Patent application number | Description | Published |
20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
20090146265 | ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY - A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH | 06-11-2009 |
20090304951 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than | 12-10-2009 |
20100187502 | ENCLOSED NANOTUBE STRUCTURE AND METHOD FOR FORMING - A semiconductor device and associated method for forming. The semiconductor device comprises an electrically conductive nanotube formed over a first electrically conductive member such that a first gap exists between a bottom side the electrically conductive nanotube and a top side of the first electrically conductive member. A second insulating layer is formed over the electrically conductive nanotube. A second gap exists between a top side of the electrically conductive nanotube and a first portion of the second insulating layer. A first via opening and a second via opening each extend through the second insulating layer and into the second gap. | 07-29-2010 |
20110101489 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME - A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH | 05-05-2011 |
20110162874 | SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES - An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap. | 07-07-2011 |
20120175023 | SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES - An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. | 07-12-2012 |