k-th light source blocks, wherein the first light emitting module is disposed on a first edge of the light guide plate, and a second light emitting module including first to m-th light source blocks, the second light emitting module being disposed on a second edge of the light guide plate, the second edge disposed opposite the first , the method including; generating a first group of driving signals and a second group of driving signals based on an image signal and driving the first to k-th light source blocks using the first group of the driving signals during a first period in a reference period and driving the first to m-th light source blocks using the second group of driving signals during a second period in the reference period. | 12-09-2010 |
20110037685 | DISPLAY APPARATUS INCLUDING SUB-LIGHT SOURCE GROUPS - A display apparatus includes; a display panel which displays an image using a light, wherein the display panel is divided into a plurality of display areas corresponding to the image, a plurality of main-light source groups which each have a plurality of light sources, wherein the main-light source groups are arranged respectively corresponding to the display areas to provide the light thereto, a power source circuit is connected to each main-light source groups to provide a corresponding driving power to each of the main-light source groups, and a plurality of sub-light source groups, each of which is arranged between two adjacent main-light source groups and wherein each sub-light group receives the driving power applied to each of the two main-light source groups adjacent thereto to provide a light corresponding to an average brightness of the two adjacent main-light source groups to a border area between two adjacent display areas. | 02-17-2011 |
Patent application number | Description | Published |
20090181529 | Method of forming a contact hole and method of manufacturing a semiconductor device having the same - In a method of forming a contact hole and a method of manufacturing a semiconductor device having the same, a first insulation interlayer is formed on a substrate. A dummy pattern is formed on the first insulation interlayer. A second insulation interlayer is formed to cover the dummy pattern. A photoresist pattern is formed on the second insulation interlayer. The photoresist pattern has an exposed portion. The dummy pattern under the photoresist pattern is arranged to cross over the exposed portion of the photoresist pattern. The first and second insulation interlayers are etched using the photoresist pattern and the dummy pattern as an etching mask, to form a plurality of contact holes on both sides of the dummy pattern. Accordingly, the contact holes may be formed to have a smaller width. | 07-16-2009 |
20100237394 | Semiconductor memory device - A semiconductor memory device includes unit active regions, word lines extending in a first direction over the unit active region, bit lines extending on the word lines in a second direction substantially perpendicularly to the first direction, first pad contacts in contact with central portions of the unit active regions, the first pad contacts being arranged between the word lines, direct contacts electrically connected between the first pad contacts and the bit lines, second pad contacts in contact with edge portions of the unit active regions, the second pad contacts being arranged between the word lines and between the bit lines, buried contacts electrically connected to the second pad contacts, and capacitors electrically connected to the buried contacts. | 09-23-2010 |
Patent application number | Description | Published |
20150016303 | DEVICE AND METHOD FOR ACTIVE SCANNING - A device and method for active scanning are disclosed. The active scanning method in a wireless LAN can comprise the steps of: allowing an AP to receive a probe request frame containing an the AP identifier; determining whether the AP is a target AP or a non-target AP on the basis of the AP identifier; and performing back-off for the transmission of a probe response frame from a second interval after a first interval is terminated in a minimum channel interval when the AP is a non-target AP. Therefore, the present invention can prevent probe response frames from flooding a STA in a short period of time by distributing intervals in which probe response frames are received to the STA. In addition, the time used by the STA to perform active scanning can be reduced. | 01-15-2015 |
20150040195 | METHOD AND APPARATUS FOR ASSOCIATING STATION (STA) WITH ACCESS POINT (AP) - The present invention relates to a method and apparatus for associating a station (STA) with an access point (AP). The method for associating a first AP with an STA in a wireless LAN includes the steps of: a first AP receiving an association request frame from the STA; the first AP requesting authentication information on the STA from a second AP with which the STA was previously associated; the first AP receiving authentication information on the STA from the second AP, wherein the first and second AP's are linked by a distribution system, the association request frame includes identification information on the second AP, and the authentication information on the STA can include at least one of a paired main key (PMK) and a recertification main session key (rMSK). Accordingly, fast association between the STA and the AP can be achieved by a simplified authentication procedure without repeating a full authentication procedure. | 02-05-2015 |
20150078358 | METHOD AND APPARATUS FOR SETTING UP HIGH-SPEED LINK IN WLAN SYSTEM - The present invention relates to a wireless communication system, and more specifically, disclosed are a method and an apparatus for setting up a high-speed link in a WLAN system. A method for a station (STA) setting up the high-speed link in a wireless communication system, according to one embodiment of the present invention, comprises the steps of: transmitting to an access point (AP) a request frame including a generic advertisement service (GAS) configuration change query; and receiving from the AP a response frame including response information with respect to the GAS configuration change query, wherein the response information may include GAS step skipping information when AS information saved in the STA matches the GAS information saved in the AP. | 03-19-2015 |
Patent application number | Description | Published |
20100250753 | PARTIAL SESSION TRANSFER METHOD AND USER EQUIPMENT FOR THE SAME - A session transfer procedure not for all ongoing multimedia components but for some media components in a wireless communication system and an apparatus for the same are provided. In a partial session transfer procedure, a user equipment establishing a first session to transmit a plurality of media components transmits a partial attach request message to a mobility control entity of a network core. The partial attach request message may be an attach request message whose attach type is set to ‘partial handover’. Upon receiving an attach accept message containing information regarding a gateway of the network core from the mobility control entity, a second session is established with the gateway by using the gateway information. After the establishing of the second session, the user equipment does not release the previously established first session. The user equipment transmits partial session transfer information indicating a media component to be transmitted using each of the first session and the second session among the plurality of media components to a counterpart user equipment, and thereafter exchanges multimedia data with the counterpart user equipment through both of the first session and the second session on the basis of the partial session transfer information. | 09-30-2010 |
20150282014 | PARTIAL SESSION TRANSFER METHOD AND USER EQUIPMENT FOR THE SAME - A method of establishing an extended IP flow in a wireless communication system can include establishing, at a user equipment (UE), an initial IP flow with a packet data network gateway (PDN-GW) included in an evolved packet core (EPC) through a first type access network and further establishing, at the UE, the extended IP flow with the PDN-GW through a second type access network different from the first type access network, while maintaining the initial IP flow with the PDN-GW through the first type access network, wherein a binding update is transmitted to the PDN-GW, wherein a binding acknowledgement is transmitted by the PDN-GW in response to the binding update if a single IP address is allocated to identify both the initial IP flow and the extended IP flow, and wherein the single IP address is included in the binding acknowledgement. | 10-01-2015 |
Patent application number | Description | Published |
20150243676 | DISPLAY DEVICE - A display device includes a first substrate including a display area and a non-display area, the display area including a pixel including a first electrode, a light emission layer, and a second electrode; a sealing member facing the first substrate; and a first conducting member in the display area, the first conducting member being coupled to the first electrode, where the sealing member includes: a first conductive layer coupled to the first conducting member; an insulating layer on the first conductive layer; and a second conductive layer on the insulating layer, the second conductive layer being coupled to the second electrode. | 08-27-2015 |
20150287353 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - An organic light emitting display device is configured to divide one frame into a plurality of sub-frames and to express gradations based on a sum of light emitting times of the plurality of sub-frames, the organic light emitting display device includes: a driving unit configured to provide at least two on-voltages having different voltage values; and a display unit comprising a plurality of organic light emitting elements configured to be driven by the on-voltages. | 10-08-2015 |
20150310808 | DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - A display device includes a display panel including a plurality of pixels, a control unit configured to scale image data provided from the outside based on an image load factor and to output the scaled image data, and a data driver configured to supply data signals corresponding to the scaled image data to a plurality of data lines connected to the pixels, wherein the control unit includes a load factor calculating unit configured to calculate a load factor of the image data; and a data scaler configured to scale a gray level of the image data based on a scaling ratio corresponding to a load factor. | 10-29-2015 |
20150310827 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device which divides each frame into a plurality of sub-frames and represents gray levels based on the sum of the lengths of one or more sub-frames during which light is emitted, the organic light-emitting display device comprising a display unit including a plurality of pixels arranged in a matrix, a scan driver configured to provide a scan signal to the display unit during each sub-frame period and a precharge voltage unit configured to provide a precharge voltage to the pixels, wherein the pixels are divided into a first pixel column block including a pixel receiving the scan signal before the other pixels and a second pixel column block next to the first pixel column block in a direction of the application of the scan signal and the precharge voltage is selectively provided to pixels included in the first pixel column block. | 10-29-2015 |
20150356925 | DISPLAY PANEL MODULE, ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD OF DRIVING THE SAME - A display panel module, organic light-emitting diode (OLED) display and method of driving the same are disclosed. In one aspect, the module includes a display panel divided into a first portion and a second portion and a plurality of scan and data lines divided into groups arranged in the first and second potions. The module further includes a first scan driver configured to sequentially apply scan signals to each of the first and second scan line groups. The first scan driver is further configured to substantially simultaneously apply the scan signals to corresponding scan lines of the first and second scan line groups. The module also includes a first data driver configured to output first data voltages to the first data line group and a second data driver configured to output second data voltages to the second data line group with the same timing as the first data driver. | 12-10-2015 |
20160027381 | ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF DRIVING THE SAME - An organic light-emitting diode (OLED) display and a method of driving the same are disclosed. In one aspect, the method includes displaying an image on a display panel based at least in part on a first power voltage provided through a first power line and a second power voltage having a first voltage level provided through a second power line. The display panel is configured to receive the first and second power voltages from a power supply unit. The method also includes providing the second power voltage having a second voltage level higher than the first voltage level to the display panel through the second power line, detecting a second power line current flowing through the second power line when the second power voltage has the second voltage level, and turning off the power supply unit when the second power line current is detected. | 01-28-2016 |
20160078814 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a display panel having pixels, a red color high power voltage line, a green color high power voltage line, a blue color high power voltage line, and a low power voltage line, a driving current calculator for calculating an amount of a red color driving current of image data, an amount of a green color driving current of the image data, and an amount of a blue color driving current of the image data, and a power supply for generating a red color high power voltage, a green color high power voltage, and a blue color high power voltage for which overshoot times are controlled to be within a falling time during which the low power voltage is changed from a first level to a second level or to be within a rising time during which the low power voltage is changed from the second level to the first level. | 03-17-2016 |
20160086542 | DISPLAY DEVICE COMPENSATING VARIATION OF POWER SUPPLY VOLTAGE - A display panel includes input power supply line coupled to a power supply at one or more edge portions of the display panel, and an output power supply line coupled to the input power supply line at a predetermined portion of the display panel. The input power supply line receives the power supply voltage, and the output power supply line receives the power supply voltage from the input power supply line. The power supply is coupled to the output power supply line at the one or more edge portions of the display panel, and receives the power supply voltage from the output power supply line to adjust a voltage level of the power supply voltage based on the power supply voltage from the output power supply line. The predetermined portion is at a location different from an edge of the display panel. | 03-24-2016 |
Patent application number | Description | Published |
20120269183 | METHOD FOR REPORTING CHANNEL INFORMATION BASED ON LINK ADAPTATION IN WIRELESS LOCAL AREA NETWORK AND THE APPARATUS FOR THE SAME - A method for reporting channel information in a wireless local area network system is provided. The method includes receiving a data block for requesting a modulation and coding scheme (MCS) feedback from a requesting station, the data block including a data field and a stream indicator indicating a number of at least one spatial stream in the data field; determining, the MCS feedback based on the data block; and, transmitting the MCS feedback to the requesting station, the MCS feedback including a recommended MCS and a recommended stream indicator indicating a number of at least one recommended spatial stream. The number of the at least one recommended spatial stream in the MCS feedback is equal or less than the number of the at least one spatial stream in the data block. | 10-25-2012 |
20130188630 | METHOD OF LINK ADAPTATION IN WIRELESS LOCAL AREA NETWORK AND APPARATUS FOR THE SAME - A method of link adaptation in a wireless local area network is provided. The method includes requesting, by a requester, modulation and coding scheme (MCS) feedback to a plurality of responders, by transmitting a MCS request (MRQ) indicator, and, receiving, by the requester, feedback frames from each of the plurality of responders, wherein each of the feedback frame comprises MCS feedback (MFB) information. | 07-25-2013 |
20130235836 | METHOD AND APPARATUS FOR DETERMINING MODULATION AND CODING SCHEME FEEDBACK IN WIRELESS LOCAL AREA NETWORK SYSTEM - The present invention relates to a method of determining a Modulation and Coding Scheme (MCS) feedback in a Wireless Local Area Network (WLAN) system, including an MCS FeedBack (MFB) responder receiving a first frame, including a request message requesting to send the MFB, from an MFB requester and the MFB responder sending the MFB, including a recommended MCS value, to the MFB requester. The recommended MCS value is derived with reference to at least one of unsolicit type information indicative of a type of the MFB, transmit type information indicative of a transmission type of data, coding type information indicative of a coding scheme applied to the data, a group ID indicative of a group of target stations (STAs) to which the data will be transmitted, and MFB bandwidth information indicative of a bandwidth of a channel. | 09-12-2013 |
20140293916 | METHOD FOR REPORTING CHANNEL INFORMATION BASED ON LINK ADAPTATION IN WIRELESS LOCAL AREA NETWORK AND THE APPARATUS FOR THE SAME - A method and device for link adaptation in a wireless local area network system, are discussed. The method may include receiving, by a responding station, from a requesting station, a requesting Physical layer Protocol Data Unit (PPDU) for requesting a modulation and coding scheme (MCS) feedback via a plurality of spatial streams, the requesting PPDU including an MCS request (MRQ) field that is set to one to request the responding station to provide the MCS feedback; and transmitting, by the responding station, to the requesting station, the MCS feedback including a recommended MCS field and a recommended stream field. The recommended MCS field indicates a recommended MCS, the recommended stream field indicates a number of at least one recommended spatial stream, and the number of the at least one recommended spatial stream is less than a number of the plurality of spatial streams used for the requesting PPDU. | 10-02-2014 |
20160127076 | METHOD FOR REPORTING CHANNEL INFORMATION BASED ON LINK ADAPTATION IN WIRELESS LOCAL AREA NETWORK AND THE APPARATUS FOR THE SAME - A method and a device for reporting a modulation and coding scheme (MCS) feedback in a wireless local area network are provided. A responding station receives, from a requesting station, a requesting Physical layer Protocol Data Unit (PPDU) for requesting a MCS feedback via a plurality of spatial streams. A recommended MCS is estimated under an assumption that the requesting station will transmit at least one first spatial stream among the plurality of spatial streams used for the requesting PPDU, The responding station transmits, to the requesting station, the MCS feedback including a recommended MCS field indicating the recommended MCS and a recommended stream field indicating a number of at least one recommended spatial stream. A number of the at least one first spatial stream used for estimating the recommended MCS is equal to the number of the at least one recommended spatial stream. | 05-05-2016 |
Patent application number | Description | Published |
20120231245 | ADHESIVE FILM AND TOUCH PANEL - The present invention relates to an adhesive film and to a touch panel. According to the present invention, even when the adhesive film is applied to a touch panel, for example, a capacitive touch panel, and directly attached to a conductive layer, the adhesive film effectively prevents the resistance of the conductive layer from being raised and exhibits good heat resistance. In addition, according to the present invention, an adhesive film having superior durability, optical characteristics, cuttability, workability, wettability and resistance to warping is provided. | 09-13-2012 |
20130236672 | ADHESIVE COMPOSITION FOR TOUCH PANEL, ADHESIVE FILM, AND TOUCH PANEL - The present invention relates to an adhesive composition for a touch panel, an adhesive film, and a touch panel. The adhesive composition for the touch panel of the present invention is applied to the touch panel, for example, to an electrostatic capacitance-type touch panel, for hiding the pattern of a conductive layer even when being coupled to the conductive layer formed with the pattern. Also, the adhesive composition of the present invention can prevent yellowing and whitening. | 09-12-2013 |
20130236673 | ADHESIVE COMPOSITION FOR TOUCH PANEL, ADHESIVE FILM, AND TOUCH PANEL - The present invention relates to an adhesive composition for a touch panel, and adhesive film, and to a touch panel. When the adhesive composition of the present invention is applied to the touch panel, for example, to an electrostatic capacitance-type touch panel, the present invention has superior durability under high-temperature and high-humidity conditions and superior wettability and adhesiveness to various objects to be adhered, and can provide the adhesive composition and the adhesive film having excellent durability to chemicals, such as resistance to sebum. | 09-12-2013 |
20130236674 | ADHESIVE COMPOSITION FOR TOUCH PANEL, ADHESIVE FILM, AND TOUCH PANEL - The present invention relates to an adhesive composition for a touch panel, an adhesive film, and a touch panel. When coupled to the touch panel, for example, to a conductive layer and to a hard coating surface of an electrostatic capacitive touch panel, the present invention has superior durability, such as resistance to peeling, detaching, or air bubbles under high-temperature and high-humidity conditions, and can provide an adhesive composition or adhesive agent also having superior workability, wettability, and adhesion to various objects to be adhered. | 09-12-2013 |
20150044458 | SEMI-HARDENED PRESSURE-SENSITIVE ADHESIVE FILM - Disclosed is a semi-hardened pressure sensitive adhesive film to be used in the semi-hardened state and having excellent printing step absorption properties. The adhesive film according to the present invention contains a radial polymer composition and a cationic polymer composition, and the radial polymer composition is primarily cross-linked to maintain the semi-hardened state. When applied onto a substrate through a printing step, the present invention has excellent step absorption properties and adhesion properties and excellent durability even under high-temperature and high-humidity conditions. | 02-12-2015 |
20150125675 | OPTICAL ADHESIVE FILM HAVING EXCELLENT PEELING EFFECT AT HIGH TEMPERATURES - The present invention relates to an optical adhesive film which has excellent adhesive strength at room temperature and has improved efficiency in a rework process since peel strength is low at high temperatures. When attaching a touchscreen panel and an LCD by using the adhesive film of the present invention and separating the touchscreen panel and the LCD at high temperatures, the touchscreen panel and the LCD can be separated from each other without causing damage thereto. Additionally, the optical film of the present invention comprises two adhesive layers, wherein peeling occurs at the first adhesive layer having an adhesive composition such that a peeling surface can be controlled according to the convenience of a user. | 05-07-2015 |
20150140249 | ADHESIVE COMPOSITION HAVING HIGH FLEXIBILITY - The present invention relates to an adhesive composition comprising: an alkyl acrylic acid ester monomer having an alkyl carbon number of 2 to 14; an acrylic acid ester monomer containing a hydroxyl group; and a copolymer obtained by copolymerizing an acrylic acid ester monomer. The present invention also provides the adhesive composition and an adhesive film using the same, a touch panel, and an electronic device. The adhesive composition of the present invention has characteristics of high flexibility and good cutting properties, durability, transparency, etc. | 05-21-2015 |
Patent application number | Description | Published |
20110175141 | SEMICONDUCTOR DEVICES INCLUDING MOS TRANSISTORS HAVING AN OPTIMIZED CHANNEL REGION AND METHODS OF FABRICATING THE SAME - A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern. | 07-21-2011 |
20120129310 | METHODS OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELECTRIC LAYER AND SEMICONDUCTOR DEVICES FABRICATED THEREBY - A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer. | 05-24-2012 |
20120161211 | SEMICONDUCTOR DEVICE - A semiconductor device includes an isolation pattern disposed on a substrate, the isolation pattern defining an active part, a gate pattern crossing the active part on the substrate, the gate pattern including a dielectric pattern and a first conductive pattern, and the dielectric pattern being between the active part and the first conductive pattern, a pair of doping regions in the active part adjacent to side walls of the gate pattern, the gate pattern being between the pair of doping regions, and a diffusion barrier element injection region disposed in an upper region of the active part. | 06-28-2012 |
20130299916 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A semiconductor device includes a substrate including a first region and a second region, a first gate dielectric layer, a first lower gate electrode, and a first upper gate electrode sequentially stacked on the first region, a second gate dielectric layer, a second lower gate electrode, and a second upper gate electrode sequentially stacked on the second region, a first spacer disposed on a sidewall of the first upper gate electrode, a second spacer disposed on a sidewall of the second upper gate electrode, a third spacer covering the first spacer on the sidewall of the first upper gate electrode, and a fourth spacer covering the second spacer on the sidewall of the second upper gate electrode. At least one of a first sidewall of the first lower gate electrode and a second sidewall of the first lower gate electrode is in contact with the third spacer. | 11-14-2013 |
20140175569 | SEMICONDUCTOR DEVICE HAVING A HIGH-K GATE DIELECTRIC LAYER - A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer. | 06-26-2014 |
20140273382 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES - A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer. | 09-18-2014 |
Patent application number | Description | Published |
20110306171 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH DIFFERENTIALLY NITRIDED GATE INSULATORS - An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively. | 12-15-2011 |
20110306184 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness. | 12-15-2011 |
20120032332 | Semiconductor Devices Having A Diffusion Barrier Layer and Methods of Manufacturing the Same - Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region. | 02-09-2012 |
20120070975 | Methods of Forming Gate Structure and Methods of Manufacturing Semiconductor Device Including the Same - A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented. | 03-22-2012 |
20120083111 | Methods of Manufacturing a Semiconductor Device - There is provided a method of manufacturing a semiconductor device. In the method, a gate insulation layer including a high-k dielectric material is formed on a substrate. An etch stop layer is formed on the gate insulation layer. A metal layer is formed on the etch stop layer. A hard mask including amorphous silicon is formed on the metal layer. The metal layer is patterned using the hard mask as an etching mask to form a metal layer pattern. | 04-05-2012 |
20140035050 | SEMICONDUCTOR DEVICES HAVING A DIFFUSION BARRIER LAYER AND METHODS OF MANUFACTURING THE SAME - Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region. | 02-06-2014 |
20140070325 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film. | 03-13-2014 |
20140141599 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness. | 05-22-2014 |
20160049478 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device comprises forming a gate insulation layer on a substrate including a first region and a second region, forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate, removing the capping layer from the first region and the second region, forming a second gate conductive layer on the first region and the second region, nitriding the second gate conductive layer, and forming a third gate conductive layer on the second region. | 02-18-2016 |
20160064225 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al). | 03-03-2016 |